SG10201910033TA - Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus - Google Patents

Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus

Info

Publication number
SG10201910033TA
SG10201910033TA SG10201910033TA SG10201910033TA SG10201910033TA SG 10201910033T A SG10201910033T A SG 10201910033TA SG 10201910033T A SG10201910033T A SG 10201910033TA SG 10201910033T A SG10201910033T A SG 10201910033TA SG 10201910033T A SG10201910033T A SG 10201910033TA
Authority
SG
Singapore
Prior art keywords
laser processing
processing apparatus
facet region
wafer producing
producing method
Prior art date
Application number
SG10201910033TA
Other languages
English (en)
Inventor
Ito Yusaku
Murazawa Naoki
Hirata Kazuya
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201910033TA publication Critical patent/SG10201910033TA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N2021/8411Application to online plant, process monitoring
    • G01N2021/8416Application to online plant, process monitoring and process controlling, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Power Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201910033TA 2018-11-08 2019-10-26 Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus SG10201910033TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018210679A JP7229729B2 (ja) 2018-11-08 2018-11-08 Facet領域の検出方法および検出装置ならびにウエーハの生成方法およびレーザー加工装置

Publications (1)

Publication Number Publication Date
SG10201910033TA true SG10201910033TA (en) 2020-06-29

Family

ID=70469498

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201910033TA SG10201910033TA (en) 2018-11-08 2019-10-26 Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus

Country Status (7)

Country Link
US (2) US11340163B2 (ja)
JP (1) JP7229729B2 (ja)
KR (1) KR20200053410A (ja)
CN (1) CN111162017A (ja)
DE (1) DE102019217286A1 (ja)
SG (1) SG10201910033TA (ja)
TW (1) TWI831862B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7128067B2 (ja) * 2018-09-14 2022-08-30 株式会社ディスコ ウエーハの生成方法およびレーザー加工装置
JP7229729B2 (ja) * 2018-11-08 2023-02-28 株式会社ディスコ Facet領域の検出方法および検出装置ならびにウエーハの生成方法およびレーザー加工装置
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US20220178837A1 (en) * 2019-03-28 2022-06-09 Hamamatsu Photonics K.K. Inspection apparatus and inspection method
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP2022127087A (ja) 2021-02-19 2022-08-31 株式会社ディスコ 検出装置
JP2022127088A (ja) 2021-02-19 2022-08-31 株式会社ディスコ レーザー加工装置及びレーザー加工方法
JP2023003693A (ja) 2021-06-24 2023-01-17 株式会社ディスコ ファセット領域の検出方法、ウエーハの生成方法、検出装置、およびレーザー加工装置
WO2023106018A1 (ja) * 2021-12-08 2023-06-15 株式会社デンソー ウェハ製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000094221A (ja) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd 放電式ワイヤソー
JP6124287B2 (ja) 2013-03-04 2017-05-10 一般財団法人電力中央研究所 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法
JP6399913B2 (ja) 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
WO2017135272A1 (ja) 2016-02-04 2017-08-10 新日鐵住金株式会社 SiC単結晶の製造方法及びSiC種結晶
JP2017227532A (ja) * 2016-06-22 2017-12-28 株式会社ディスコ 蛍光検出装置
US10147609B2 (en) * 2016-12-15 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor epitaxy bordering isolation structure
JP7106217B2 (ja) * 2018-08-22 2022-07-26 株式会社ディスコ ファセット領域の検出方法及び検出装置
JP7128067B2 (ja) * 2018-09-14 2022-08-30 株式会社ディスコ ウエーハの生成方法およびレーザー加工装置
JP7229729B2 (ja) * 2018-11-08 2023-02-28 株式会社ディスコ Facet領域の検出方法および検出装置ならびにウエーハの生成方法およびレーザー加工装置

Also Published As

Publication number Publication date
US11340163B2 (en) 2022-05-24
JP2020077783A (ja) 2020-05-21
JP7229729B2 (ja) 2023-02-28
TWI831862B (zh) 2024-02-11
US20200150038A1 (en) 2020-05-14
US20220236185A1 (en) 2022-07-28
TW202030474A (zh) 2020-08-16
CN111162017A (zh) 2020-05-15
KR20200053410A (ko) 2020-05-18
DE102019217286A1 (de) 2020-05-14

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