SG11201609999TA - Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity - Google Patents

Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity

Info

Publication number
SG11201609999TA
SG11201609999TA SG11201609999TA SG11201609999TA SG11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA
Authority
SG
Singapore
Prior art keywords
nitride
removal rate
high removal
oxide over
cmp compositions
Prior art date
Application number
SG11201609999TA
Other languages
English (en)
Inventor
Tina Li
Kevin Dockery
Renhe Jia
Jeffrey Dysard
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/289,728 external-priority patent/US9165489B2/en
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG11201609999TA publication Critical patent/SG11201609999TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201609999TA 2014-05-29 2015-05-29 Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity SG11201609999TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/289,728 US9165489B2 (en) 2013-05-21 2014-05-29 CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
PCT/US2015/033277 WO2015184320A1 (fr) 2014-05-29 2015-05-29 Compositions de pcm sélectives pour un oxyde sur du polysilicium et du nitrure avec un taux d'élimination élevé et une faible défectivité

Publications (1)

Publication Number Publication Date
SG11201609999TA true SG11201609999TA (en) 2016-12-29

Family

ID=54699892

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201609999TA SG11201609999TA (en) 2014-05-29 2015-05-29 Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity

Country Status (7)

Country Link
EP (1) EP3149101B1 (fr)
JP (1) JP6595510B2 (fr)
KR (1) KR102444552B1 (fr)
CN (1) CN106414651B (fr)
SG (1) SG11201609999TA (fr)
TW (1) TWI530557B (fr)
WO (1) WO2015184320A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
KR101628878B1 (ko) * 2015-09-25 2016-06-16 영창케미칼 주식회사 Cmp용 슬러리 조성물 및 이를 이용한 연마방법
JP7041135B2 (ja) * 2016-10-17 2022-03-23 シーエムシー マテリアルズ，インコーポレイティド 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のｃｍｐ組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7112123B2 (en) * 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
KR100949250B1 (ko) * 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
CN101623843A (zh) * 2009-07-31 2010-01-13 昆山光爱电子材料有限公司 低通光学滤波器超薄晶片的制造方法
US8822339B2 (en) * 2009-10-13 2014-09-02 Lg Chem, Ltd. Slurry composition for CMP, and polishing method
KR101675378B1 (ko) * 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
CN102329572B (zh) * 2011-09-20 2013-08-21 深圳市力合材料有限公司 一种铜化学机械抛光组合物
US9165489B2 (en) * 2013-05-21 2015-10-20 Cabot Microelectronics Corporation CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity

Also Published As

Publication number Publication date
WO2015184320A1 (fr) 2015-12-03
JP2017526160A (ja) 2017-09-07
KR20170012415A (ko) 2017-02-02
EP3149101A4 (fr) 2018-01-24
EP3149101A1 (fr) 2017-04-05
EP3149101B1 (fr) 2019-11-13
TW201544585A (zh) 2015-12-01
TWI530557B (zh) 2016-04-21
CN106414651B (zh) 2019-02-15
CN106414651A (zh) 2017-02-15
KR102444552B1 (ko) 2022-09-20
JP6595510B2 (ja) 2019-10-23

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