SG11201401263PA - Method for manufacturing single-crystal silicon - Google Patents

Method for manufacturing single-crystal silicon

Info

Publication number
SG11201401263PA
SG11201401263PA SG11201401263PA SG11201401263PA SG11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA
Authority
SG
Singapore
Prior art keywords
crystal silicon
manufacturing single
manufacturing
silicon
crystal
Prior art date
Application number
SG11201401263PA
Other languages
English (en)
Inventor
Hideo Kato
Shinichi Kyufu
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201401263PA publication Critical patent/SG11201401263PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201401263PA 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon SG11201401263PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011283330A JP5509188B2 (ja) 2011-12-26 2011-12-26 単結晶シリコンの製造方法
PCT/EP2012/063494 WO2013097953A1 (en) 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon

Publications (1)

Publication Number Publication Date
SG11201401263PA true SG11201401263PA (en) 2014-08-28

Family

ID=46466580

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401263PA SG11201401263PA (en) 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon

Country Status (7)

Country Link
US (1) US9702055B2 (ja)
EP (1) EP2798102A1 (ja)
JP (1) JP5509188B2 (ja)
KR (1) KR101620770B1 (ja)
CN (1) CN104011271B (ja)
SG (1) SG11201401263PA (ja)
WO (1) WO2013097953A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109477239A (zh) * 2016-09-23 2019-03-15 胜高股份有限公司 石英玻璃坩埚及其制造方法以及使用了石英玻璃坩埚的单晶硅的制造方法
JP6743753B2 (ja) * 2017-04-27 2020-08-19 株式会社Sumco シリコン単結晶の引上げ方法
CN107460538B (zh) * 2017-07-19 2019-02-01 内蒙古中环光伏材料有限公司 一种提高复投单晶硅成晶率的方法
CN109056055B (zh) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 一种单晶硅棒的生产方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP2000247788A (ja) 1999-02-26 2000-09-12 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
EP1199387B1 (en) * 2000-02-22 2011-09-21 Shin-Etsu Handotai Co., Ltd. Method for growing single crystal of semiconductor
WO2002014587A1 (fr) * 2000-08-15 2002-02-21 Shin-Etsu Handotai Co., Ltd. Creuset en quartz et procede de fabrication d'un monocristal
US6641663B2 (en) * 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
JP4004783B2 (ja) * 2001-11-26 2007-11-07 シルトロニック・ジャパン株式会社 単結晶成長用石英ルツボ
JP4427775B2 (ja) 2002-03-29 2010-03-10 ジャパンスーパークォーツ株式会社 表面改質石英ガラスルツボとその表面改質方法
JP2005145731A (ja) * 2003-11-12 2005-06-09 Kuramoto Seisakusho Co Ltd 結晶化石英ルツボ
JP4517953B2 (ja) * 2005-06-22 2010-08-04 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US7427327B2 (en) 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
JP4986452B2 (ja) * 2005-12-28 2012-07-25 シルトロニック・ジャパン株式会社 シリコン単結晶の製造方法および製造装置
TWI408259B (zh) * 2006-09-28 2013-09-11 Shinetsu Quartz Prod 具有鋇摻雜內壁的矽玻璃坩堝
JP2010030867A (ja) * 2008-07-31 2010-02-12 Sumco Corp シリコン単結晶の育成方法
US20120006254A1 (en) 2009-02-10 2012-01-12 Masaru Fujishiro Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon
EP2431338B1 (en) * 2009-04-28 2021-08-25 Shin-Etsu Quartz Products Co., Ltd. Silica vessel

Also Published As

Publication number Publication date
KR20140097425A (ko) 2014-08-06
CN104011271B (zh) 2017-11-07
US20150040820A1 (en) 2015-02-12
US9702055B2 (en) 2017-07-11
CN104011271A (zh) 2014-08-27
WO2013097953A1 (en) 2013-07-04
JP5509188B2 (ja) 2014-06-04
EP2798102A1 (en) 2014-11-05
KR101620770B1 (ko) 2016-05-12
JP2013133243A (ja) 2013-07-08

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