SG10201907376RA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG10201907376RA SG10201907376RA SG10201907376RA SG10201907376RA SG10201907376RA SG 10201907376R A SG10201907376R A SG 10201907376RA SG 10201907376R A SG10201907376R A SG 10201907376RA SG 10201907376R A SG10201907376R A SG 10201907376RA SG 10201907376R A SG10201907376R A SG 10201907376RA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- groups
- polished
- abrasive particles
- simple silicon
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 2
- 239000002612 dispersion medium Substances 0.000 abstract 1
- 125000005372 silanol group Chemical group 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015024377A JP6423279B2 (ja) | 2015-02-10 | 2015-02-10 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201907376RA true SG10201907376RA (en) | 2019-09-27 |
Family
ID=56614623
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201907376RA SG10201907376RA (en) | 2015-02-10 | 2016-02-04 | Polishing composition |
SG11201706046PA SG11201706046PA (en) | 2015-02-10 | 2016-02-04 | Polishing composition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706046PA SG11201706046PA (en) | 2015-02-10 | 2016-02-04 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180022959A1 (ko) |
EP (1) | EP3258484A1 (ko) |
JP (1) | JP6423279B2 (ko) |
KR (1) | KR102649656B1 (ko) |
CN (1) | CN107396639B (ko) |
SG (2) | SG10201907376RA (ko) |
TW (3) | TWI755727B (ko) |
WO (1) | WO2016129508A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102611598B1 (ko) * | 2017-04-27 | 2023-12-08 | 주식회사 동진쎄미켐 | 화학-기계적 연마용 슬러리 조성물 |
JP7234008B2 (ja) * | 2019-03-29 | 2023-03-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP7285113B2 (ja) * | 2019-03-29 | 2023-06-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2021080441A (ja) * | 2019-11-20 | 2021-05-27 | 株式会社フジミインコーポレーテッド | 研磨組成物、研磨方法および基板の製造方法 |
JP7488672B2 (ja) * | 2020-03-19 | 2024-05-22 | 株式会社フジミインコーポレーテッド | 研磨方法および半導体基板の製造方法 |
JP2022052548A (ja) * | 2020-09-23 | 2022-04-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2023146034A (ja) * | 2022-03-29 | 2023-10-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびこれを用いた研磨方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2714411B2 (ja) * | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
JP3584485B2 (ja) * | 1993-03-03 | 2004-11-04 | 日産化学工業株式会社 | シリカゾルの製造方法 |
JP4635217B2 (ja) * | 2003-09-17 | 2011-02-23 | 学校法人慶應義塾 | 表面処理剤及び材料及び表面処理方法 |
TWI363796B (en) * | 2004-06-14 | 2012-05-11 | Kao Corp | Polishing composition |
JP2006231436A (ja) * | 2005-02-23 | 2006-09-07 | Tokyo Seimitsu Co Ltd | 研磨用スラリーおよび研磨方法 |
EP1860688A4 (en) * | 2005-03-16 | 2010-08-18 | Asahi Glass Co Ltd | AGING MACHINE FOR AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE, METHOD FOR POLISHING AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE, AND METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE |
US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
JP2008135452A (ja) * | 2006-11-27 | 2008-06-12 | Fujimi Inc | 研磨用組成物及び研磨方法 |
WO2008123373A1 (ja) * | 2007-03-27 | 2008-10-16 | Fuso Chemical Co., Ltd. | コロイダルシリカ及びその製造方法 |
KR101232442B1 (ko) * | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
JP2010034497A (ja) * | 2008-02-18 | 2010-02-12 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
WO2009104465A1 (ja) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
JP2009289885A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 研磨液及び研磨方法 |
JP2010067914A (ja) * | 2008-09-12 | 2010-03-25 | Fujifilm Corp | 化学的機械的研磨液、及び化学的機械的研磨方法 |
WO2011021599A1 (ja) * | 2009-08-19 | 2011-02-24 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
JP5744597B2 (ja) * | 2011-03-31 | 2015-07-08 | Hoya株式会社 | マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、転写マスクの製造方法、及び半導体装置の製造方法 |
-
2015
- 2015-02-10 JP JP2015024377A patent/JP6423279B2/ja active Active
-
2016
- 2016-02-04 CN CN201680009819.1A patent/CN107396639B/zh active Active
- 2016-02-04 WO PCT/JP2016/053419 patent/WO2016129508A1/ja active Application Filing
- 2016-02-04 SG SG10201907376RA patent/SG10201907376RA/en unknown
- 2016-02-04 SG SG11201706046PA patent/SG11201706046PA/en unknown
- 2016-02-04 EP EP16749152.1A patent/EP3258484A1/en not_active Withdrawn
- 2016-02-04 KR KR1020177021999A patent/KR102649656B1/ko active IP Right Grant
- 2016-02-04 US US15/549,503 patent/US20180022959A1/en not_active Abandoned
- 2016-02-05 TW TW109115241A patent/TWI755727B/zh active
- 2016-02-05 TW TW110125539A patent/TWI814030B/zh active
- 2016-02-05 TW TW105104151A patent/TWI746433B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201634618A (zh) | 2016-10-01 |
CN107396639B (zh) | 2021-05-25 |
JP2016149402A (ja) | 2016-08-18 |
WO2016129508A1 (ja) | 2016-08-18 |
JP6423279B2 (ja) | 2018-11-14 |
TW202033312A (zh) | 2020-09-16 |
SG11201706046PA (en) | 2017-08-30 |
TWI814030B (zh) | 2023-09-01 |
KR102649656B1 (ko) | 2024-03-21 |
TW202340406A (zh) | 2023-10-16 |
TWI746433B (zh) | 2021-11-21 |
KR20170115058A (ko) | 2017-10-16 |
CN107396639A (zh) | 2017-11-24 |
TW202140706A (zh) | 2021-11-01 |
TWI755727B (zh) | 2022-02-21 |
EP3258484A1 (en) | 2017-12-20 |
US20180022959A1 (en) | 2018-01-25 |
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