SG11201607363TA - Methods and apparatus for rapidly cooling a substrate - Google Patents

Methods and apparatus for rapidly cooling a substrate

Info

Publication number
SG11201607363TA
SG11201607363TA SG11201607363TA SG11201607363TA SG11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA SG 11201607363T A SG11201607363T A SG 11201607363TA
Authority
SG
Singapore
Prior art keywords
substrate
methods
rapidly cooling
rapidly
cooling
Prior art date
Application number
SG11201607363TA
Other languages
English (en)
Inventor
Jallepally Ravi
Steven V Sansoni
Kirankumar Savandaiah
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201607363TA publication Critical patent/SG11201607363TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201607363TA 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate SG11201607363TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/251,134 US9779971B2 (en) 2014-04-11 2014-04-11 Methods and apparatus for rapidly cooling a substrate
PCT/US2015/020905 WO2015156968A1 (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Publications (1)

Publication Number Publication Date
SG11201607363TA true SG11201607363TA (en) 2016-10-28

Family

ID=54265673

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607363TA SG11201607363TA (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Country Status (7)

Country Link
US (2) US9779971B2 (enrdf_load_stackoverflow)
JP (1) JP6574442B2 (enrdf_load_stackoverflow)
KR (1) KR102350501B1 (enrdf_load_stackoverflow)
CN (1) CN106133874B (enrdf_load_stackoverflow)
SG (1) SG11201607363TA (enrdf_load_stackoverflow)
TW (1) TWI670386B (enrdf_load_stackoverflow)
WO (1) WO2015156968A1 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112261A (zh) * 2014-12-11 2017-08-29 瑞士艾发科技 尤其用于基体的除气的设备和方法
JP6554387B2 (ja) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 ロードロック装置における基板冷却方法、基板搬送方法、およびロードロック装置
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
JP6863780B2 (ja) * 2017-03-10 2021-04-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
TWI838222B (zh) 2017-10-27 2024-04-01 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
USD931240S1 (en) 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal
US20230253189A1 (en) * 2020-07-13 2023-08-10 Lam Research Corporation Seal venting in a substrate processing chamber
JP7285276B2 (ja) * 2021-03-25 2023-06-01 株式会社Kokusai Electric 冷却方法及び半導体装置の製造方法及び処理装置
CN117836919A (zh) * 2021-11-19 2024-04-05 应用材料公司 用于减少基板冷却时间的设备及方法

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US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JP3272458B2 (ja) * 1993-03-04 2002-04-08 株式会社日立国際電気 基板冷却装置及び基板冷却方法
JPH07254545A (ja) * 1994-03-15 1995-10-03 Oki Electric Ind Co Ltd 半導体基板の熱処理方法及びそのための装置
JP2971818B2 (ja) * 1996-09-24 1999-11-08 イートン コーポレーション ウエハー熱処理装置
US6108937A (en) 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
JP3476687B2 (ja) * 1998-09-21 2003-12-10 東京エレクトロン株式会社 プラズマ処理装置
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
JP2003124134A (ja) * 2001-10-10 2003-04-25 Semiconductor Leading Edge Technologies Inc 加熱処理装置および加熱処理方法
JP3921234B2 (ja) * 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6778762B1 (en) * 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US7429718B2 (en) 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7743730B2 (en) * 2005-12-21 2010-06-29 Lam Research Corporation Apparatus for an optimized plasma chamber grounded electrode assembly
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
US7803419B2 (en) * 2006-09-22 2010-09-28 Abound Solar, Inc. Apparatus and method for rapid cooling of large area substrates in vacuum
US7378618B1 (en) 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
JP2008192643A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP2009290087A (ja) * 2008-05-30 2009-12-10 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
US8033771B1 (en) * 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
WO2010150590A1 (ja) * 2009-06-24 2010-12-29 キヤノンアネルバ株式会社 真空加熱冷却装置および磁気抵抗素子の製造方法
WO2011037020A1 (ja) * 2009-09-28 2011-03-31 東京エレクトロン株式会社 被処理体の冷却方法、冷却装置及びコンピュータ読み取り可能な記憶媒体
TW201135845A (en) 2009-10-09 2011-10-16 Canon Anelva Corp Acuum heating and cooling apparatus
KR20120120102A (ko) * 2010-10-18 2012-11-01 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 진공처리방법
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
US20120196242A1 (en) * 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US9051649B2 (en) * 2013-03-11 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film deposition apparatus and method with improved heater cooling efficiency
KR20150090943A (ko) * 2014-01-29 2015-08-07 세메스 주식회사 기판처리장치 및 방법

Also Published As

Publication number Publication date
JP2017517877A (ja) 2017-06-29
TWI670386B (zh) 2019-09-01
KR20160138303A (ko) 2016-12-02
TW201540860A (zh) 2015-11-01
CN106133874A (zh) 2016-11-16
WO2015156968A1 (en) 2015-10-15
US10312116B2 (en) 2019-06-04
CN106133874B (zh) 2019-09-06
JP6574442B2 (ja) 2019-09-11
US20180025924A1 (en) 2018-01-25
KR102350501B1 (ko) 2022-01-11
US20150294886A1 (en) 2015-10-15
US9779971B2 (en) 2017-10-03

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