SG10201900129QA - Image sensors - Google Patents
Image sensorsInfo
- Publication number
- SG10201900129QA SG10201900129QA SG10201900129QA SG10201900129QA SG10201900129QA SG 10201900129Q A SG10201900129Q A SG 10201900129QA SG 10201900129Q A SG10201900129Q A SG 10201900129QA SG 10201900129Q A SG10201900129Q A SG 10201900129QA SG 10201900129Q A SG10201900129Q A SG 10201900129QA
- Authority
- SG
- Singapore
- Prior art keywords
- color filter
- image sensors
- array
- unit
- color
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Optical Filters (AREA)
- Color Image Communication Systems (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180002920A KR102507474B1 (ko) | 2018-01-09 | 2018-01-09 | 이미지 센서 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201900129QA true SG10201900129QA (en) | 2019-08-27 |
Family
ID=64559483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201900129QA SG10201900129QA (en) | 2018-01-09 | 2019-01-07 | Image sensors |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10811450B2 (fr) |
| EP (1) | EP3509107B1 (fr) |
| JP (1) | JP7290418B2 (fr) |
| KR (1) | KR102507474B1 (fr) |
| CN (1) | CN110034138B (fr) |
| SG (1) | SG10201900129QA (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021068788A (ja) * | 2019-10-21 | 2021-04-30 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、および撮像システム |
| JPWO2021131859A1 (fr) * | 2019-12-27 | 2021-07-01 | ||
| KR20220143013A (ko) | 2020-02-19 | 2022-10-24 | 소니그룹주식회사 | 화상 처리 방법, 센서 장치 |
| KR20220001702A (ko) * | 2020-06-30 | 2022-01-06 | 삼성전자주식회사 | 이미지 센서를 포함하는 전자 장치 |
| KR20220073033A (ko) * | 2020-11-26 | 2022-06-03 | 삼성전자주식회사 | 이미지 센서 및 이미지 센싱 시스템 |
| KR20220087678A (ko) * | 2020-12-18 | 2022-06-27 | 삼성전자주식회사 | 이미지 센서 및 이미지 센싱 회로 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037044B2 (fr) | 1973-04-19 | 1975-11-29 | ||
| US6628331B1 (en) | 1998-12-18 | 2003-09-30 | Intel Corporation | Cyan-magenta-yellow-blue color filter array |
| JP2002014223A (ja) | 2000-06-30 | 2002-01-18 | Sumitomo Chem Co Ltd | 黄色フィルタ層を有する色フィルタアレイおよびその製造方法 |
| EP1739751B1 (fr) | 2005-06-30 | 2008-07-02 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Detecteur d'images en couleur |
| KR100929349B1 (ko) * | 2007-01-30 | 2009-12-03 | 삼성전자주식회사 | 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법 |
| KR101356698B1 (ko) | 2007-10-01 | 2014-01-29 | 삼성전자주식회사 | 화소 간 크로스토크의 영향을 저감하는 이미지 센서, 컬러필터 어레이, 및 촬상 장치 |
| KR101411548B1 (ko) | 2007-11-05 | 2014-07-07 | 삼성전자주식회사 | 이미지 센서, 컬러 필터 어레이, 및 촬상 장치 |
| US7990445B2 (en) | 2008-05-30 | 2011-08-02 | Omnivision Technologies, Inc. | Image sensor having differing wavelength filters |
| JP2012169530A (ja) * | 2011-02-16 | 2012-09-06 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
| KR20130134292A (ko) * | 2012-05-30 | 2013-12-10 | 삼성전자주식회사 | 이미지 센서, 상기 이미지 센서를 포함하는 이미지 처리 시스템 및 상기 이미지 센서의 제조 방법 |
| KR102219199B1 (ko) | 2014-04-29 | 2021-02-23 | 삼성전자주식회사 | 이미지 센서의 픽셀 어레이 및 이미지 센서 |
| KR102366416B1 (ko) * | 2014-08-11 | 2022-02-23 | 삼성전자주식회사 | Cmos 이미지 센서 |
| KR102383649B1 (ko) * | 2014-08-19 | 2022-04-08 | 삼성전자주식회사 | Cmos 이미지 센서 |
| KR102395775B1 (ko) | 2015-03-02 | 2022-05-09 | 삼성전자주식회사 | 컬러 필터를 포함하는 이미지 센서 및 상기 이미지 센서의 제조 방법 |
| US10349015B2 (en) * | 2015-06-08 | 2019-07-09 | Trustees Of Dartmouth College | Image sensor color filter array pattern |
| KR102437162B1 (ko) * | 2015-10-12 | 2022-08-29 | 삼성전자주식회사 | 이미지 센서 |
| KR102547655B1 (ko) | 2015-11-18 | 2023-06-23 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| JP5952952B1 (ja) | 2015-11-27 | 2016-07-13 | トーア紡マテリアル株式会社 | タフトカーペットの連続染色方法及び連続染色機 |
| KR102491497B1 (ko) * | 2015-11-30 | 2023-01-20 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| TWI785618B (zh) | 2016-01-27 | 2022-12-01 | 日商新力股份有限公司 | 固體攝像元件及電子機器 |
| KR102661391B1 (ko) * | 2016-10-12 | 2024-04-26 | 삼성전자주식회사 | 이미지 센서 |
| KR20180077393A (ko) * | 2016-12-28 | 2018-07-09 | 삼성전자주식회사 | 광센서 |
-
2018
- 2018-01-09 KR KR1020180002920A patent/KR102507474B1/ko active IP Right Grant
- 2018-09-06 US US16/123,092 patent/US10811450B2/en active Active
- 2018-11-29 EP EP18209048.0A patent/EP3509107B1/fr active Active
- 2018-12-20 CN CN201811561957.8A patent/CN110034138B/zh active Active
-
2019
- 2019-01-07 JP JP2019000849A patent/JP7290418B2/ja active Active
- 2019-01-07 SG SG10201900129QA patent/SG10201900129QA/en unknown
-
2020
- 2020-09-23 US US17/029,115 patent/US11631710B2/en active Active
-
2023
- 2023-04-10 US US18/297,679 patent/US20230246046A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20210005657A1 (en) | 2021-01-07 |
| CN110034138A (zh) | 2019-07-19 |
| KR102507474B1 (ko) | 2023-03-10 |
| KR20190084780A (ko) | 2019-07-17 |
| US11631710B2 (en) | 2023-04-18 |
| EP3509107A3 (fr) | 2019-09-04 |
| US20230246046A1 (en) | 2023-08-03 |
| US20190214421A1 (en) | 2019-07-11 |
| JP2019122045A (ja) | 2019-07-22 |
| EP3509107A2 (fr) | 2019-07-10 |
| CN110034138B (zh) | 2023-11-14 |
| US10811450B2 (en) | 2020-10-20 |
| JP7290418B2 (ja) | 2023-06-13 |
| EP3509107B1 (fr) | 2020-11-04 |
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