SG102675A1 - A method to form a low parasitic capacitance pseudo-soi cmos device - Google Patents

A method to form a low parasitic capacitance pseudo-soi cmos device

Info

Publication number
SG102675A1
SG102675A1 SG200202077A SG200202077A SG102675A1 SG 102675 A1 SG102675 A1 SG 102675A1 SG 200202077 A SG200202077 A SG 200202077A SG 200202077 A SG200202077 A SG 200202077A SG 102675 A1 SG102675 A1 SG 102675A1
Authority
SG
Singapore
Prior art keywords
pseudo
parasitic capacitance
cmos device
low parasitic
soi cmos
Prior art date
Application number
SG200202077A
Other languages
English (en)
Inventor
Quek Elgin
Sundaresan Ravi
Pan Yang
Lee Yong Meng James
Ying Keung Leung
Ramachandramurthy Pr Yelehanka
Zhen Zheng Jia
Chan Lap
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG102675A1 publication Critical patent/SG102675A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG200202077A 2001-05-02 2002-04-09 A method to form a low parasitic capacitance pseudo-soi cmos device SG102675A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/846,177 US6403485B1 (en) 2001-05-02 2001-05-02 Method to form a low parasitic capacitance pseudo-SOI CMOS device

Publications (1)

Publication Number Publication Date
SG102675A1 true SG102675A1 (en) 2004-03-26

Family

ID=25297155

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200202077A SG102675A1 (en) 2001-05-02 2002-04-09 A method to form a low parasitic capacitance pseudo-soi cmos device

Country Status (4)

Country Link
US (1) US6403485B1 (de)
EP (1) EP1255290A3 (de)
JP (1) JP2003008012A (de)
SG (1) SG102675A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
JP2003243528A (ja) * 2002-02-13 2003-08-29 Toshiba Corp 半導体装置
US20040110351A1 (en) * 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
US6734070B1 (en) * 2003-03-17 2004-05-11 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device with field-effect transistors having shallow source and drain junctions
CN100435282C (zh) * 2003-03-18 2008-11-19 华邦电子股份有限公司 闪存浮动栅极的制造方法
US7273794B2 (en) 2003-12-11 2007-09-25 International Business Machines Corporation Shallow trench isolation fill by liquid phase deposition of SiO2
DE102004004846B4 (de) * 2004-01-30 2006-06-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Abscheiden einer Schicht aus einem Material auf einem Substrat
CN100479188C (zh) * 2004-07-09 2009-04-15 北京大学 一种体硅mos晶体管的制作方法
US7186662B2 (en) * 2004-10-13 2007-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a hard mask for gate electrode patterning and corresponding device
US7244659B2 (en) * 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
US7701058B2 (en) 2007-01-26 2010-04-20 International Business Machines Corporation Undoped polysilicon metal silicide wiring
US7989322B2 (en) 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
DE102008006960B4 (de) * 2008-01-31 2009-11-26 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit selbstjustierter Kontaktstruktur und Verfahren zur Herstellung
JP5083112B2 (ja) * 2008-08-07 2012-11-28 ローム株式会社 半導体装置
US8367508B2 (en) 2010-04-09 2013-02-05 International Business Machines Corporation Self-aligned contacts for field effect transistor devices
US10793427B2 (en) 2017-04-04 2020-10-06 Kionix, Inc. Eutectic bonding with AlGe
US10167191B2 (en) 2017-04-04 2019-01-01 Kionix, Inc. Method for manufacturing a micro electro-mechanical system
US10053360B1 (en) * 2017-08-11 2018-08-21 Kionix, Inc. Pseudo SOI process
US11313877B2 (en) 2018-06-19 2022-04-26 Kionix, Inc. Near-zero power wakeup electro-mechanical system
CN109545785B (zh) * 2018-10-31 2023-01-31 上海集成电路研发中心有限公司 一种半导体器件结构和制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286536A (ja) 1990-04-03 1991-12-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6200871B1 (en) * 1994-08-30 2001-03-13 Texas Instruments Incorporated High performance self-aligned silicide process for sub-half-micron semiconductor technologies
US5683924A (en) * 1994-10-31 1997-11-04 Sgs-Thomson Microelectronics, Inc. Method of forming raised source/drain regions in a integrated circuit
US5731239A (en) * 1997-01-22 1998-03-24 Chartered Semiconductor Manufacturing Pte Ltd. Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
US6015740A (en) 1997-02-10 2000-01-18 Advanced Micro Devices, Inc. Method of fabricating CMOS devices with ultra-shallow junctions and reduced drain area
US5843826A (en) 1997-06-03 1998-12-01 United Microeletronics Corp. Deep submicron MOSFET device
US6143613A (en) * 1997-06-30 2000-11-07 Vlsi Technology, Inc. Selective exclusion of silicide formation to make polysilicon resistors
US5827768A (en) 1997-07-07 1998-10-27 National Science Council Method for manufacturing an MOS transistor having a self-aligned and planarized raised source/drain structure
US6001697A (en) 1998-03-24 1999-12-14 Mosel Vitelic Inc. Process for manufacturing semiconductor devices having raised doped regions
US6083798A (en) * 1998-05-26 2000-07-04 Advanced Micro Devices, Inc. Method of producing a metal oxide semiconductor device with raised source/drain
US5915199A (en) * 1998-06-04 1999-06-22 Sharp Microelectronics Technology, Inc. Method for manufacturing a CMOS self-aligned strapped interconnection
US6239472B1 (en) * 1998-09-01 2001-05-29 Philips Electronics North America Corp. MOSFET structure having improved source/drain junction performance
US6093628A (en) * 1998-10-01 2000-07-25 Chartered Semiconductor Manufacturing, Ltd Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application
US6211026B1 (en) * 1998-12-01 2001-04-03 Micron Technology, Inc. Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
JP4193097B2 (ja) * 2002-02-18 2008-12-10 日本電気株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP1255290A2 (de) 2002-11-06
US6403485B1 (en) 2002-06-11
EP1255290A3 (de) 2007-02-21
JP2003008012A (ja) 2003-01-10

Similar Documents

Publication Publication Date Title
SG102675A1 (en) A method to form a low parasitic capacitance pseudo-soi cmos device
SG103359A1 (en) A method to form a self-aligned cmos inverter using vertical device integration
EP1189150A4 (de) Vorrichtung zum extrahieren von schlüsselwörtern
EP1477245A4 (de) Vorrichtung zum sequenziellen formen
EP1195782A4 (de) Kapazität
GB2385132A8 (en) A capacitance sensor
IL155946A0 (en) Capacitor
EP1258893A4 (de) Chipkondensator
GB2377287B (en) Improvements relating to internet-connected devices
EP1312122A4 (de) Integrierte transistorvorrichtung
SG102650A1 (en) Method to form self-aligned source/drain cmos device on isulated staircase oxide
AU2002348758A1 (en) A circuit to charge a capacitor
GB2382531B (en) A device to produce a vapour
AU2003288907A1 (en) A single device equivalent to cmos
AU2002358568A1 (en) Device for a walking aid
SG84615A1 (en) A method to form sidewall polysilicon capacitors
TW433056U (en) Walking assistance device
TW556490U (en) Punch-type device for drilling coconut
AUPR892301A0 (en) A device to produce a vapour
AUPR892401A0 (en) A device to produce a vapour
AU2002248488A1 (en) A method for providing entertainment to a portable device
GB0128807D0 (en) Device to aid drivers
TW477239U (en) Simplified essential oil extraction device
GB0125880D0 (en) A plant extraction device
GB0329089D0 (en) A crutch