SG11201600360YA - Cmp composition comprising abrasive particles containing ceria - Google Patents

Cmp composition comprising abrasive particles containing ceria

Info

Publication number
SG11201600360YA
SG11201600360YA SG11201600360YA SG11201600360YA SG11201600360YA SG 11201600360Y A SG11201600360Y A SG 11201600360YA SG 11201600360Y A SG11201600360Y A SG 11201600360YA SG 11201600360Y A SG11201600360Y A SG 11201600360YA SG 11201600360Y A SG11201600360Y A SG 11201600360YA
Authority
SG
Singapore
Prior art keywords
abrasive particles
particles containing
cmp composition
containing ceria
ceria
Prior art date
Application number
SG11201600360YA
Inventor
Michael Lauter
Yuzhuo Li
Bastian Marten Noller
Roland Lange
Robert Reichardt
Yongqing Lan
Volodymyr Boyko
Alexander Kraus
Joachim Von Seyerl
Ibrahim Sheik Ansar Usman
Max Siebert
Kristine Hartnagel
Joachim Dengler
Nina Susanne Hillesheim
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201600360YA publication Critical patent/SG11201600360YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/02—Emulsion paints including aerosols
    • C09D5/024—Emulsion paints including aerosols characterised by the additives
    • C09D5/027—Dispersing agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/65—Additives macromolecular
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG11201600360YA 2013-07-18 2014-07-08 Cmp composition comprising abrasive particles containing ceria SG11201600360YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13177123.0A EP2826827B1 (en) 2013-07-18 2013-07-18 CMP composition comprising abrasive particles containing ceria
PCT/IB2014/062940 WO2015008193A1 (en) 2013-07-18 2014-07-08 Cmp composition comprising abrasive particles containing ceria

Publications (1)

Publication Number Publication Date
SG11201600360YA true SG11201600360YA (en) 2016-02-26

Family

ID=48793986

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600360YA SG11201600360YA (en) 2013-07-18 2014-07-08 Cmp composition comprising abrasive particles containing ceria

Country Status (10)

Country Link
US (1) US20160160083A1 (en)
EP (1) EP2826827B1 (en)
JP (1) JP6445004B2 (en)
KR (1) KR20160034960A (en)
CN (1) CN105555889B (en)
IL (1) IL243557A0 (en)
RU (1) RU2661571C2 (en)
SG (1) SG11201600360YA (en)
TW (1) TWI659077B (en)
WO (1) WO2015008193A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3088483A1 (en) 2015-04-26 2016-11-02 Rubenok Viacheslav Abrasive pastes for cleaning and polishing
JP6586799B2 (en) * 2015-07-07 2019-10-09 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
CN107949615B (en) * 2015-09-09 2023-08-04 株式会社力森诺科 Polishing liquid, polishing liquid set and method for polishing substrate
WO2017117404A1 (en) * 2015-12-29 2017-07-06 Cabot Microelectronics Corporation Cmp processing composition comprising alkylamine and cyclodextrin
CN106675519A (en) * 2016-12-21 2017-05-17 安徽中创电子信息材料有限公司 Inorganic compound abrasive and preparation method thereof
KR20190098142A (en) * 2016-12-28 2019-08-21 니타 하스 인코포레이티드 Polishing composition
JP6916039B2 (en) * 2017-06-05 2021-08-11 Ａｔシリカ株式会社 Polishing composition
JP7045171B2 (en) * 2017-11-28 2022-03-31 花王株式会社 Abrasive liquid composition
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US20200270479A1 (en) * 2019-02-26 2020-08-27 Versum Materials Us, Llc Shallow Trench Isolation Chemical And Mechanical Polishing Slurry
KR20220110799A (en) * 2019-12-04 2022-08-09 버슘머트리얼즈 유에스, 엘엘씨 High Oxide Removal Rate Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) Polishing
WO2021111256A1 (en) * 2019-12-04 2021-06-10 3M Innovative Properties Company Particulate slurries and methods of making the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2696736B1 (en) 1992-10-12 1994-12-30 Chryso Fluidizers for aqueous suspensions of mineral particles and hydraulic binder pastes.
US6110396A (en) 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
JP4278773B2 (en) * 1999-04-30 2009-06-17 花王株式会社 Polishing liquid composition
US6645265B1 (en) 2002-07-19 2003-11-11 Saint-Gobain Ceramics And Plastics, Inc. Polishing formulations for SiO2-based substrates
KR100574225B1 (en) 2003-10-10 2006-04-26 요업기술원 Silica/Ceria/Silica Composite Particles for CMP slurry and Process for its production
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
DE102004032399A1 (en) * 2004-07-03 2006-02-09 Construction Research & Technology Gmbh Blend composition containing copolymers based on unsaturated carboxylic acid and alkenyl ether derivatives and sulfo-containing copolymers and terpolymers
CN101311205A (en) * 2004-07-23 2008-11-26 日立化成工业株式会社 Cmp polishing agent and method for polishing substrate
KR100786950B1 (en) * 2004-12-29 2007-12-17 주식회사 엘지화학 Supplement agent for chemical mechanical polishing slurry
US7674716B2 (en) 2004-12-29 2010-03-09 Lg Chem. Ltd. Adjuvant for chemical mechanical polishing slurry
CN101237921B (en) * 2005-03-31 2012-05-09 罗迪亚公司 Mineral particle dispersions stabilized with a poly (oxyalkene) phosphonate
AT502308B1 (en) * 2005-07-20 2010-03-15 Treibacher Ind Ag CEROXID BASE GLASS COIL AND METHOD FOR THE PRODUCTION THEREOF
KR100786948B1 (en) * 2005-12-08 2007-12-17 주식회사 엘지화학 Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same
KR100880107B1 (en) * 2006-01-25 2009-01-21 주식회사 엘지화학 Cmp slurry and method for polishing semiconductor wafer using the same
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US8741008B2 (en) * 2008-02-18 2014-06-03 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
PL2664595T3 (en) * 2008-09-02 2019-05-31 Construction Research & Tech Gmbh Process for preparing a plasticizer-containing hardening accelerator composition
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
CN102239127B (en) * 2008-10-06 2014-08-06 建筑研究和技术有限公司 Phosphated polycondensation product, method for production and use thereof
EP2489714B1 (en) * 2009-10-13 2015-08-12 LG Chem, Ltd. Slurry composition for cmp, and polishing method
RU2598945C2 (en) * 2010-04-21 2016-10-10 Басф Се Use of csh suspensions in cementing of wells
WO2012063757A1 (en) * 2010-11-08 2012-05-18 株式会社 フジミインコーポレーテッド Composition for polishing and method of polishing semiconductor substrate using same
EP2463317A1 (en) * 2010-12-09 2012-06-13 BASF Construction Polymers GmbH Additive for construction material mixtures containing a fluid phase
EP2753670B1 (en) * 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
EP2568024A1 (en) * 2011-09-07 2013-03-13 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
ES2528746T3 (en) * 2011-11-11 2015-02-12 Omya International Ag Aqueous suspensions of materials comprising calcium carbonate with low deposit formation
TWI573864B (en) * 2012-03-14 2017-03-11 卡博特微電子公司 Cmp compositions selective for oxide and nitride with high removal rate and low defectivity

Also Published As

Publication number Publication date
RU2661571C2 (en) 2018-07-17
CN105555889B (en) 2018-11-27
JP2016529356A (en) 2016-09-23
CN105555889A (en) 2016-05-04
EP2826827A1 (en) 2015-01-21
TW201516104A (en) 2015-05-01
JP6445004B2 (en) 2018-12-26
EP2826827B1 (en) 2019-06-12
KR20160034960A (en) 2016-03-30
RU2016105297A (en) 2017-08-23
IL243557A0 (en) 2016-02-29
US20160160083A1 (en) 2016-06-09
TWI659077B (en) 2019-05-11
RU2016105297A3 (en) 2018-04-27
WO2015008193A1 (en) 2015-01-22

Similar Documents

Publication Publication Date Title
IL243557A0 (en) Cmp composition comprising abrasive particles containing ceria
EP3265534A4 (en) Polishing composition containing ceria abrasive
EP3055376A4 (en) Mixed abrasive polishing compositions
ZA201604565B (en) Abrasive cleaning composition
PL3013525T3 (en) Abrasive article including shaped abrasive particles
EP3089851A4 (en) Abrasive article including shaped abrasive particles
EP3013523A4 (en) Abrasive article including shaped abrasive particles
EP3013524A4 (en) Abrasive article including shaped abrasive particles
EP2964424A4 (en) Nonwoven abrasive article containing formed abrasive particles
SG11201600242PA (en) Low density polishing pad
EP3087164A4 (en) Nanosheet compositions and their use in lubricants and polishing slurries
SG11201506102TA (en) Polishing slurry for cobalt removal
HK1198889A1 (en) Grinder
SG11201602206PA (en) Composite ceramic abrasive polishing solution
SG11201503355WA (en) Polishing composition
SG11201502768UA (en) Polishing composition
SG11201503751TA (en) Polishing composition
EP2951260A4 (en) Chemical-mechanical polishing composition containing zirconia and metal oxidizer
SG11201505037VA (en) Polishing composition
SG11201601847WA (en) Polishing composition
SG11201501849RA (en) Polishing composition
SG11201601941SA (en) Polishing composition
SG11201502766QA (en) Polishing composition
IL240809B (en) Chemical-mechanical polishing compositions comprising polyethylene imine
EP2915859A4 (en) Polishing composition