SG11201401557UA - Crucible and method for the production of a (near) monocrystalline semiconductor ingot - Google Patents

Crucible and method for the production of a (near) monocrystalline semiconductor ingot

Info

Publication number
SG11201401557UA
SG11201401557UA SG11201401557UA SG11201401557UA SG11201401557UA SG 11201401557U A SG11201401557U A SG 11201401557UA SG 11201401557U A SG11201401557U A SG 11201401557UA SG 11201401557U A SG11201401557U A SG 11201401557UA SG 11201401557U A SG11201401557U A SG 11201401557UA
Authority
SG
Singapore
Prior art keywords
crucible
production
monocrystalline semiconductor
semiconductor ingot
ingot
Prior art date
Application number
SG11201401557UA
Other languages
English (en)
Inventor
Gilbert Rancoule
Christian Martin
Original Assignee
Vesuvius France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=47088904&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201401557U(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Vesuvius France Sa filed Critical Vesuvius France Sa
Publication of SG11201401557UA publication Critical patent/SG11201401557UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
SG11201401557UA 2011-11-04 2012-11-02 Crucible and method for the production of a (near) monocrystalline semiconductor ingot SG11201401557UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11187970.6A EP2589687A1 (en) 2011-11-04 2011-11-04 Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
PCT/EP2012/071711 WO2013064626A1 (en) 2011-11-04 2012-11-02 Crucible and method for the production of a (near) monocrystalline semiconductor ingot

Publications (1)

Publication Number Publication Date
SG11201401557UA true SG11201401557UA (en) 2014-07-30

Family

ID=47088904

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401557UA SG11201401557UA (en) 2011-11-04 2012-11-02 Crucible and method for the production of a (near) monocrystalline semiconductor ingot

Country Status (8)

Country Link
EP (2) EP2589687A1 (ko)
KR (1) KR20140091730A (ko)
CN (1) CN104040038B (ko)
ES (1) ES2547684T3 (ko)
SG (1) SG11201401557UA (ko)
TW (1) TWI545234B (ko)
UA (1) UA112879C2 (ko)
WO (1) WO2013064626A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100147A1 (de) * 2012-01-10 2012-12-13 Schott Solar Ag Verfahren zur Herstellung von mono-, quasimono- oder multikristallinen Metall- oder Halbmetallkörpern
CN104711671B (zh) * 2013-12-11 2017-08-25 徐州协鑫太阳能材料有限公司 坩埚涂层结构、制备方法及坩埚
DE102014207149A1 (de) 2014-04-14 2015-10-29 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium
FR3026414B1 (fr) * 2014-09-26 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Creuset pour la cristallisation de silicium multi-cristallin ou quasi-monocristallin par reprise sur germe
TWI593838B (zh) * 2016-08-04 2017-08-01 中美矽晶製品股份有限公司 晶種的鋪設方法及類單晶晶錠之製作方法
CN107916451B (zh) * 2017-12-15 2019-04-02 江苏润弛太阳能材料科技有限公司 一种铸造多晶硅免喷坩埚
CN108046846B (zh) * 2017-12-15 2019-02-19 江苏润弛太阳能材料科技有限公司 一种铸造多晶硅免喷坩埚涂层及其制备方法
CN113166968A (zh) * 2018-12-14 2021-07-23 环球晶圆股份有限公司 包含具有用于升华固体掺杂物的多孔分隔构件的掺杂导管的铸锭拉晶设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2009459A1 (de) 1970-02-28 1971-09-09 Consortium Elektrochem Ind Verfahren zur Herstellung von Sihciumformkorpern
FR2175594B1 (ko) 1972-03-15 1974-09-13 Radiotechnique Compelec
IT1137729B (it) * 1981-07-20 1986-09-10 Heliosil Spa Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari
JPS6144793A (ja) 1984-08-09 1986-03-04 Toshiba Ceramics Co Ltd シリコン単結晶引上げ用石英ガラスルツボ
DE69912668T2 (de) * 1998-02-26 2004-09-30 Mitsubishi Materials Corp. Kokille und Verfahren zur Herstellung von Siliziumstäben
JP4444559B2 (ja) 2002-10-09 2010-03-31 ジャパンスーパークォーツ株式会社 石英ガラスルツボの強化方法とシリコン単結晶の引き上げ方法
US20040211496A1 (en) * 2003-04-25 2004-10-28 Crystal Systems, Inc. Reusable crucible for silicon ingot growth
US7867334B2 (en) 2004-03-29 2011-01-11 Kyocera Corporation Silicon casting apparatus and method of producing silicon ingot
EP1739209A1 (en) * 2005-07-01 2007-01-03 Vesuvius Crucible Company Crucible for the crystallization of silicon
US7344596B2 (en) 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
WO2008026688A1 (fr) 2006-08-30 2008-03-06 Kyocera Corporation Procédé de formation d'un moule pour la production d'un lingot de silicium, procédé de production d'un substrat pour élément de cellule solaire, procédé de production d'un élément de cellule solaire et moule pour la production d'un lingot de silicium
JP2008088045A (ja) 2006-09-05 2008-04-17 Sumco Corp シリコン単結晶の製造方法およびシリコンウェーハの製造方法
FR2908125B1 (fr) 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
US20100203350A1 (en) * 2007-07-20 2010-08-12 Bp Corporation Noth America Inc. Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
DE102007038851A1 (de) 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
DE102007053284A1 (de) 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
RU2011101453A (ru) 2008-06-16 2012-07-27 ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) Системы и способы выращивания монокристаллических кремниевых слитков путем направленного отверждения
WO2010088046A1 (en) * 2009-01-30 2010-08-05 Bp Corporation North America Inc. Seed layers and process of manufacturing seed layers
JP5293615B2 (ja) 2010-01-08 2013-09-18 信越半導体株式会社 単結晶製造装置
JP5480036B2 (ja) 2010-03-03 2014-04-23 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
TWI534307B (zh) 2010-06-15 2016-05-21 中美矽晶製品股份有限公司 製造矽晶鑄錠之方法

Also Published As

Publication number Publication date
EP2773797A1 (en) 2014-09-10
EP2773797B1 (en) 2015-08-05
CN104040038B (zh) 2016-11-02
CN104040038A (zh) 2014-09-10
WO2013064626A1 (en) 2013-05-10
TW201331429A (zh) 2013-08-01
UA112879C2 (uk) 2016-11-10
TWI545234B (zh) 2016-08-11
ES2547684T3 (es) 2015-10-08
KR20140091730A (ko) 2014-07-22
EP2589687A1 (en) 2013-05-08

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