SG11201405586TA - Nozzle for stress-free polishing metal layers on semiconductor wafers - Google Patents

Nozzle for stress-free polishing metal layers on semiconductor wafers

Info

Publication number
SG11201405586TA
SG11201405586TA SG11201405586TA SG11201405586TA SG11201405586TA SG 11201405586T A SG11201405586T A SG 11201405586TA SG 11201405586T A SG11201405586T A SG 11201405586TA SG 11201405586T A SG11201405586T A SG 11201405586TA SG 11201405586T A SG11201405586T A SG 11201405586TA
Authority
SG
Singapore
Prior art keywords
nozzle
stress
metal layers
semiconductor wafers
polishing metal
Prior art date
Application number
SG11201405586TA
Other languages
English (en)
Inventor
Jian Wang
Yinuo Jin
Hui Wang
Original Assignee
Acm Res Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Res Shanghai Inc filed Critical Acm Res Shanghai Inc
Publication of SG11201405586TA publication Critical patent/SG11201405586TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C5/00—Devices or accessories for generating abrasive blasts
    • B24C5/02—Blast guns, e.g. for generating high velocity abrasive fluid jets for cutting materials
    • B24C5/04—Nozzles therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)
SG11201405586TA 2012-03-30 2012-03-30 Nozzle for stress-free polishing metal layers on semiconductor wafers SG11201405586TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/073300 WO2013143115A1 (en) 2012-03-30 2012-03-30 Nozzle for stress-free polishing metal layers on semiconductor wafers

Publications (1)

Publication Number Publication Date
SG11201405586TA true SG11201405586TA (en) 2015-06-29

Family

ID=49258103

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405586TA SG11201405586TA (en) 2012-03-30 2012-03-30 Nozzle for stress-free polishing metal layers on semiconductor wafers

Country Status (6)

Country Link
US (1) US9724803B2 (zh)
JP (1) JP6076458B2 (zh)
KR (1) KR101891730B1 (zh)
CN (1) CN104170064B (zh)
SG (1) SG11201405586TA (zh)
WO (1) WO2013143115A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104637862B (zh) * 2013-11-14 2019-10-18 盛美半导体设备（上海）有限公司 半导体结构形成方法
CN104802097B (zh) * 2015-04-15 2017-02-22 中国石油天然气股份有限公司 一种套管磨料射流切割喷射器
CN106555221B (zh) * 2015-09-25 2023-03-07 盛美半导体设备(上海)股份有限公司 喷头装置
CN108115471A (zh) * 2017-12-25 2018-06-05 哈工大机器人（合肥）国际创新研究院 一种手持式等离子抛光装置
CN114514341A (zh) * 2019-08-01 2022-05-17 德里莱特公司 用于借助于电活性固体颗粒对金属表面进行干式处理的方法和设备
CN111424308B (zh) * 2020-04-21 2020-12-22 山东中庆环保科技有限公司 一种电解液抛光泡沫去除装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2659667A1 (fr) * 1990-03-13 1991-09-20 Inst Prikladnoi Fiziki Akademi Dispositif pour le traitement de la surface interieure d'un article.
US5157876A (en) * 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
JPH06285720A (ja) 1993-04-02 1994-10-11 Mitsubishi Heavy Ind Ltd 電解研磨装置及び該装置に用いる電解研磨ノズル
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US6248222B1 (en) 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
JP2002110592A (ja) 2000-09-27 2002-04-12 Sony Corp 研磨方法および研磨装置
JP2003255479A (ja) 2002-03-06 2003-09-10 Fuji Photo Film Co Ltd シート取出方法および装置
KR101149346B1 (ko) * 2004-06-28 2012-05-30 램 리써치 코포레이션 스트레스 없는 버프용 방법 및 시스템
WO2006110864A2 (en) 2005-04-12 2006-10-19 Acm Research, Inc. Method for improving surface roughness during electro-polishing
US7837850B2 (en) * 2005-09-28 2010-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating systems and methods
KR101105699B1 (ko) * 2010-10-08 2012-01-17 주식회사 엘지실트론 웨이퍼 연마 장치

Also Published As

Publication number Publication date
KR20140141693A (ko) 2014-12-10
US9724803B2 (en) 2017-08-08
JP6076458B2 (ja) 2017-02-08
WO2013143115A1 (en) 2013-10-03
JP2015518273A (ja) 2015-06-25
KR101891730B1 (ko) 2018-08-24
US20150072599A1 (en) 2015-03-12
CN104170064A (zh) 2014-11-26
CN104170064B (zh) 2017-05-10

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