SG11201408484TA - Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures - Google Patents
Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperaturesInfo
- Publication number
- SG11201408484TA SG11201408484TA SG11201408484TA SG11201408484TA SG11201408484TA SG 11201408484T A SG11201408484T A SG 11201408484TA SG 11201408484T A SG11201408484T A SG 11201408484TA SG 11201408484T A SG11201408484T A SG 11201408484TA SG 11201408484T A SG11201408484T A SG 11201408484TA
- Authority
- SG
- Singapore
- Prior art keywords
- ain
- cubic
- alloys
- plasma
- low temperatures
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
- 238000003877 atomic layer epitaxy Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
- C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261661016P | 2012-06-18 | 2012-06-18 | |
PCT/US2013/045569 WO2013192001A1 (en) | 2012-06-18 | 2013-06-13 | Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201408484TA true SG11201408484TA (en) | 2015-05-28 |
Family
ID=49755138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201408484TA SG11201408484TA (en) | 2012-06-18 | 2013-06-13 | Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures |
Country Status (6)
Country | Link |
---|---|
US (4) | US9773666B2 (zh) |
EP (1) | EP2862199A4 (zh) |
JP (1) | JP2015525484A (zh) |
CN (1) | CN104471676B (zh) |
SG (1) | SG11201408484TA (zh) |
WO (1) | WO2013192001A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10347722B2 (en) * | 2015-03-04 | 2019-07-09 | Lehigh University | Artificially engineered III-nitride digital alloy |
CN106024583B (zh) * | 2016-05-13 | 2018-08-14 | 西北大学 | 一种在Si(100)衬底上制备不同晶相择优生长InN的方法 |
JP7245501B2 (ja) * | 2018-03-02 | 2023-03-24 | 国立大学法人東海国立大学機構 | Iii族窒化物半導体素子の製造方法および基板の洗浄方法 |
JP2023020447A (ja) * | 2021-07-30 | 2023-02-09 | 国立大学法人東海国立大学機構 | Iii族窒化物半導体素子の製造方法 |
CN113897677B (zh) * | 2021-09-30 | 2023-04-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化铟晶体及其生长方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61260622A (ja) * | 1985-05-15 | 1986-11-18 | Res Dev Corp Of Japan | GaAs単結晶薄膜の成長法 |
JP3752810B2 (ja) * | 1997-11-26 | 2006-03-08 | 昭和電工株式会社 | エピタキシャルウェハおよびその製造方法並びに半導体素子 |
JP4214585B2 (ja) * | 1998-04-24 | 2009-01-28 | 富士ゼロックス株式会社 | 半導体デバイス、半導体デバイスの製造方法及び製造装置 |
JP3898575B2 (ja) * | 2002-06-12 | 2007-03-28 | ソニー株式会社 | GaInN層の成膜方法 |
US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
CN101443887B (zh) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
AU2007313096B2 (en) * | 2006-03-10 | 2011-11-10 | Unm Rainforest Innovations | Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices |
US20100163931A1 (en) | 2006-03-20 | 2010-07-01 | Kanagawa Academy Of Science And Technology | Group iii-v nitride layer and method for producing the same |
JP4888857B2 (ja) * | 2006-03-20 | 2012-02-29 | 国立大学法人徳島大学 | Iii族窒化物半導体薄膜およびiii族窒化物半導体発光素子 |
JP2007284305A (ja) * | 2006-04-18 | 2007-11-01 | Osaka Univ | 磁性を有するアルカリ土類金属窒化物とその製造方法 |
JP2008177523A (ja) * | 2006-12-20 | 2008-07-31 | Showa Denko Kk | Iii族窒化物化合物半導体発光素子の製造方法、及びiii族窒化物化合物半導体発光素子、並びにランプ |
JP2008177525A (ja) * | 2006-12-20 | 2008-07-31 | Showa Denko Kk | Iii族窒化物半導体発光素子の製造方法、及びiii族窒化物半導体発光素子、並びにランプ |
GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
CN101445956A (zh) * | 2007-11-28 | 2009-06-03 | 中国科学院半导体研究所 | 一种氮化物薄膜外延生长的方法 |
US20100038656A1 (en) * | 2008-08-04 | 2010-02-18 | Goldeneye | Nitride LEDs based on thick templates |
US8541817B2 (en) * | 2009-11-06 | 2013-09-24 | Nitek, Inc. | Multilayer barrier III-nitride transistor for high voltage electronics |
US8507365B2 (en) | 2009-12-21 | 2013-08-13 | Alliance For Sustainable Energy, Llc | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates |
JP2011198885A (ja) * | 2010-03-18 | 2011-10-06 | Mitsui Eng & Shipbuild Co Ltd | 原子層堆積装置及び原子層堆積方法 |
US8945305B2 (en) * | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
KR101883840B1 (ko) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 |
-
2013
- 2013-06-13 CN CN201380032385.3A patent/CN104471676B/zh not_active Expired - Fee Related
- 2013-06-13 JP JP2015517411A patent/JP2015525484A/ja active Pending
- 2013-06-13 US US13/916,724 patent/US9773666B2/en active Active
- 2013-06-13 WO PCT/US2013/045569 patent/WO2013192001A1/en active Application Filing
- 2013-06-13 EP EP13806353.2A patent/EP2862199A4/en not_active Withdrawn
- 2013-06-13 SG SG11201408484TA patent/SG11201408484TA/en unknown
-
2017
- 2017-09-07 US US15/698,344 patent/US11443942B2/en active Active
-
2020
- 2020-06-01 US US16/889,200 patent/US20200294792A1/en not_active Abandoned
-
2022
- 2022-08-03 US US17/879,825 patent/US20220406591A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2862199A1 (en) | 2015-04-22 |
US20200294792A1 (en) | 2020-09-17 |
US9773666B2 (en) | 2017-09-26 |
WO2013192001A1 (en) | 2013-12-27 |
CN104471676A (zh) | 2015-03-25 |
US11443942B2 (en) | 2022-09-13 |
US20180040472A1 (en) | 2018-02-08 |
CN104471676B (zh) | 2017-09-29 |
US20130334666A1 (en) | 2013-12-19 |
US20220406591A1 (en) | 2022-12-22 |
JP2015525484A (ja) | 2015-09-03 |
EP2862199A4 (en) | 2016-02-24 |
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