SG10201906813PA - X-ray detector, semiconductor memory device including the same, method of testing semiconductor memory device and method of manufacturing semiconductor memory device - Google Patents
X-ray detector, semiconductor memory device including the same, method of testing semiconductor memory device and method of manufacturing semiconductor memory deviceInfo
- Publication number
- SG10201906813PA SG10201906813PA SG10201906813PA SG10201906813PA SG10201906813PA SG 10201906813P A SG10201906813P A SG 10201906813PA SG 10201906813P A SG10201906813P A SG 10201906813PA SG 10201906813P A SG10201906813P A SG 10201906813PA SG 10201906813P A SG10201906813P A SG 10201906813PA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- semiconductor memory
- ray detector
- same
- testing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/245—Measuring radiation intensity with semiconductor detectors using memory cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0403—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals during or with feedback to manufacture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5604—Display of error information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180116786A KR102567134B1 (en) | 2018-10-01 | 2018-10-01 | X-ray detector, semiconductor memory device including the same and method of testing semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201906813PA true SG10201906813PA (en) | 2020-05-28 |
Family
ID=69947746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201906813PA SG10201906813PA (en) | 2018-10-01 | 2019-07-23 | X-ray detector, semiconductor memory device including the same, method of testing semiconductor memory device and method of manufacturing semiconductor memory device |
Country Status (4)
Country | Link |
---|---|
US (1) | US10984853B2 (en) |
KR (1) | KR102567134B1 (en) |
CN (1) | CN110967726A (en) |
SG (1) | SG10201906813PA (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210007386A (en) * | 2019-07-11 | 2021-01-20 | 에스케이하이닉스 주식회사 | Monitoring circuit and semiconductor device |
WO2022067400A1 (en) * | 2020-09-29 | 2022-04-07 | Scients - Sistemas Cientificos De Instrumentacao E Engenharia Para Novas Tecnologias Ltda | Electronic memory system using x-rays |
US11315653B2 (en) * | 2020-09-30 | 2022-04-26 | Nanya Technology Corporation | Dynamic random access memory and method thereof |
Family Cites Families (42)
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US2706790A (en) * | 1950-10-18 | 1955-04-19 | Gen Electric | X-ray detection |
DE2808288A1 (en) * | 1978-02-27 | 1979-08-30 | Siemens Ag | ROENTGEN DIAGNOSTIC DEVICE FOR ROENTGENOLOGICAL IMAGES |
US4819212A (en) * | 1986-05-31 | 1989-04-04 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with readout test circuitry |
JPS62293598A (en) * | 1986-06-12 | 1987-12-21 | Toshiba Corp | Semiconductor storage device |
JPS6411533A (en) * | 1987-07-03 | 1989-01-17 | Toshiba Corp | X-ray diagnostic apparatus |
US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
JP2716906B2 (en) * | 1992-03-27 | 1998-02-18 | 株式会社東芝 | Nonvolatile semiconductor memory device |
JPH05283708A (en) * | 1992-04-02 | 1993-10-29 | Mitsubishi Electric Corp | Nonvolatile semiconductor memory, its manufacturing method and testing method |
US5568426A (en) * | 1995-07-26 | 1996-10-22 | Micron Quantum Devices, Inc. | Method and apparatus for performing memory cell verification on a nonvolatile memory circuit |
KR0157903B1 (en) * | 1995-10-13 | 1999-03-20 | 문정환 | Test method and test circuit of the converting characteristics in a/d converter |
US6380729B1 (en) * | 1999-02-16 | 2002-04-30 | Alien Technology Corporation | Testing integrated circuit dice |
KR100464321B1 (en) * | 2002-11-20 | 2004-12-31 | 삼성전자주식회사 | Silicon optoelectronic device and image input/output apparatus applying it |
US7057180B2 (en) * | 2003-07-18 | 2006-06-06 | International Business Machines Corporation | Detector for alpha particle or cosmic ray |
JP2005302809A (en) * | 2004-04-07 | 2005-10-27 | Toshiba Corp | Semiconductor device |
WO2006078720A2 (en) * | 2005-01-19 | 2006-07-27 | Integrated Magnetoelectronics Corporation | Radiation detector |
WO2006103794A1 (en) * | 2005-03-25 | 2006-10-05 | Konica Minolta Medical & Graphic, Inc. | Radiographic imaging system, console, and program executed by console |
US7375339B2 (en) * | 2006-04-28 | 2008-05-20 | International Business Machines Corporation | Monitoring ionizing radiation in silicon-on insulator integrated circuits |
US7601962B2 (en) * | 2007-01-12 | 2009-10-13 | General Electric Company | Systems and methods for reading data |
US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
US7916836B2 (en) * | 2007-09-26 | 2011-03-29 | General Electric Company | Method and apparatus for flexibly binning energy discriminating data |
AU2009210747B2 (en) * | 2008-01-30 | 2011-11-17 | Cardiac Pacemakers, Inc. | Method and apparatus for radiation effects detection |
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US8815723B2 (en) * | 2011-09-30 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for enhancing image quality of backside illuminated image sensor |
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US20130151201A1 (en) * | 2011-12-08 | 2013-06-13 | John W. McCorkle | Method and system for processing received data |
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US9183910B2 (en) * | 2012-05-31 | 2015-11-10 | Samsung Electronics Co., Ltd. | Semiconductor memory devices for alternately selecting bit lines |
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US9438120B2 (en) * | 2014-01-22 | 2016-09-06 | General Electric Company | Systems and methods for fast kilovolt switching in an X-ray system |
KR102244618B1 (en) * | 2014-02-21 | 2021-04-26 | 삼성전자 주식회사 | Flash memory device and controlling method of flash memory device |
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KR102633091B1 (en) * | 2016-09-19 | 2024-02-06 | 삼성전자주식회사 | Memory device with error check function of memory cell array and memory module including the same |
CN109716165B (en) * | 2016-10-27 | 2022-09-30 | 深圳帧观德芯科技有限公司 | Dark noise compensation in radiation detectors |
-
2018
- 2018-10-01 KR KR1020180116786A patent/KR102567134B1/en active IP Right Grant
-
2019
- 2019-05-13 US US16/410,120 patent/US10984853B2/en active Active
- 2019-07-19 CN CN201910658595.2A patent/CN110967726A/en active Pending
- 2019-07-23 SG SG10201906813PA patent/SG10201906813PA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US10984853B2 (en) | 2021-04-20 |
KR102567134B1 (en) | 2023-08-16 |
CN110967726A (en) | 2020-04-07 |
US20200105339A1 (en) | 2020-04-02 |
KR20200037503A (en) | 2020-04-09 |
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