SG11201500815YA - Heating element for a planar heater of a mocvd reactor - Google Patents
Heating element for a planar heater of a mocvd reactorInfo
- Publication number
- SG11201500815YA SG11201500815YA SG11201500815YA SG11201500815YA SG11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA SG 11201500815Y A SG11201500815Y A SG 11201500815YA
- Authority
- SG
- Singapore
- Prior art keywords
- heating element
- planar heater
- mocvd reactor
- mocvd
- reactor
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
- B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/568,915 US20140041589A1 (en) | 2012-08-07 | 2012-08-07 | Heating element for a planar heater of a mocvd reactor |
PCT/EP2013/002337 WO2014023414A1 (en) | 2012-08-07 | 2013-08-05 | Heating element for a planar heater of a mocvd reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201500815YA true SG11201500815YA (en) | 2015-03-30 |
Family
ID=49035508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201500815YA SG11201500815YA (en) | 2012-08-07 | 2013-08-05 | Heating element for a planar heater of a mocvd reactor |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140041589A1 (de) |
EP (2) | EP2882884B1 (de) |
JP (1) | JP6422866B2 (de) |
KR (1) | KR102042878B1 (de) |
SG (1) | SG11201500815YA (de) |
TW (1) | TWI605475B (de) |
WO (1) | WO2014023414A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
AT15991U1 (de) * | 2017-05-12 | 2018-10-15 | Plansee Se | Hochtemperaturkomponente |
DE102018105220A1 (de) * | 2018-03-07 | 2019-09-12 | Hauni Maschinenbau Gmbh | Verfahren zur Fertigung eines elektrisch betreibbaren Heizkörpers für einen Inhalator |
AT17391U1 (de) | 2020-07-31 | 2022-03-15 | Plansee Se | Hochtemperaturkomponente |
EP4186881A1 (de) | 2021-11-24 | 2023-05-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Herstellung einer tantalcarbidschicht auf technischen keramiken mittels sprühbeschichtung und hochtemperatursinterverfahren auf basis wässriger lösungen |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3737714A (en) * | 1964-12-18 | 1973-06-05 | Sylvania Electric Prod | Dark coated heater for vacuum tube cathode |
US3808043A (en) | 1972-05-30 | 1974-04-30 | Rca Corp | Method of fabricating a dark heater |
US4415835A (en) * | 1981-06-22 | 1983-11-15 | General Electric Company | Electron emissive coatings for electric discharge devices |
JPH0692736A (ja) * | 1992-09-14 | 1994-04-05 | Tokai Carbon Co Ltd | 炭化珪素焼結体の電気抵抗制御法 |
US5641363A (en) * | 1993-12-27 | 1997-06-24 | Tdk Corporation | Sintered magnet and method for making |
US6133557A (en) * | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
DE19652822A1 (de) * | 1996-12-18 | 1998-06-25 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Sinterelektrode |
DE19835476A1 (de) * | 1998-08-06 | 2000-02-10 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Elektrode für eine Hochdruckentladungslampe mit langer Lebensdauer |
JP4505073B2 (ja) * | 1999-03-25 | 2010-07-14 | 独立行政法人科学技術振興機構 | 化学蒸着装置 |
JP2001297857A (ja) * | 1999-11-24 | 2001-10-26 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
JP3228924B2 (ja) * | 2000-01-21 | 2001-11-12 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
US7057350B2 (en) * | 2004-05-05 | 2006-06-06 | Matsushita Electric Industrial Co. Ltd. | Metal halide lamp with improved lumen value maintenance |
US7666323B2 (en) * | 2004-06-09 | 2010-02-23 | Veeco Instruments Inc. | System and method for increasing the emissivity of a material |
JP4454527B2 (ja) * | 2005-03-31 | 2010-04-21 | 日本碍子株式会社 | 発光管及び高圧放電灯 |
US7638737B2 (en) * | 2005-06-16 | 2009-12-29 | Ngk Spark Plug Co., Ltd. | Ceramic-metal assembly and ceramic heater |
JP3972944B2 (ja) * | 2005-09-12 | 2007-09-05 | 住友電気工業株式会社 | セラミックスヒータ及びそれを備えた半導体製造装置 |
US20070175905A1 (en) * | 2005-11-28 | 2007-08-02 | Matheson Tri-Gas, Inc. | Gas storage container linings formed with chemical vapor deposition |
US20070181065A1 (en) * | 2006-02-09 | 2007-08-09 | General Electric Company | Etch resistant heater and assembly thereof |
KR101099371B1 (ko) * | 2009-10-14 | 2011-12-29 | 엘아이지에이디피 주식회사 | 버퍼 챔버를 구비하는 금속 유기물 화학기상증착장치 |
US20120234240A1 (en) * | 2011-03-17 | 2012-09-20 | Nps Corporation | Graphene synthesis chamber and method of synthesizing graphene by using the same |
-
2012
- 2012-08-07 US US13/568,915 patent/US20140041589A1/en not_active Abandoned
-
2013
- 2013-06-14 TW TW102121081A patent/TWI605475B/zh active
- 2013-08-05 WO PCT/EP2013/002337 patent/WO2014023414A1/en active Application Filing
- 2013-08-05 SG SG11201500815YA patent/SG11201500815YA/en unknown
- 2013-08-05 EP EP13753087.9A patent/EP2882884B1/de active Active
- 2013-08-05 JP JP2015525776A patent/JP6422866B2/ja active Active
- 2013-08-05 KR KR1020157003036A patent/KR102042878B1/ko active IP Right Grant
- 2013-08-05 EP EP16001871.9A patent/EP3130689A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR102042878B1 (ko) | 2019-11-08 |
EP2882884A1 (de) | 2015-06-17 |
WO2014023414A1 (en) | 2014-02-13 |
TW201413747A (zh) | 2014-04-01 |
TWI605475B (zh) | 2017-11-11 |
EP2882884B1 (de) | 2016-11-30 |
US20140041589A1 (en) | 2014-02-13 |
KR20150040907A (ko) | 2015-04-15 |
CN104662197A (zh) | 2015-05-27 |
EP3130689A1 (de) | 2017-02-15 |
JP6422866B2 (ja) | 2018-11-14 |
JP2015527742A (ja) | 2015-09-17 |
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