SG11201806132TA - Optical structure and method of forming the same - Google Patents
Optical structure and method of forming the sameInfo
- Publication number
- SG11201806132TA SG11201806132TA SG11201806132TA SG11201806132TA SG11201806132TA SG 11201806132T A SG11201806132T A SG 11201806132TA SG 11201806132T A SG11201806132T A SG 11201806132TA SG 11201806132T A SG11201806132T A SG 11201806132TA SG 11201806132T A SG11201806132T A SG 11201806132TA
- Authority
- SG
- Singapore
- Prior art keywords
- nanyang
- singapore
- international
- avenue
- optical structure
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- 239000012792 core layer Substances 0.000 abstract 5
- 239000000543 intermediate Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12119—Bend
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Adornments (AREA)
- Prostheses (AREA)
Abstract
WO 17 / 15 1055 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/151055 Al 8 September 2017 (08.09.2017) WIPO I PCT 11111111111111011101111111111101011111011101111111101011111111111111111111111110111111 FIG. 1B W core 106 (51) International Patent Classification: GO2B 6/00 (2006.01) H0JL 21/02 (2006.01) H01L 31/0232 (2014.01) (21) International Application Number: PCT/SG2017/050060 (22) International Filing Date: 10 February 2017 (10.02.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 10201601522Q 29 February 2016 (29.02.2016) SG (71) Applicants: NANYANG TECHNOLOGICAL UNI- VERSITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 (SG). MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (US). (72) Inventors: TAN, Chuan Seng; c/o Nanyang Technologic- al University, 50 Nanyang Avenue, Singapore 639798 (SG). LI, Wei; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (SG). ANANTHA, P; c/o Nanyang Technological University, 50 Nanyang Av- enue, Singapore 639798 (SG). LEE, Kwang Hong; c/o Singapore-MIT Alliance for Research and Technology, 1 Create Way, #10-01 Create Tower, Singapore 138602 (SG). BAO, Shuyu; c/o Nanyang Technological Univer- sity, 50 Nanyang Avenue, Singapore 639798 (SG). ZHANG, Lin; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O Box 1088, Rochor Post Office, Rochor Road, Singa- pore 911833 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. [Continued on next page] (54) Title: OPTICAL STRUCTURE AND METHOD OF FORMING THE SAME (57) : Various embodiments may provide an optical structure. The optical structure may in- clude a substrate. The optical structure may also include a core layer configured to carry optical light. The core layer may include germanium. The 100 optical structure may further include an intermedi- ate layer separating the substrate and the core lay- er so that the substrate is isolated from the core layer. The intermediate layer may include one or more materials selected from a group consisting of III-V materials, dielectric materials, and chalco - 104 genide materials. A width of the core layer may be smaller than a width of the intermediate layer. A refractive index of the core layer may be more than 4. A refractive index of the intermediate layer may be smaller than 3.6. 102 Wintermediate WO 2017/151055 Al MIDEDIMOMOIDEIR010131130101MHIMMOIMIE (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3))
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201601522Q | 2016-02-29 | ||
PCT/SG2017/050060 WO2017151055A1 (en) | 2016-02-29 | 2017-02-10 | Optical structure and method of forming the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201806132TA true SG11201806132TA (en) | 2018-09-27 |
Family
ID=59743101
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201806132TA SG11201806132TA (en) | 2016-02-29 | 2017-02-10 | Optical structure and method of forming the same |
SG10201912982VA SG10201912982VA (en) | 2016-02-29 | 2017-02-10 | Optical structure and method of forming the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201912982VA SG10201912982VA (en) | 2016-02-29 | 2017-02-10 | Optical structure and method of forming the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US10598853B2 (en) |
SG (2) | SG11201806132TA (en) |
WO (1) | WO2017151055A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11150494B2 (en) | 2015-03-05 | 2021-10-19 | Rockley Photonics Limited | Waveguide modulator structures |
US11101256B2 (en) | 2016-11-23 | 2021-08-24 | Rockley Photonics Limited | Optical modulators |
GB2572876B (en) * | 2016-11-23 | 2020-08-12 | Rockley Photonics Ltd | Electro-optically active device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7453129B2 (en) * | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
US6897498B2 (en) | 2003-03-31 | 2005-05-24 | Sioptical, Inc. | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
US7496260B2 (en) * | 2007-03-27 | 2009-02-24 | Imra America, Inc. | Ultra high numerical aperture optical fibers |
KR101344346B1 (en) * | 2007-07-25 | 2013-12-24 | 삼성전자주식회사 | Phase change memory devices and methods of forming the same |
KR101750742B1 (en) * | 2011-10-14 | 2017-06-28 | 삼성전자주식회사 | Photodetector structure |
WO2013146406A1 (en) * | 2012-03-30 | 2013-10-03 | 日本電気株式会社 | Waveguide-coupled msm-type photodiode |
US9171929B2 (en) * | 2012-04-25 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained structure of semiconductor device and method of making the strained structure |
US9285540B2 (en) * | 2012-09-21 | 2016-03-15 | The Regents Of The University Of California | Integrated dielectric waveguide and semiconductor layer and method therefor |
US9046650B2 (en) | 2013-03-12 | 2015-06-02 | The Massachusetts Institute Of Technology | Methods and apparatus for mid-infrared sensing |
US9612398B2 (en) * | 2014-10-17 | 2017-04-04 | The United States Of America, As Represented By The Secretary Of The Navy | Ultra-broadband photonic integrated circuit platform and ultra-broadband photonic integrated circuit |
BR102015027316B1 (en) * | 2014-10-31 | 2021-07-27 | Nichia Corporation | LIGHT EMITTING DEVICE AND FRONT LAMP SYSTEM FOR ADAPTIVE DRIVE HEADLIGHT |
US9916999B2 (en) * | 2015-06-04 | 2018-03-13 | Micron Technology, Inc. | Methods of fabricating a semiconductor package structure including at least one redistribution layer |
-
2017
- 2017-02-10 SG SG11201806132TA patent/SG11201806132TA/en unknown
- 2017-02-10 SG SG10201912982VA patent/SG10201912982VA/en unknown
- 2017-02-10 WO PCT/SG2017/050060 patent/WO2017151055A1/en active Application Filing
- 2017-02-10 US US16/079,325 patent/US10598853B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190033523A1 (en) | 2019-01-31 |
WO2017151055A1 (en) | 2017-09-08 |
WO2017151055A9 (en) | 2018-11-15 |
US10598853B2 (en) | 2020-03-24 |
SG10201912982VA (en) | 2020-03-30 |
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