SG108263A1 - Integrated power oscillator rf source for plasma immersion ion implantation system - Google Patents

Integrated power oscillator rf source for plasma immersion ion implantation system

Info

Publication number
SG108263A1
SG108263A1 SG200104422A SG200104422A SG108263A1 SG 108263 A1 SG108263 A1 SG 108263A1 SG 200104422 A SG200104422 A SG 200104422A SG 200104422 A SG200104422 A SG 200104422A SG 108263 A1 SG108263 A1 SG 108263A1
Authority
SG
Singapore
Prior art keywords
source
ion implantation
integrated power
implantation system
plasma immersion
Prior art date
Application number
SG200104422A
Other languages
English (en)
Inventor
Frank Divergilio William
Lawrence Kellerman Peter
Thomas Ryan Kevin
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG108263A1 publication Critical patent/SG108263A1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electron Sources, Ion Sources (AREA)
SG200104422A 2000-07-20 2001-07-20 Integrated power oscillator rf source for plasma immersion ion implantation system SG108263A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/619,839 US6305316B1 (en) 2000-07-20 2000-07-20 Integrated power oscillator RF source of plasma immersion ion implantation system

Publications (1)

Publication Number Publication Date
SG108263A1 true SG108263A1 (en) 2005-01-28

Family

ID=24483518

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200104422A SG108263A1 (en) 2000-07-20 2001-07-20 Integrated power oscillator rf source for plasma immersion ion implantation system

Country Status (6)

Country Link
US (1) US6305316B1 (ja)
EP (1) EP1174901A3 (ja)
JP (1) JP2002151429A (ja)
KR (1) KR20020011075A (ja)
SG (1) SG108263A1 (ja)
TW (1) TW494711B (ja)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19900179C1 (de) * 1999-01-07 2000-02-24 Bosch Gmbh Robert Plasmaätzanlage
US6452196B1 (en) * 1999-12-20 2002-09-17 Axcelis Technologies, Inc. Power supply hardening for ion beam systems
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7132996B2 (en) * 2001-10-09 2006-11-07 Plasma Control Systems Llc Plasma production device and method and RF driver circuit
US7100532B2 (en) * 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7084832B2 (en) * 2001-10-09 2006-08-01 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
JP3897620B2 (ja) * 2002-03-14 2007-03-28 三菱重工業株式会社 高周波電力供給構造およびそれを備えたプラズマｃｖｄ装置
KR20060029621A (ko) * 2003-06-19 2006-04-06 플라즈마 컨트롤 시스템 엘엘씨 듀티 싸이클이 조절가능한 플라즈마 생성 장치 및 방법과고주파 구동 회로
US7748344B2 (en) * 2003-11-06 2010-07-06 Axcelis Technologies, Inc. Segmented resonant antenna for radio frequency inductively coupled plasmas
US7421973B2 (en) * 2003-11-06 2008-09-09 Axcelis Technologies, Inc. System and method for performing SIMOX implants using an ion shower
US7157857B2 (en) * 2003-12-19 2007-01-02 Advanced Energy Industries, Inc. Stabilizing plasma and generator interactions
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7459899B2 (en) 2005-11-21 2008-12-02 Thermo Fisher Scientific Inc. Inductively-coupled RF power source
US8932430B2 (en) * 2011-05-06 2015-01-13 Axcelis Technologies, Inc. RF coupled plasma abatement system comprising an integrated power oscillator
WO2009146439A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma
US9288886B2 (en) 2008-05-30 2016-03-15 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US7897945B2 (en) * 2008-09-25 2011-03-01 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
US8692466B2 (en) * 2009-02-27 2014-04-08 Mks Instruments Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
US8674606B2 (en) * 2009-04-27 2014-03-18 Advanced Energy Industries, Inc. Detecting and preventing instabilities in plasma processes
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP2013529352A (ja) 2010-03-31 2013-07-18 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
CA2794902A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
CN102740580B (zh) * 2012-06-27 2015-08-19 华东师范大学 一种小功率集成微波微等离子体源
JP2014049362A (ja) * 2012-09-03 2014-03-17 Tokyo Electron Ltd プラズマ発生装置および基板処理装置
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
CN108353493B (zh) * 2016-01-22 2020-05-19 Spp科技股份有限公司 等离子体控制装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832648A (en) * 1973-05-29 1974-08-27 Dowell R Mc Radio frequency power generator utilizing non-magnetic slug tuned coils and impedance matching network for use therewith
US3958883A (en) * 1974-07-10 1976-05-25 Baird-Atomic, Inc. Radio frequency induced plasma excitation of optical emission spectroscopic samples
US4667111A (en) * 1985-05-17 1987-05-19 Eaton Corporation Accelerator for ion implantation
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
US5643364A (en) * 1994-11-30 1997-07-01 Applied Materials, Inc. Plasma chamber with fixed RF matching
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
US5942855A (en) * 1996-08-28 1999-08-24 Northeastern University Monolithic miniaturized inductively coupled plasma source
US6027601A (en) * 1997-07-01 2000-02-22 Applied Materials, Inc Automatic frequency tuning of an RF plasma source of an inductively coupled plasma reactor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460589A1 (fr) * 1979-07-04 1981-01-23 Instruments Sa Generateur de plasma
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
JP3167221B2 (ja) * 1992-05-07 2001-05-21 ザ・パーキン・エルマー・コーポレイション 誘導結合プラズマ発生器
GB9714341D0 (en) * 1997-07-09 1997-09-10 Surface Tech Sys Ltd Plasma processing apparatus
US6168690B1 (en) * 1997-09-29 2001-01-02 Lam Research Corporation Methods and apparatus for physical vapor deposition
JPH11145148A (ja) * 1997-11-06 1999-05-28 Tdk Corp 熱プラズマアニール装置およびアニール方法
JP3840821B2 (ja) * 1998-11-30 2006-11-01 株式会社日立製作所 プラズマ処理装置
EP1144717A4 (en) * 1998-12-01 2003-04-16 Silicon Genesis Corp IMPROVED PLASMA ION IMPLANTATION PLASMA METHOD, METHOD AND SYSTEM
JP4672941B2 (ja) * 1999-07-13 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマを発生させるための高周波電源

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832648A (en) * 1973-05-29 1974-08-27 Dowell R Mc Radio frequency power generator utilizing non-magnetic slug tuned coils and impedance matching network for use therewith
US3958883A (en) * 1974-07-10 1976-05-25 Baird-Atomic, Inc. Radio frequency induced plasma excitation of optical emission spectroscopic samples
US4667111A (en) * 1985-05-17 1987-05-19 Eaton Corporation Accelerator for ion implantation
US4667111C1 (en) * 1985-05-17 2001-04-10 Eaton Corp Cleveland Accelerator for ion implantation
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
US5643364A (en) * 1994-11-30 1997-07-01 Applied Materials, Inc. Plasma chamber with fixed RF matching
US5942855A (en) * 1996-08-28 1999-08-24 Northeastern University Monolithic miniaturized inductively coupled plasma source
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
US6027601A (en) * 1997-07-01 2000-02-22 Applied Materials, Inc Automatic frequency tuning of an RF plasma source of an inductively coupled plasma reactor

Also Published As

Publication number Publication date
KR20020011075A (ko) 2002-02-07
US6305316B1 (en) 2001-10-23
EP1174901A2 (en) 2002-01-23
JP2002151429A (ja) 2002-05-24
TW494711B (en) 2002-07-11
EP1174901A3 (en) 2004-09-15

Similar Documents

Publication Publication Date Title
SG108263A1 (en) Integrated power oscillator rf source for plasma immersion ion implantation system
GB0023701D0 (en) High-frequency ion source
SG93918A1 (en) Pretreatment process for plasma immersion ion implantation
GB2389451B (en) Improvements in ion sources for ion implantation apparatus
EP1348228A4 (en) SOURCE OF IONS
GB2348738B (en) Plasma source and ion implanting apparatus using the same
EP1305604A4 (en) PLASMA SOURCE FOR SPECTROMETRY
AU773889C (en) Power system for sterilization systems employing low frequency plasma
GB2378313B (en) Ion implantation apparatus capable of increasing beam current
SG86444A1 (en) Decaborane ion source
IL156644A0 (en) Low contamination plasma chamber components and methods for making the same
TW590318U (en) Continuously variable aperture for high-energy ion implanter
GB9922837D0 (en) Modified ion source targets for use in liquid maldi ms
GB2378038B (en) Ion source vaporizer
SG75955A1 (en) Improved multi-cusp ion source
AU3926901A (en) High frequency plasma source
GB2375226B (en) Ion implantation apparatus suited for low energy ion implantation and tuning method therefor
GB9908953D0 (en) Ion implanter
GB2347786B (en) Ion implantation method
GB0109094D0 (en) Plasma source
GB2387266B (en) Ion Source
GB2389456B (en) Radio frequency ion source
GB0024563D0 (en) Ion source assembly
SG88808A1 (en) Quartz insulator for ion implanter beamline components
AU2001237845A1 (en) Plasma ion source and method