SG109012A1 - Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device and method for producing the same - Google Patents

Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device and method for producing the same

Info

Publication number
SG109012A1
SG109012A1 SG200404511A SG200404511A SG109012A1 SG 109012 A1 SG109012 A1 SG 109012A1 SG 200404511 A SG200404511 A SG 200404511A SG 200404511 A SG200404511 A SG 200404511A SG 109012 A1 SG109012 A1 SG 109012A1
Authority
SG
Singapore
Prior art keywords
producing
positive
same
display device
semiconductor device
Prior art date
Application number
SG200404511A
Other languages
English (en)
Inventor
Banba Toshio
Hirano Takashi
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of SG109012A1 publication Critical patent/SG109012A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/42—Polyamides containing atoms other than carbon, hydrogen, oxygen, and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Polyamides (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200404511A 2003-08-06 2004-08-04 Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device and method for producing the same SG109012A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288221 2003-08-06

Publications (1)

Publication Number Publication Date
SG109012A1 true SG109012A1 (en) 2005-02-28

Family

ID=34114037

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200404511A SG109012A1 (en) 2003-08-06 2004-08-04 Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device and method for producing the same

Country Status (6)

Country Link
US (1) US7368205B2 (fr)
EP (1) EP1513014A3 (fr)
KR (1) KR20050016162A (fr)
CN (2) CN101928396A (fr)
SG (1) SG109012A1 (fr)
TW (1) TW200512543A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2006235230B8 (en) 2005-04-07 2010-08-26 Chata Biosystems, Inc. Flow path conditioner system
JPWO2009014113A1 (ja) * 2007-07-26 2010-10-07 住友ベークライト株式会社 スプレー塗布用ポジ型感光性樹脂組成物、それを用いた硬化膜の形成方法、硬化膜および半導体装置
US20100249166A1 (en) 2007-09-19 2010-09-30 Xy, Inc. Differential evaporation potentiated disinfectant system
US8119688B2 (en) * 2007-09-19 2012-02-21 Xy, Llc Differential evaporation potentiated disinfectant system
TW200927832A (en) * 2007-10-16 2009-07-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
KR101584385B1 (ko) * 2008-05-07 2016-01-11 스미또모 베이크라이트 가부시키가이샤 포지티브형 감광성 수지 조성물, 경화막, 보호막 및 절연막, 및 이를 이용한 반도체 장치 및 표시체 장치
JP5410918B2 (ja) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド ポジティブ型感光性樹脂組成物
KR101413078B1 (ko) 2011-12-30 2014-07-02 제일모직 주식회사 포지티브형 감광성 수지 조성물
JP5494897B1 (ja) * 2012-09-14 2014-05-21 東レ株式会社 ポリアミド樹脂組成物、成形品
US20140234532A1 (en) * 2013-02-15 2014-08-21 Sumitomo Bakelite Co., Ltd. Laminated composite material for producing display element, optical element, or illumination element
KR102176074B1 (ko) * 2013-04-15 2020-11-09 아크론 폴리머 시스템즈, 인코포레이티드 디스플레이용 소자, 광학용 소자, 또는 조명용 소자의 제조를 위한 방향족 폴리아미드 용액
EP3491047B1 (fr) * 2016-07-28 2021-09-15 3M Innovative Properties Company Blocs copolymères silicone polyamide segmentés et articles contenant ces blocs copolymères

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
EP0291779B1 (fr) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
JPS6446862A (en) 1987-08-18 1989-02-21 Fujitsu Ltd Bus controller
EP0373952B1 (fr) * 1988-12-16 1995-02-08 Hitachi Chemical Co., Ltd. Composition résineuse photosensible et élément photosensible utilisant cette composition
KR950011927B1 (ko) * 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
DE4028515C2 (de) * 1990-09-07 2000-11-30 Siemens Ag Resists auf der Basis von oligomeren und/oder polymeren Polybenzoxazol-Vorstufen
EP0478321B1 (fr) * 1990-09-28 1997-11-12 Kabushiki Kaisha Toshiba Composition résineuse photosensible pour la structuration d'un film de polyimide et méthode pour structurer un film de polyimide
US5472823A (en) * 1992-01-20 1995-12-05 Hitachi Chemical Co., Ltd. Photosensitive resin composition
JP2674415B2 (ja) * 1992-01-27 1997-11-12 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JP2787531B2 (ja) * 1993-02-17 1998-08-20 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JPH08254831A (ja) * 1995-03-15 1996-10-01 Shin Etsu Chem Co Ltd 感光性ポリイミド系樹脂組成物
JPH09118825A (ja) * 1995-10-24 1997-05-06 Shin Etsu Chem Co Ltd ポリイミド樹脂組成物
TW502135B (en) * 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
US6207356B1 (en) * 1996-12-31 2001-03-27 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
JP4330798B2 (ja) * 1998-04-15 2009-09-16 旭化成イーマテリアルズ株式会社 ポジ型レジスト組成物
US6127086A (en) * 1998-10-01 2000-10-03 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
US6143467A (en) * 1998-10-01 2000-11-07 Arch Specialty Chemicals, Inc. Photosensitive polybenzoxazole precursor compositions
US6177225B1 (en) * 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
DE60142844D1 (de) * 2000-10-31 2010-09-30 Intel Corp Positive lichtempfindliche harzzusammensetzung, prozess zu ihrer herstellung und halbleiterbauelemente
US6670090B1 (en) * 2002-09-03 2003-12-30 Industrial Technology Research Institute Positive working photosensitive composition, article and process for forming a relief pattern

Also Published As

Publication number Publication date
US7368205B2 (en) 2008-05-06
CN101928396A (zh) 2010-12-29
US20050031994A1 (en) 2005-02-10
CN1609133A (zh) 2005-04-27
TW200512543A (en) 2005-04-01
KR20050016162A (ko) 2005-02-21
EP1513014A3 (fr) 2005-11-23
EP1513014A2 (fr) 2005-03-09

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