SG10202003179UA - Method of controlling repair of volatile memory device and storage device performing the same - Google Patents
Method of controlling repair of volatile memory device and storage device performing the sameInfo
- Publication number
- SG10202003179UA SG10202003179UA SG10202003179UA SG10202003179UA SG10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA
- Authority
- SG
- Singapore
- Prior art keywords
- volatile memory
- same
- storage device
- memory device
- controlling repair
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0793—Remedial or corrective actions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
- G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
- G06F11/0727—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a storage system, e.g. in a DASD or network based storage system
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0751—Error or fault detection not based on redundancy
- G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
- G06F11/076—Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190088724A KR102669545B1 (en) | 2019-07-23 | 2019-07-23 | Method of controlling repair of volatile memory device and storage device performing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202003179UA true SG10202003179UA (en) | 2021-02-25 |
Family
ID=69953819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202003179UA SG10202003179UA (en) | 2019-07-23 | 2020-04-07 | Method of controlling repair of volatile memory device and storage device performing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US11301317B2 (en) |
EP (1) | EP3770764B1 (en) |
KR (1) | KR102669545B1 (en) |
CN (1) | CN112306737A (en) |
SG (1) | SG10202003179UA (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210138241A (en) * | 2020-05-12 | 2021-11-19 | 삼성전자주식회사 | Memory controller, memory system and memory module |
US11687407B2 (en) * | 2020-08-27 | 2023-06-27 | Micron Technologies, Inc. | Shared error correction code (ECC) circuitry |
US11907544B2 (en) | 2020-08-31 | 2024-02-20 | Micron Technology, Inc. | Automated error correction with memory refresh |
US11507296B2 (en) * | 2021-03-10 | 2022-11-22 | Micron Technology, Inc. | Repair operation techniques |
US12086026B2 (en) | 2021-03-17 | 2024-09-10 | Micron Technology, Inc. | Multiple error correction code (ECC) engines and ECC schemes |
KR20230030795A (en) | 2021-08-26 | 2023-03-07 | 삼성전자주식회사 | Memory controller and the memory device comprising the same |
CN115168115B (en) * | 2022-09-06 | 2022-11-15 | 北京象帝先计算技术有限公司 | OTP module-based data repair method, OTP controller and chip |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002109899A (en) * | 2000-07-26 | 2002-04-12 | Mitsubishi Electric Corp | Semiconductor storage device and semiconductor integrated circuit device equipped with the same |
US8473791B2 (en) | 2007-04-30 | 2013-06-25 | Hewlett-Packard Development Company, L.P. | Redundant memory to mask DRAM failures |
JP5012898B2 (en) | 2007-07-18 | 2012-08-29 | 富士通株式会社 | Memory refresh device and memory refresh method |
US9547589B2 (en) | 2008-06-18 | 2017-01-17 | Super Talent Technology, Corp. | Endurance translation layer (ETL) and diversion of temp files for reduced flash wear of a super-endurance solid-state drive |
KR20130049332A (en) * | 2011-11-04 | 2013-05-14 | 삼성전자주식회사 | Memory system and operating method thereof |
US9135100B2 (en) * | 2013-03-14 | 2015-09-15 | Micron Technology, Inc. | Cooperative memory error detection and repair |
US10468118B2 (en) * | 2014-03-03 | 2019-11-05 | Hewlett Packard Enterprise Development Lp | DRAM row sparing |
US9495261B2 (en) * | 2014-03-13 | 2016-11-15 | Qualcomm Incorporated | Systems and methods for reducing memory failures |
KR102179829B1 (en) | 2014-07-10 | 2020-11-18 | 삼성전자주식회사 | Storage system managing run-time bad cells |
KR102258905B1 (en) * | 2015-07-02 | 2021-05-31 | 에스케이하이닉스 주식회사 | Semiconductor device and operating method thereof |
JP6520755B2 (en) | 2016-02-23 | 2019-05-29 | 富士通株式会社 | Information processing apparatus, semiconductor device, and memory inspection method |
US11481126B2 (en) | 2016-05-24 | 2022-10-25 | Micron Technology, Inc. | Memory device error based adaptive refresh rate systems and methods |
US10042700B2 (en) * | 2016-05-28 | 2018-08-07 | Advanced Micro Devices, Inc. | Integral post package repair |
KR102547713B1 (en) * | 2016-09-01 | 2023-06-26 | 삼성전자주식회사 | Semiconductor memory device and method of operating the same |
US10614906B2 (en) * | 2016-09-21 | 2020-04-07 | Samsung Electronics Co., Ltd. | Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices |
US10558521B2 (en) | 2017-02-27 | 2020-02-11 | Dell Products, Lp | System and method for providing predictive failure detection on DDR5 DIMMs using on-die ECC |
KR102347184B1 (en) * | 2017-05-23 | 2022-01-04 | 삼성전자주식회사 | Storage device and Method of operating the storage device |
JP2019053415A (en) * | 2017-09-13 | 2019-04-04 | 東芝メモリ株式会社 | Memory system, control method thereof and program |
US10649843B2 (en) * | 2018-08-03 | 2020-05-12 | Western Digital Technologies, Inc. | Storage systems with peer data scrub |
-
2019
- 2019-07-23 KR KR1020190088724A patent/KR102669545B1/en active IP Right Grant
-
2020
- 2020-02-13 US US16/790,256 patent/US11301317B2/en active Active
- 2020-03-23 EP EP20164785.6A patent/EP3770764B1/en active Active
- 2020-04-07 SG SG10202003179UA patent/SG10202003179UA/en unknown
- 2020-05-13 CN CN202010401661.0A patent/CN112306737A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102669545B1 (en) | 2024-05-27 |
CN112306737A (en) | 2021-02-02 |
EP3770764B1 (en) | 2023-09-06 |
US20210026728A1 (en) | 2021-01-28 |
EP3770764A1 (en) | 2021-01-27 |
US11301317B2 (en) | 2022-04-12 |
KR20210011610A (en) | 2021-02-02 |
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