SG11201500815YA - Heating element for a planar heater of a mocvd reactor - Google Patents

Heating element for a planar heater of a mocvd reactor

Info

Publication number
SG11201500815YA
SG11201500815YA SG11201500815YA SG11201500815YA SG11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA
Authority
SG
Singapore
Prior art keywords
heating element
planar heater
mocvd reactor
mocvd
reactor
Prior art date
Application number
SG11201500815YA
Other languages
English (en)
Inventor
Hans-Peter Martinz
Manfred Sulik
Vadim Boguslavskiy
Original Assignee
Plansee Se
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Se, Veeco Instr Inc filed Critical Plansee Se
Publication of SG11201500815YA publication Critical patent/SG11201500815YA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
    • B22F7/004Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201500815YA 2012-08-07 2013-08-05 Heating element for a planar heater of a mocvd reactor SG11201500815YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/568,915 US20140041589A1 (en) 2012-08-07 2012-08-07 Heating element for a planar heater of a mocvd reactor
PCT/EP2013/002337 WO2014023414A1 (en) 2012-08-07 2013-08-05 Heating element for a planar heater of a mocvd reactor

Publications (1)

Publication Number Publication Date
SG11201500815YA true SG11201500815YA (en) 2015-03-30

Family

ID=49035508

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500815YA SG11201500815YA (en) 2012-08-07 2013-08-05 Heating element for a planar heater of a mocvd reactor

Country Status (7)

Country Link
US (1) US20140041589A1 (ja)
EP (2) EP2882884B1 (ja)
JP (1) JP6422866B2 (ja)
KR (1) KR102042878B1 (ja)
SG (1) SG11201500815YA (ja)
TW (1) TWI605475B (ja)
WO (1) WO2014023414A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9992917B2 (en) 2014-03-10 2018-06-05 Vulcan GMS 3-D printing method for producing tungsten-based shielding parts
AT15991U1 (de) 2017-05-12 2018-10-15 Plansee Se Hochtemperaturkomponente
DE102018105220A1 (de) * 2018-03-07 2019-09-12 Hauni Maschinenbau Gmbh Verfahren zur Fertigung eines elektrisch betreibbaren Heizkörpers für einen Inhalator
AT17391U1 (de) 2020-07-31 2022-03-15 Plansee Se Hochtemperaturkomponente
EP4186881A1 (en) 2021-11-24 2023-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Producing tantalum carbide layer on technical ceramics using a spray coating and high-temperature sintering process based on aqueous solutions

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737714A (en) * 1964-12-18 1973-06-05 Sylvania Electric Prod Dark coated heater for vacuum tube cathode
US3808043A (en) 1972-05-30 1974-04-30 Rca Corp Method of fabricating a dark heater
US4415835A (en) * 1981-06-22 1983-11-15 General Electric Company Electron emissive coatings for electric discharge devices
JPH0692736A (ja) * 1992-09-14 1994-04-05 Tokai Carbon Co Ltd 炭化珪素焼結体の電気抵抗制御法
US5641363A (en) * 1993-12-27 1997-06-24 Tdk Corporation Sintered magnet and method for making
US6133557A (en) * 1995-01-31 2000-10-17 Kyocera Corporation Wafer holding member
DE19652822A1 (de) * 1996-12-18 1998-06-25 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Sinterelektrode
DE19835476A1 (de) * 1998-08-06 2000-02-10 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Elektrode für eine Hochdruckentladungslampe mit langer Lebensdauer
JP4505073B2 (ja) * 1999-03-25 2010-07-14 独立行政法人科学技術振興機構 化学蒸着装置
JP2001297857A (ja) * 1999-11-24 2001-10-26 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
JP3228924B2 (ja) * 2000-01-21 2001-11-12 イビデン株式会社 半導体製造・検査装置用セラミックヒータ
US7057350B2 (en) * 2004-05-05 2006-06-06 Matsushita Electric Industrial Co. Ltd. Metal halide lamp with improved lumen value maintenance
US7666323B2 (en) * 2004-06-09 2010-02-23 Veeco Instruments Inc. System and method for increasing the emissivity of a material
JP4454527B2 (ja) * 2005-03-31 2010-04-21 日本碍子株式会社 発光管及び高圧放電灯
US7638737B2 (en) * 2005-06-16 2009-12-29 Ngk Spark Plug Co., Ltd. Ceramic-metal assembly and ceramic heater
JP3972944B2 (ja) * 2005-09-12 2007-09-05 住友電気工業株式会社 セラミックスヒータ及びそれを備えた半導体製造装置
US20070175905A1 (en) * 2005-11-28 2007-08-02 Matheson Tri-Gas, Inc. Gas storage container linings formed with chemical vapor deposition
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
KR101099371B1 (ko) * 2009-10-14 2011-12-29 엘아이지에이디피 주식회사 버퍼 챔버를 구비하는 금속 유기물 화학기상증착장치
US20120234240A1 (en) * 2011-03-17 2012-09-20 Nps Corporation Graphene synthesis chamber and method of synthesizing graphene by using the same

Also Published As

Publication number Publication date
WO2014023414A1 (en) 2014-02-13
JP6422866B2 (ja) 2018-11-14
JP2015527742A (ja) 2015-09-17
EP2882884A1 (en) 2015-06-17
EP2882884B1 (en) 2016-11-30
TW201413747A (zh) 2014-04-01
TWI605475B (zh) 2017-11-11
EP3130689A1 (en) 2017-02-15
KR102042878B1 (ko) 2019-11-08
US20140041589A1 (en) 2014-02-13
KR20150040907A (ko) 2015-04-15
CN104662197A (zh) 2015-05-27

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