SG11201702915QA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201702915QA SG11201702915QA SG11201702915QA SG11201702915QA SG11201702915QA SG 11201702915Q A SG11201702915Q A SG 11201702915QA SG 11201702915Q A SG11201702915Q A SG 11201702915QA SG 11201702915Q A SG11201702915Q A SG 11201702915QA SG 11201702915Q A SG11201702915Q A SG 11201702915QA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014215744A JP6482234B2 (ja) | 2014-10-22 | 2014-10-22 | 研磨用組成物 |
| PCT/JP2015/005217 WO2016063505A1 (fr) | 2014-10-22 | 2015-10-15 | Composition pour polissage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201702915QA true SG11201702915QA (en) | 2017-05-30 |
Family
ID=55760565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201702915QA SG11201702915QA (en) | 2014-10-22 | 2015-10-15 | Polishing composition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10190024B2 (fr) |
| EP (1) | EP3211053B1 (fr) |
| JP (1) | JP6482234B2 (fr) |
| KR (1) | KR102515964B1 (fr) |
| CN (1) | CN107075347B (fr) |
| SG (1) | SG11201702915QA (fr) |
| TW (1) | TWI718998B (fr) |
| WO (1) | WO2016063505A1 (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017200297A1 (fr) | 2016-05-19 | 2017-11-23 | 주식회사 동진쎄미켐 | Composition de suspension destinée au polissage mécano-chimique |
| WO2018147148A1 (fr) * | 2017-02-08 | 2018-08-16 | 株式会社フジミインコーポレーテッド | Composition de polissage |
| KR102410551B1 (ko) * | 2017-08-09 | 2022-06-16 | 쇼와덴코머티리얼즈가부시끼가이샤 | 연마액 및 연마 방법 |
| WO2019069370A1 (fr) * | 2017-10-03 | 2019-04-11 | 日立化成株式会社 | Liquide de polissage, ensemble de liquide de polissage, procédé de polissage, et procédé d'inhibition des défauts |
| JP7206695B2 (ja) * | 2017-11-10 | 2023-01-18 | 三菱ケミカル株式会社 | シリカゾル、研磨組成物、シリコンウェーハの研磨方法、シリコンウェーハの製造方法、化学的機械的研磨組成物及び半導体デバイスの製造方法 |
| JP7424967B2 (ja) * | 2018-03-28 | 2024-01-30 | 株式会社フジミインコーポレーテッド | ガリウム化合物系半導体基板研磨用組成物 |
| WO2020027260A1 (fr) * | 2018-08-03 | 2020-02-06 | ニッタ・ハース株式会社 | Composition de polissage |
| JP7115948B2 (ja) * | 2018-09-26 | 2022-08-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、ならびに研磨用組成物を用いた研磨方法およびこれを含む半導体基板の製造方法 |
| SG11202004596RA (en) * | 2018-11-01 | 2020-06-29 | Nissan Chemical Corp | Polishing composition comprising polishing particles having high water affinity |
| JP7222750B2 (ja) * | 2019-02-14 | 2023-02-15 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| JP7285113B2 (ja) * | 2019-03-29 | 2023-06-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7400209B2 (ja) * | 2019-05-07 | 2023-12-19 | 三菱ケミカル株式会社 | シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法 |
| US20210062043A1 (en) * | 2019-09-04 | 2021-03-04 | Cabot Microelectronics Corporation | Composition and method for polysilicon cmp |
| JP7351697B2 (ja) * | 2019-09-30 | 2023-09-27 | 日揮触媒化成株式会社 | シリカ粒子分散液及びその製造方法 |
| JP7375515B2 (ja) * | 2019-12-11 | 2023-11-08 | Jsr株式会社 | 化学機械研磨用組成物及び化学機械研磨方法 |
| KR20210095465A (ko) * | 2020-01-23 | 2021-08-02 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| JP7488672B2 (ja) * | 2020-03-19 | 2024-05-22 | 株式会社フジミインコーポレーテッド | 研磨方法および半導体基板の製造方法 |
| JP7398304B2 (ja) * | 2020-03-19 | 2023-12-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および半導体基板の製造方法 |
| JP2022052548A (ja) * | 2020-09-23 | 2022-04-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN112831788B (zh) * | 2020-12-31 | 2023-01-03 | 安徽百圣鑫金属科技有限公司 | 一种铝合金抛光处理工艺 |
| US20220348788A1 (en) * | 2021-04-27 | 2022-11-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| JPS6230333A (ja) * | 1985-05-20 | 1987-02-09 | ナルコ ケミカル カンパニ− | シリコンウエ−ハの研磨方法及び組成物 |
| JP2000160139A (ja) | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US20030104770A1 (en) * | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| JP4593064B2 (ja) | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| TW200517478A (en) | 2003-05-09 | 2005-06-01 | Sanyo Chemical Ind Ltd | Polishing liquid for CMP process and polishing method |
| JP2005268665A (ja) | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP2005268667A (ja) | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US20060135045A1 (en) | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
| JP2006231436A (ja) * | 2005-02-23 | 2006-09-07 | Tokyo Seimitsu Co Ltd | 研磨用スラリーおよび研磨方法 |
| WO2009104465A1 (fr) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | Dispersion aqueuse pour polissage mécano-chimique et procédé de polissage mécano-chimique |
| JP2010080864A (ja) * | 2008-09-29 | 2010-04-08 | Fujifilm Corp | 研磨液 |
| US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| CN102449747B (zh) * | 2009-08-19 | 2015-09-16 | 日立化成株式会社 | Cmp研磨液和研磨方法 |
| JP6005521B2 (ja) | 2010-11-08 | 2016-10-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた半導体基板の研磨方法 |
| JP6014050B2 (ja) * | 2011-01-21 | 2016-10-25 | キャボット マイクロエレクトロニクス コーポレイション | 改善されたｐｓｄ性能を有するシリコン研磨用組成物 |
| JP2013140646A (ja) * | 2011-12-28 | 2013-07-18 | Kao Corp | 磁気ディスク基板の製造方法 |
| JP2014041978A (ja) | 2012-08-23 | 2014-03-06 | Fujimi Inc | 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法 |
| DE112013005268T5 (de) * | 2012-11-02 | 2015-09-24 | Fujimi Incorporated | Polierzusammensetzung |
| JP2014187268A (ja) * | 2013-03-25 | 2014-10-02 | Hitachi Chemical Co Ltd | Ｃｍｐ研磨剤及び基板の研磨方法 |
-
2014
- 2014-10-22 JP JP2014215744A patent/JP6482234B2/ja active Active
-
2015
- 2015-10-15 EP EP15852540.2A patent/EP3211053B1/fr active Active
- 2015-10-15 US US15/519,578 patent/US10190024B2/en active Active
- 2015-10-15 CN CN201580056621.4A patent/CN107075347B/zh active Active
- 2015-10-15 WO PCT/JP2015/005217 patent/WO2016063505A1/fr active Application Filing
- 2015-10-15 SG SG11201702915QA patent/SG11201702915QA/en unknown
- 2015-10-15 KR KR1020177010175A patent/KR102515964B1/ko active IP Right Grant
- 2015-10-21 TW TW104134557A patent/TWI718998B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20170247574A1 (en) | 2017-08-31 |
| KR102515964B1 (ko) | 2023-03-31 |
| CN107075347B (zh) | 2020-03-20 |
| EP3211053A4 (fr) | 2017-09-06 |
| US10190024B2 (en) | 2019-01-29 |
| TW201629183A (zh) | 2016-08-16 |
| TWI718998B (zh) | 2021-02-21 |
| JP6482234B2 (ja) | 2019-03-13 |
| WO2016063505A1 (fr) | 2016-04-28 |
| EP3211053B1 (fr) | 2018-12-19 |
| JP2016084371A (ja) | 2016-05-19 |
| CN107075347A (zh) | 2017-08-18 |
| KR20170074869A (ko) | 2017-06-30 |
| EP3211053A1 (fr) | 2017-08-30 |
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