SG10202003179UA - Method of controlling repair of volatile memory device and storage device performing the same - Google Patents

Method of controlling repair of volatile memory device and storage device performing the same

Info

Publication number
SG10202003179UA
SG10202003179UA SG10202003179UA SG10202003179UA SG10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA SG 10202003179U A SG10202003179U A SG 10202003179UA
Authority
SG
Singapore
Prior art keywords
volatile memory
same
storage device
memory device
controlling repair
Prior art date
Application number
SG10202003179UA
Inventor
Kim Dong
Park Inhoon
Park Jangseon
Eun Hyunglae
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202003179UA publication Critical patent/SG10202003179UA/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0793Remedial or corrective actions
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106Correcting systematically all correctable errors, i.e. scrubbing
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0727Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a storage system, e.g. in a DASD or network based storage system
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751Error or fault detection not based on redundancy
    • G06F11/0754Error or fault detection not based on redundancy by exceeding limits
    • G06F11/076Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38Response verification devices
    • G11C29/42Response verification devices using error correcting codes [ECC] or parity check
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/76Masking faults in memories by using spares or by reconfiguring using address translation or modifications

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
SG10202003179UA 2019-07-23 2020-04-07 Method of controlling repair of volatile memory device and storage device performing the same SG10202003179UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190088724A KR102669545B1 (en) 2019-07-23 2019-07-23 Method of controlling repair of volatile memory device and storage device performing the same

Publications (1)

Publication Number Publication Date
SG10202003179UA true SG10202003179UA (en) 2021-02-25

Family

ID=69953819

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202003179UA SG10202003179UA (en) 2019-07-23 2020-04-07 Method of controlling repair of volatile memory device and storage device performing the same

Country Status (5)

Country Link
US (1) US11301317B2 (en)
EP (1) EP3770764B1 (en)
KR (1) KR102669545B1 (en)
CN (1) CN112306737A (en)
SG (1) SG10202003179UA (en)

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KR20210138241A (en) * 2020-05-12 2021-11-19 삼성전자주식회사 Memory controller, memory system and memory module
US11687407B2 (en) * 2020-08-27 2023-06-27 Micron Technologies, Inc. Shared error correction code (ECC) circuitry
US11907544B2 (en) 2020-08-31 2024-02-20 Micron Technology, Inc. Automated error correction with memory refresh
US11507296B2 (en) * 2021-03-10 2022-11-22 Micron Technology, Inc. Repair operation techniques
US12086026B2 (en) 2021-03-17 2024-09-10 Micron Technology, Inc. Multiple error correction code (ECC) engines and ECC schemes
KR20230030795A (en) 2021-08-26 2023-03-07 삼성전자주식회사 Memory controller and the memory device comprising the same
CN115168115B (en) * 2022-09-06 2022-11-15 北京象帝先计算技术有限公司 OTP module-based data repair method, OTP controller and chip

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JP2002109899A (en) * 2000-07-26 2002-04-12 Mitsubishi Electric Corp Semiconductor storage device and semiconductor integrated circuit device equipped with the same
US8473791B2 (en) 2007-04-30 2013-06-25 Hewlett-Packard Development Company, L.P. Redundant memory to mask DRAM failures
JP5012898B2 (en) 2007-07-18 2012-08-29 富士通株式会社 Memory refresh device and memory refresh method
US9547589B2 (en) 2008-06-18 2017-01-17 Super Talent Technology, Corp. Endurance translation layer (ETL) and diversion of temp files for reduced flash wear of a super-endurance solid-state drive
KR20130049332A (en) * 2011-11-04 2013-05-14 삼성전자주식회사 Memory system and operating method thereof
US9135100B2 (en) * 2013-03-14 2015-09-15 Micron Technology, Inc. Cooperative memory error detection and repair
US10468118B2 (en) * 2014-03-03 2019-11-05 Hewlett Packard Enterprise Development Lp DRAM row sparing
US9495261B2 (en) * 2014-03-13 2016-11-15 Qualcomm Incorporated Systems and methods for reducing memory failures
KR102179829B1 (en) 2014-07-10 2020-11-18 삼성전자주식회사 Storage system managing run-time bad cells
KR102258905B1 (en) * 2015-07-02 2021-05-31 에스케이하이닉스 주식회사 Semiconductor device and operating method thereof
JP6520755B2 (en) 2016-02-23 2019-05-29 富士通株式会社 Information processing apparatus, semiconductor device, and memory inspection method
US11481126B2 (en) 2016-05-24 2022-10-25 Micron Technology, Inc. Memory device error based adaptive refresh rate systems and methods
US10042700B2 (en) * 2016-05-28 2018-08-07 Advanced Micro Devices, Inc. Integral post package repair
KR102547713B1 (en) * 2016-09-01 2023-06-26 삼성전자주식회사 Semiconductor memory device and method of operating the same
US10614906B2 (en) * 2016-09-21 2020-04-07 Samsung Electronics Co., Ltd. Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
US10558521B2 (en) 2017-02-27 2020-02-11 Dell Products, Lp System and method for providing predictive failure detection on DDR5 DIMMs using on-die ECC
KR102347184B1 (en) * 2017-05-23 2022-01-04 삼성전자주식회사 Storage device and Method of operating the storage device
JP2019053415A (en) * 2017-09-13 2019-04-04 東芝メモリ株式会社 Memory system, control method thereof and program
US10649843B2 (en) * 2018-08-03 2020-05-12 Western Digital Technologies, Inc. Storage systems with peer data scrub

Also Published As

Publication number Publication date
KR102669545B1 (en) 2024-05-27
CN112306737A (en) 2021-02-02
EP3770764B1 (en) 2023-09-06
US20210026728A1 (en) 2021-01-28
EP3770764A1 (en) 2021-01-27
US11301317B2 (en) 2022-04-12
KR20210011610A (en) 2021-02-02

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