SG11201701929VA - Method for cleaning wafer, and chemical used in such cleaning method - Google Patents

Method for cleaning wafer, and chemical used in such cleaning method

Info

Publication number
SG11201701929VA
SG11201701929VA SG11201701929VA SG11201701929VA SG11201701929VA SG 11201701929V A SG11201701929V A SG 11201701929VA SG 11201701929V A SG11201701929V A SG 11201701929VA SG 11201701929V A SG11201701929V A SG 11201701929VA SG 11201701929V A SG11201701929V A SG 11201701929VA
Authority
SG
Singapore
Prior art keywords
cleaning
chemical used
wafer
cleaning wafer
chemical
Prior art date
Application number
SG11201701929VA
Inventor
Takashi Saio
Yuzo Okumura
Yuki Fukui
Soichi Kumon
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority claimed from PCT/JP2015/075780 external-priority patent/WO2016043128A1/en
Publication of SG11201701929VA publication Critical patent/SG11201701929VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02085—Cleaning of diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG11201701929VA 2014-09-18 2015-09-11 Method for cleaning wafer, and chemical used in such cleaning method SG11201701929VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014190070 2014-09-18
JP2015169619A JP6493095B2 (en) 2014-09-18 2015-08-28 Wafer cleaning method and chemical solution used for the cleaning method
PCT/JP2015/075780 WO2016043128A1 (en) 2014-09-18 2015-09-11 Method for cleaning wafer, and chemical used in such cleaning method

Publications (1)

Publication Number Publication Date
SG11201701929VA true SG11201701929VA (en) 2017-04-27

Family

ID=55804320

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701929VA SG11201701929VA (en) 2014-09-18 2015-09-11 Method for cleaning wafer, and chemical used in such cleaning method

Country Status (6)

Country Link
US (1) US20170287705A1 (en)
JP (1) JP6493095B2 (en)
KR (1) KR101934656B1 (en)
CN (1) CN107078041A (en)
SG (1) SG11201701929VA (en)
TW (1) TW201620032A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102008305B1 (en) * 2016-11-07 2019-08-07 세메스 주식회사 Substrate treating apparatus and substrate treating method
JP2018107338A (en) * 2016-12-27 2018-07-05 株式会社Sumco Cleaning method of wafer
JP7040869B2 (en) * 2017-07-28 2022-03-23 株式会社Ｓｃｒｅｅｎホールディングス Board processing equipment and parts inspection method for substrate processing equipment
US20200339850A1 (en) * 2018-02-13 2020-10-29 Central Glass Company, Limited Chemical solution for forming water-repellent protective film, method for preparing same, and method for manufacturing surface-treated body
US20200339611A1 (en) * 2018-02-13 2020-10-29 Central Glass Company, Limited Water-repellent protective film-forming agent, water-repellent protective film-forming chemical solution, and wafer surface treatment method
JP7292020B2 (en) 2018-08-27 2023-06-16 東京応化工業株式会社 Surface treatment agent and surface treatment method
JP7166113B2 (en) 2018-09-11 2022-11-07 東京応化工業株式会社 Surface treatment agent and surface treatment method
CN109530374B (en) * 2018-11-21 2021-07-27 上海超硅半导体有限公司 Wafer box cleaning method
JP7446097B2 (en) 2019-12-06 2024-03-08 東京応化工業株式会社 Surface treatment agent and surface treatment method
CN113506726B (en) * 2021-09-13 2021-12-31 广州粤芯半导体技术有限公司 Wafer cleaning method and method for manufacturing semiconductor device
US11769660B2 (en) * 2021-12-03 2023-09-26 Pulseforge, Inc. Method and apparatus for removing particles from the surface of a semiconductor wafer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259136A (en) 1992-03-12 1993-10-08 Tokyo Electron Ltd Cleaning treatment apparatus
JP3289469B2 (en) * 1994-03-04 2002-06-04 富士通株式会社 Substrate cleaning device and cleaning method
JPH10189527A (en) 1996-12-20 1998-07-21 Fujitsu Ltd Method and apparatus for manufacturing method of semiconductor device
JP4271267B2 (en) 1997-02-14 2009-06-03 大日本スクリーン製造株式会社 Substrate processing method
JPH11283949A (en) 1998-03-31 1999-10-15 Tokyo Electron Ltd Device and method for substrate cleaning
JP3704260B2 (en) 1999-09-22 2005-10-12 大日本スクリーン製造株式会社 Substrate cleaning apparatus and substrate cleaning method
JP2008098440A (en) 2006-10-12 2008-04-24 Matsushita Electric Ind Co Ltd Washing device and washing method of semiconductor device
JP2010003739A (en) 2008-06-18 2010-01-07 Tokyo Electron Ltd Substrate cleaning apparatus
JP5533178B2 (en) * 2009-04-24 2014-06-25 セントラル硝子株式会社 Silicon wafer cleaning agent
US9053924B2 (en) * 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
JP5708191B2 (en) * 2010-05-19 2015-04-30 セントラル硝子株式会社 Chemical solution for protective film formation
CN102403225B (en) * 2010-09-07 2013-08-14 无锡华润上华半导体有限公司 Manufacturing method and device of channel double-diffusion metal oxide semiconductor
WO2012147716A1 (en) * 2011-04-28 2012-11-01 セントラル硝子株式会社 Water-repellent protective film-forming chemical solution and wafer cleaning method using same

Also Published As

Publication number Publication date
CN107078041A (en) 2017-08-18
US20170287705A1 (en) 2017-10-05
KR101934656B1 (en) 2019-01-02
JP2016066785A (en) 2016-04-28
JP6493095B2 (en) 2019-04-03
KR20170041266A (en) 2017-04-14
TW201620032A (en) 2016-06-01

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