SG10201909185PA - Memory device including charge pump circuit - Google Patents
Memory device including charge pump circuitInfo
- Publication number
- SG10201909185PA SG10201909185PA SG10201909185PA SG10201909185PA SG10201909185PA SG 10201909185P A SG10201909185P A SG 10201909185PA SG 10201909185P A SG10201909185P A SG 10201909185PA SG 10201909185P A SG10201909185P A SG 10201909185PA SG 10201909185P A SG10201909185P A SG 10201909185PA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- device including
- charge pump
- pump circuit
- including charge
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180119304A KR102545174B1 (en) | 2018-10-05 | 2018-10-05 | Memory device having charge pump circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201909185PA true SG10201909185PA (en) | 2020-05-28 |
Family
ID=70051246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201909185PA SG10201909185PA (en) | 2018-10-05 | 2019-10-01 | Memory device including charge pump circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US10867639B2 (en) |
KR (1) | KR102545174B1 (en) |
CN (1) | CN111009267A (en) |
SG (1) | SG10201909185PA (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102609558B1 (en) * | 2018-12-07 | 2023-12-04 | 삼성전자주식회사 | Voltage generator and operating method thereof |
KR20220049653A (en) * | 2020-10-14 | 2022-04-22 | 삼성전자주식회사 | Nonvolatile memory device |
US11908528B2 (en) * | 2020-11-20 | 2024-02-20 | Stmicroelectronics International N.V. | Selectively configurable charge pump |
EP4033661B1 (en) * | 2020-11-25 | 2024-01-24 | Changxin Memory Technologies, Inc. | Control circuit and delay circuit |
KR20220118174A (en) * | 2021-02-18 | 2022-08-25 | 에스케이하이닉스 주식회사 | Charge pump circuit and operation method thereof and semiconductor device including charge pump circuit |
CN113409849A (en) * | 2021-05-21 | 2021-09-17 | 芯天下技术股份有限公司 | Method, device, storage medium and terminal for reducing programming power consumption |
IT202200006488A1 (en) * | 2022-04-01 | 2023-10-01 | St Microelectronics Srl | VOLTAGE REGULATOR DEVICE, CORRESPONDING PROCEDURE AND DATA STORAGE SYSTEM |
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JP2002032987A (en) * | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | Internal voltage generating circuit |
EP1310959B1 (en) * | 2001-11-09 | 2008-06-18 | STMicroelectronics S.r.l. | Low power charge pump circuit |
ITMI20022268A1 (en) | 2002-10-25 | 2004-04-26 | Atmel Corp | VARIABLE CHARGE PUMP CIRCUIT WITH DYNAMIC LOAD |
KR100572323B1 (en) * | 2003-12-11 | 2006-04-19 | 삼성전자주식회사 | Multilevel High Voltage Generator |
KR100645055B1 (en) * | 2004-10-28 | 2006-11-10 | 삼성전자주식회사 | Flash memory device and program method thereof |
KR100673170B1 (en) * | 2005-03-10 | 2007-01-22 | 주식회사 하이닉스반도체 | Flash memory device with improved erase function and method for controlling erase operation of the same |
KR100700147B1 (en) * | 2005-12-13 | 2007-03-28 | 삼성전자주식회사 | Circuit and method of driving sub word-lines of a semiconductor memory device |
US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
JP2008193766A (en) * | 2007-02-01 | 2008-08-21 | Spansion Llc | Voltage generating circuit and control method thereof |
US7760569B2 (en) * | 2007-04-05 | 2010-07-20 | Qimonda Ag | Semiconductor memory device with temperature control |
KR100918299B1 (en) * | 2007-04-25 | 2009-09-18 | 삼성전자주식회사 | Flash memory device including a row decoder having no bad bolck data storage means and control method thereof |
US7724603B2 (en) * | 2007-08-03 | 2010-05-25 | Freescale Semiconductor, Inc. | Method and circuit for preventing high voltage memory disturb |
US8072256B2 (en) * | 2007-09-14 | 2011-12-06 | Mosaid Technologies Incorporated | Dynamic random access memory and boosted voltage producer therefor |
US7760010B2 (en) * | 2007-10-30 | 2010-07-20 | International Business Machines Corporation | Switched-capacitor charge pumps |
US7701784B2 (en) * | 2007-11-02 | 2010-04-20 | Kabushiki Kaisha Toshiba | Semiconductor memory device which includes memory cell having charge accumulation layer and control gate |
US7956673B2 (en) | 2008-08-11 | 2011-06-07 | Micron Technology, Inc. | Variable stage charge pump and method for providing boosted output voltage |
US7973592B2 (en) * | 2009-07-21 | 2011-07-05 | Sandisk Corporation | Charge pump with current based regulation |
KR101605381B1 (en) * | 2009-09-28 | 2016-03-23 | 삼성전자주식회사 | Non-volatile memory device and non-volatile memory system having the same |
US20110133820A1 (en) | 2009-12-09 | 2011-06-09 | Feng Pan | Multi-Stage Charge Pump with Variable Number of Boosting Stages |
US8085086B1 (en) * | 2010-07-20 | 2011-12-27 | Macronix International Co., Ltd. | Non-volatile memory device and charge pump circuit for the same |
KR20120061574A (en) * | 2010-12-03 | 2012-06-13 | 에스케이하이닉스 주식회사 | Pump circuit and semiconductor memory device having the same |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
US8724373B2 (en) * | 2011-09-12 | 2014-05-13 | Qualcomm Incorporated | Apparatus for selective word-line boost on a memory cell |
KR20130031483A (en) * | 2011-09-21 | 2013-03-29 | 에스케이하이닉스 주식회사 | Non-volatile memory device |
JP2013114711A (en) * | 2011-11-28 | 2013-06-10 | Toshiba Corp | Voltage generation circuit |
KR20130063255A (en) * | 2011-12-06 | 2013-06-14 | 에스케이하이닉스 주식회사 | Semiconductor memory device and method of operating the same |
KR102083491B1 (en) * | 2012-12-05 | 2020-03-02 | 삼성전자 주식회사 | Memory device, memory system and operating method of the same |
KR102053944B1 (en) | 2013-02-21 | 2019-12-11 | 삼성전자주식회사 | Nonvolatile memory device and memory system including the same |
KR102161738B1 (en) * | 2014-04-07 | 2020-10-05 | 삼성전자주식회사 | Non-volatile memory device, memory system and operating method of non-volatile memory device |
KR102158859B1 (en) * | 2014-05-21 | 2020-09-22 | 삼성전자주식회사 | Voltage generator and semiconductor memory device including the same |
KR102131324B1 (en) * | 2014-07-08 | 2020-07-07 | 삼성전자 주식회사 | Resistive Memory Device and Operating Method thereof |
US9462395B2 (en) * | 2014-07-22 | 2016-10-04 | Stmicroelectronics S.R.L. | Biasing circuit for a MEMS acoustic transducer with reduced start-up time |
US9881654B2 (en) | 2015-01-14 | 2018-01-30 | Macronix International Co., Ltd. | Power source for memory circuitry |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
JP2017054574A (en) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | Voltage generation circuit and semiconductor memory device |
US9698676B1 (en) | 2016-03-11 | 2017-07-04 | Sandisk Technologies Llc | Charge pump based over-sampling with uniform step size for current detection |
US10014851B2 (en) | 2016-11-02 | 2018-07-03 | Texas Instruments Incorporated | Current sensing and control for a transistor power switch |
KR102242565B1 (en) * | 2017-06-08 | 2021-04-20 | 삼성전자주식회사 | Memory controller for controlling a memory device based on erase status information and an operation method thereof |
TWI702611B (en) * | 2018-12-06 | 2020-08-21 | 旺宏電子股份有限公司 | Memory circuit |
US11011239B2 (en) * | 2018-12-27 | 2021-05-18 | Kioxia Corporation | Semiconductor memory |
KR20200092749A (en) * | 2019-01-25 | 2020-08-04 | 삼성전자주식회사 | Integrated circuit including charging circuit and camera flash driver and operation method thereof |
-
2018
- 2018-10-05 KR KR1020180119304A patent/KR102545174B1/en active IP Right Grant
-
2019
- 2019-07-03 US US16/502,736 patent/US10867639B2/en active Active
- 2019-09-02 CN CN201910822645.6A patent/CN111009267A/en active Pending
- 2019-10-01 SG SG10201909185PA patent/SG10201909185PA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20200111513A1 (en) | 2020-04-09 |
CN111009267A (en) | 2020-04-14 |
KR102545174B1 (en) | 2023-06-19 |
US10867639B2 (en) | 2020-12-15 |
KR20200039403A (en) | 2020-04-16 |
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