SG11201809762PA - Siloxane-containing solar cell metallization pastes - Google Patents
Siloxane-containing solar cell metallization pastesInfo
- Publication number
- SG11201809762PA SG11201809762PA SG11201809762PA SG11201809762PA SG11201809762PA SG 11201809762P A SG11201809762P A SG 11201809762PA SG 11201809762P A SG11201809762P A SG 11201809762PA SG 11201809762P A SG11201809762P A SG 11201809762PA SG 11201809762P A SG11201809762P A SG 11201809762PA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- solar cell
- zhejiang
- pct
- metallization pastes
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 title abstract 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title 1
- -1 siloxanes Chemical class 0.000 abstract 2
- 241000218195 Lauraceae Species 0.000 abstract 1
- 235000017858 Laurus nobilis Nutrition 0.000 abstract 1
- 235000005212 Terminalia tomentosa Nutrition 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System comprising porous silicon as part of the active layer(s)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
80- 70- 60- .; o_ 50- 40- 5 30- 20- 10- 100 200 200 Shear Rate(s -1 ) FIG. 1 300 400 PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) ~~ll~~~~~~~~ 011101010VIIIOH olo HE om olo mo mil ono ow (10) International Publication Number WO 2018/112743 Al WIPO I PCT (12) INTERNATIONAL APPLICATION (19) World Intellectual Property Organization International Bureau (43) International Publication Date 28 June 2018 (28.06.2018) (51) International Patent Classification: H01B 1/22 (2006.01) H01B 13/00 (2006.01) H01B 3/00 (2006.01) H01L 31/18 (2006.01) H01L 31/0224 (2006.01) H01B 1/02 (2006.01) (21) International Application Number: PCT/CN2016/111036 (22) International Filing Date: 20 December 2016 (20.12.2016) (25) Filing Language: English (26) Publication Language: English (71) Applicant: ZHEJIANG KAIYING NEW MATERIALS CO., LTD. [CN/CN]; Room 1728, Technology Building, No. 128 Shuanglian Rd., Economic Development Zone, Haining, Zhejiang 314400 (CN). (72) Inventors: HILALI, Mohamed M.; 511 Joree Lane, San Ramon, CA 94582 (US). ZHANG, Wei; No. 129 Shuan- glian Rd., Haining, Zhejiang 314400 (CN). LI, Zhiyong; 1193 Laurels Drive, Los Altos, CA 94023 (US). = (74) Agent: INSIGHT INTELLECTUAL PROPERTY LIMITED; 19 A, Tower A, InDo Building, No. 48A Zhichun Road, Haidian District, Beijing 100098 (CN). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: SILOXANE-CONTAINING SOLAR CELL METALLIZATION PASTES O (57) : Frontside metallization pastes for solar cell electrodes contain siloxanes. Metallization pastes containing siloxanes can be used to fabricate fine line, high aspect ratio, solar cell gridlines. 11 N
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2016/111036 WO2018112743A1 (en) | 2016-12-20 | 2016-12-20 | Siloxane-containing solar cell metallization pastes |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201809762PA true SG11201809762PA (en) | 2018-12-28 |
Family
ID=62561976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201809762PA SG11201809762PA (en) | 2016-12-20 | 2016-12-20 | Siloxane-containing solar cell metallization pastes |
Country Status (6)
Country | Link |
---|---|
US (2) | US10079318B2 (en) |
CN (1) | CN108885917B (en) |
MY (1) | MY189222A (en) |
SG (1) | SG11201809762PA (en) |
TW (1) | TWI659050B (en) |
WO (1) | WO2018112743A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102007864B1 (en) * | 2016-10-31 | 2019-08-07 | 엘에스니꼬동제련 주식회사 | Electrode Paste For Solar Cell's Electrode And Solar Cell using the same |
SG11201809794SA (en) | 2016-12-20 | 2018-12-28 | Zhejiang Kaiying New Materials Co Ltd | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions |
MY189222A (en) * | 2016-12-20 | 2022-01-31 | Zhejiang Kaiying New Mat Co Ltd | Siloxane-containing solar cell metallization pastes |
KR102021483B1 (en) * | 2017-03-16 | 2019-09-16 | 삼성에스디아이 주식회사 | Composition for forming electrode, electrode manufactured using the same and solar cell |
KR20200078172A (en) * | 2018-12-21 | 2020-07-01 | 삼성에스디아이 주식회사 | Composition for forming solar cell electrode and solar cell electrode prepared using the same |
US10749045B1 (en) | 2019-05-23 | 2020-08-18 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell side surface interconnects |
US10622502B1 (en) | 2019-05-23 | 2020-04-14 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell edge interconnects |
CN115477896A (en) * | 2021-06-15 | 2022-12-16 | 天合光能股份有限公司 | Coating liquid and preparation method and application thereof |
Family Cites Families (41)
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KR20020060926A (en) | 2001-11-16 | 2002-07-19 | (주)켐트론 | Thermal Conductive Paste For Die Bonding In Semiconductor Packaging Process |
KR100996235B1 (en) * | 2004-06-01 | 2010-11-25 | 주식회사 동진쎄미켐 | Pb free Ag paste composition for PDP address electrode |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
GB2459274A (en) | 2008-04-15 | 2009-10-21 | Renewable Energy Corp Asa | Wafer based solar panels |
US8076777B2 (en) | 2008-06-26 | 2011-12-13 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
WO2010113708A1 (en) * | 2009-03-30 | 2010-10-07 | 三菱マテリアル株式会社 | Method of producing solar cell module |
US9947809B2 (en) | 2009-11-11 | 2018-04-17 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
US8895843B2 (en) | 2010-05-04 | 2014-11-25 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
KR101181190B1 (en) * | 2010-07-30 | 2012-09-18 | 엘지이노텍 주식회사 | Solar cell and paste compisition for rear electrode of the same |
CN101948639B (en) | 2010-08-31 | 2012-11-21 | 长沙族兴新材料股份有限公司 | Method for preparing high floating value floating aluminum silver paste |
US20110315217A1 (en) | 2010-10-05 | 2011-12-29 | Applied Materials, Inc. | Cu paste metallization for silicon solar cells |
CA2829269A1 (en) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminium oxide-based metallisation barrier |
US20140124713A1 (en) * | 2011-03-29 | 2014-05-08 | Diptarka Majumdar | High-aspect ratio screen printable thick film paste compositions containing wax thixotropes |
CN102290120B (en) | 2011-06-08 | 2013-10-23 | 常州斯威克光伏新材料有限公司 | Silver paste for solar cell and preparation method thereof |
US8952245B2 (en) * | 2012-01-23 | 2015-02-10 | Heraeus Precious Metals North America Conshohocken Llc | Conductive thick film paste for solar cell contacts |
CN102592708B (en) * | 2012-02-13 | 2014-01-15 | 江苏瑞德新能源科技有限公司 | Aluminum conductor slurry for silicon solar energy battery |
KR101377555B1 (en) | 2012-03-14 | 2014-03-24 | 에스에스씨피 주식회사 | A glass frit, paste composition comprising the same and silicon solar cell using the paste composition |
KR102025529B1 (en) * | 2012-10-15 | 2019-09-27 | 다우 글로벌 테크놀로지스 엘엘씨 | Conductive composition |
US9899545B2 (en) | 2013-03-27 | 2018-02-20 | Cheil Industries, Inc. | Composition for forming solar cell electrode and electrode produced from same |
EP2787541B1 (en) | 2013-04-03 | 2022-08-31 | LG Electronics, Inc. | Solar cell |
KR20140135881A (en) | 2013-05-16 | 2014-11-27 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
CN104240793A (en) * | 2013-06-08 | 2014-12-24 | 北京中科纳通电子技术有限公司 | Nanometer conductive silver paste and preparing method thereof |
KR101648253B1 (en) | 2013-09-13 | 2016-08-12 | 제일모직주식회사 | Composition for forming solar cell and electrode prepared using the same |
JP2015058595A (en) * | 2013-09-17 | 2015-03-30 | 富士フイルム株式会社 | Composite film and sunlight reflecting film mirror |
KR101935272B1 (en) * | 2013-10-31 | 2019-01-04 | 쇼와 덴코 가부시키가이샤 | Electrically conductive composition for thin film printing, and method for forming thin film conductive pattern |
US20150129030A1 (en) | 2013-11-11 | 2015-05-14 | Solexel, Inc. | Dielectric-passivated metal insulator photovoltaic solar cells |
KR101627204B1 (en) | 2013-11-28 | 2016-06-03 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
EP2913311B1 (en) | 2014-02-26 | 2018-08-08 | Heraeus Precious Metals North America Conshohocken LLC | A glass comprising tungsten and lead in a solar cell paste |
US9209323B2 (en) | 2014-05-05 | 2015-12-08 | E I Du Pont De Nemours And Company | Conductive paste used for solar cell electrodes and method of manufacturing the solar cell electrodes |
CN104036842B (en) | 2014-05-12 | 2016-11-09 | 铜陵市超远精密电子科技有限公司 | A kind of leadless environment-friendly circuit board conductive silver slurry and preparation method thereof |
US20150333197A1 (en) | 2014-05-13 | 2015-11-19 | E I Du Pont De Nemours And Company | Method of manufacturing a solar cell electrode |
JP6355240B2 (en) * | 2014-05-19 | 2018-07-11 | Dowaエレクトロニクス株式会社 | Silver fine particle dispersion |
EP3202859B1 (en) * | 2014-10-02 | 2022-05-25 | Daicel Corporation | Silver particle coating composition |
CN104916346A (en) * | 2015-01-05 | 2015-09-16 | 深圳市思迈科新材料有限公司 | Low-temperature curing photosensitive conductive silver slurry composition |
CN104599741A (en) | 2015-01-30 | 2015-05-06 | 江苏欧耐尔新型材料有限公司 | Positive silver electrode slurry for silicon solar cell with high sheet resistance |
JP6236156B2 (en) * | 2015-06-01 | 2017-11-22 | 株式会社ノリタケカンパニーリミテド | Conductive composition and electrode forming method |
CN106158068A (en) * | 2016-07-05 | 2016-11-23 | 湖南省国银新材料有限公司 | conductive silver paste and preparation method thereof |
CN109074895B (en) | 2016-08-16 | 2022-05-27 | 浙江凯盈新材料有限公司 | Thick film paste for front side metallization in silicon solar cells |
CN106297956A (en) * | 2016-11-10 | 2017-01-04 | 北京市合众创能光电技术有限公司 | A kind of crystal silicon solar energy battery positive silver paste and preparation method thereof |
MY189222A (en) * | 2016-12-20 | 2022-01-31 | Zhejiang Kaiying New Mat Co Ltd | Siloxane-containing solar cell metallization pastes |
-
2016
- 2016-12-20 MY MYPI2018001849A patent/MY189222A/en unknown
- 2016-12-20 WO PCT/CN2016/111036 patent/WO2018112743A1/en active Application Filing
- 2016-12-20 SG SG11201809762PA patent/SG11201809762PA/en unknown
- 2016-12-20 CN CN201680046719.6A patent/CN108885917B/en active Active
-
2017
- 2017-12-20 TW TW106144901A patent/TWI659050B/en active
- 2017-12-20 US US15/849,344 patent/US10079318B2/en active Active
-
2018
- 2018-08-13 US US16/102,088 patent/US10256354B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10079318B2 (en) | 2018-09-18 |
US20180351011A1 (en) | 2018-12-06 |
US10256354B2 (en) | 2019-04-09 |
CN108885917B (en) | 2020-06-02 |
TW201823316A (en) | 2018-07-01 |
CN108885917A (en) | 2018-11-23 |
WO2018112743A1 (en) | 2018-06-28 |
MY189222A (en) | 2022-01-31 |
TWI659050B (en) | 2019-05-11 |
US20180175220A1 (en) | 2018-06-21 |
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