SG11201403340WA - Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell - Google Patents

Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell

Info

Publication number
SG11201403340WA
SG11201403340WA SG11201403340WA SG11201403340WA SG11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA
Authority
SG
Singapore
Prior art keywords
solar cell
junction solar
producing
semifinished product
junction
Prior art date
Application number
SG11201403340WA
Other languages
English (en)
Inventor
Daniel Fuhrmann
Original Assignee
Azur Space Solar Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azur Space Solar Power Gmbh filed Critical Azur Space Solar Power Gmbh
Publication of SG11201403340WA publication Critical patent/SG11201403340WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
SG11201403340WA 2012-01-20 2013-01-14 Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell SG11201403340WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12000386.8A EP2618385A1 (fr) 2012-01-20 2012-01-20 Demi-produit d'une cellule solaire multiple et procédé de fabrication d'une cellule solaire multiple
PCT/EP2013/000096 WO2013107628A2 (fr) 2012-01-20 2013-01-14 Produit semi-fini d'une cellule solaire multijonction et procédé de fabrication d'une cellule solaire multijonction

Publications (1)

Publication Number Publication Date
SG11201403340WA true SG11201403340WA (en) 2014-09-26

Family

ID=47666077

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403340WA SG11201403340WA (en) 2012-01-20 2013-01-14 Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell

Country Status (6)

Country Link
US (1) US9666738B2 (fr)
EP (2) EP2618385A1 (fr)
JP (1) JP5893170B2 (fr)
CN (1) CN104054188B (fr)
SG (1) SG11201403340WA (fr)
WO (1) WO2013107628A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831363B2 (en) * 2014-06-19 2017-11-28 John Farah Laser epitaxial lift-off of high efficiency solar cell
WO2015120169A1 (fr) 2014-02-05 2015-08-13 Solar Junction Corporation Convertisseur de puissance monolithique à jonctions multiples
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
DE102016001386A1 (de) 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
WO2019067553A1 (fr) 2017-09-27 2019-04-04 Solar Junction Corporation Dispositifs optoélectroniques à infrarouge à courte longueur d'onde comportant une couche de nitrure dilué
DE102018002426A1 (de) * 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
US11742508B2 (en) 2018-11-30 2023-08-29 ExxonMobil Technology and Engineering Company Reforming catalyst pattern for fuel cell operated with enhanced CO2 utilization
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
US11658256B2 (en) 2019-12-16 2023-05-23 Solaero Technologies Corp. Multijunction solar cells
US11362230B1 (en) 2021-01-28 2022-06-14 Solaero Technologies Corp. Multijunction solar cells

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JPS62171167A (ja) 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE19649594A1 (de) 1996-11-29 1998-06-04 Deutsche Telekom Ag Optisches Impulsreflektometer
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP3856750B2 (ja) * 2001-11-13 2006-12-13 松下電器産業株式会社 半導体装置及びその製造方法
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
WO2004054003A1 (fr) * 2002-12-05 2004-06-24 Blue Photonics, Inc. Piles solaires multijonctions, monolithiques, a efficacite elevee, contenant des materiaux a reseaux non apparies et procedes de formation associes
CN1938866A (zh) * 2004-03-31 2007-03-28 罗姆股份有限公司 叠层型薄膜太阳能电池及其制造方法
DE102005047152A1 (de) 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
US8022292B2 (en) * 2006-10-02 2011-09-20 SolASE Corporation Photovoltaic device employing a resonator cavity
DE102008019268A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN102177572A (zh) 2008-10-10 2011-09-07 奥塔装置公司 用于外延剥离的台面蚀刻方法和组成
US7785989B2 (en) 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
SG176276A1 (en) * 2009-07-17 2012-01-30 Soitec Silicon On Insulator Method of bonding using a bonding layer based on zinc, silicon and oxygen and corresponding structures
JP2011124946A (ja) * 2009-12-14 2011-06-23 Panasonic Corp 固体撮像素子およびこれを備えたカメラ
KR101460086B1 (ko) * 2009-12-15 2014-11-10 소이텍 기판의 재활용 공정
FR2954002B1 (fr) * 2009-12-16 2013-01-18 Emcore Solar Power Inc Procede pour la production de cellules solaires multijonction metamorphiques inversees
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Also Published As

Publication number Publication date
CN104054188A (zh) 2014-09-17
JP2015505641A (ja) 2015-02-23
US9666738B2 (en) 2017-05-30
EP2805357A2 (fr) 2014-11-26
WO2013107628A2 (fr) 2013-07-25
JP5893170B2 (ja) 2016-03-23
CN104054188B (zh) 2017-03-08
EP2805357B1 (fr) 2018-10-24
US20140326300A1 (en) 2014-11-06
WO2013107628A3 (fr) 2013-11-07
EP2618385A1 (fr) 2013-07-24

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