SG10201912982VA - Optical structure and method of forming the same - Google Patents

Optical structure and method of forming the same

Info

Publication number
SG10201912982VA
SG10201912982VA SG10201912982VA SG10201912982VA SG10201912982VA SG 10201912982V A SG10201912982V A SG 10201912982VA SG 10201912982V A SG10201912982V A SG 10201912982VA SG 10201912982V A SG10201912982V A SG 10201912982VA SG 10201912982V A SG10201912982V A SG 10201912982VA
Authority
SG
Singapore
Prior art keywords
forming
same
optical structure
optical
Prior art date
Application number
SG10201912982VA
Inventor
Chuan Seng Tan
Wei Li
P Anantha
Kwang Hong Lee
Shuyu Bao
Lin Zhang
Original Assignee
Univ Nanyang Tech
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nanyang Tech, Massachusetts Inst Technology filed Critical Univ Nanyang Tech
Publication of SG10201912982VA publication Critical patent/SG10201912982VA/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12119—Bend
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Integrated Circuits (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Adornments (AREA)
  • Prostheses (AREA)
SG10201912982VA 2016-02-29 2017-02-10 Optical structure and method of forming the same SG10201912982VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201601522Q 2016-02-29

Publications (1)

Publication Number Publication Date
SG10201912982VA true SG10201912982VA (en) 2020-03-30

Family

ID=59743101

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201806132TA SG11201806132TA (en) 2016-02-29 2017-02-10 Optical structure and method of forming the same
SG10201912982VA SG10201912982VA (en) 2016-02-29 2017-02-10 Optical structure and method of forming the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201806132TA SG11201806132TA (en) 2016-02-29 2017-02-10 Optical structure and method of forming the same

Country Status (3)

Country Link
US (1) US10598853B2 (en)
SG (2) SG11201806132TA (en)
WO (1) WO2017151055A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US11022824B2 (en) * 2016-11-23 2021-06-01 Rockley Photonics Limited Electro-optically active device
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7453129B2 (en) * 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US6897498B2 (en) 2003-03-31 2005-05-24 Sioptical, Inc. Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform
US7496260B2 (en) * 2007-03-27 2009-02-24 Imra America, Inc. Ultra high numerical aperture optical fibers
KR101344346B1 (en) * 2007-07-25 2013-12-24 삼성전자주식회사 Phase change memory devices and methods of forming the same
KR101750742B1 (en) 2011-10-14 2017-06-28 삼성전자주식회사 Photodetector structure
US9406832B2 (en) 2012-03-30 2016-08-02 Nec Corporation Waveguide-coupled MSM-type photodiode
US9171929B2 (en) * 2012-04-25 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Strained structure of semiconductor device and method of making the strained structure
US9285540B2 (en) * 2012-09-21 2016-03-15 The Regents Of The University Of California Integrated dielectric waveguide and semiconductor layer and method therefor
US9046650B2 (en) 2013-03-12 2015-06-02 The Massachusetts Institute Of Technology Methods and apparatus for mid-infrared sensing
US9612398B2 (en) * 2014-10-17 2017-04-04 The United States Of America, As Represented By The Secretary Of The Navy Ultra-broadband photonic integrated circuit platform and ultra-broadband photonic integrated circuit
BR102015027316B1 (en) * 2014-10-31 2021-07-27 Nichia Corporation LIGHT EMITTING DEVICE AND FRONT LAMP SYSTEM FOR ADAPTIVE DRIVE HEADLIGHT
US9916999B2 (en) * 2015-06-04 2018-03-13 Micron Technology, Inc. Methods of fabricating a semiconductor package structure including at least one redistribution layer

Also Published As

Publication number Publication date
US20190033523A1 (en) 2019-01-31
WO2017151055A9 (en) 2018-11-15
WO2017151055A1 (en) 2017-09-08
SG11201806132TA (en) 2018-09-27
US10598853B2 (en) 2020-03-24

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