SG10201808136VA - Image sensors - Google Patents
Image sensorsInfo
- Publication number
- SG10201808136VA SG10201808136VA SG10201808136VA SG10201808136VA SG10201808136VA SG 10201808136V A SG10201808136V A SG 10201808136VA SG 10201808136V A SG10201808136V A SG 10201808136VA SG 10201808136V A SG10201808136V A SG 10201808136VA SG 10201808136V A SG10201808136V A SG 10201808136VA
- Authority
- SG
- Singapore
- Prior art keywords
- block
- region
- substrate
- separate
- regions
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Image Input (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180003164A KR20190085258A (ko) | 2018-01-10 | 2018-01-10 | 이미지 센서 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201808136VA true SG10201808136VA (en) | 2019-08-27 |
Family
ID=65010657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201808136VA SG10201808136VA (en) | 2018-01-10 | 2018-09-19 | Image sensors |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10497730B2 (ko) |
| EP (1) | EP3511984A1 (ko) |
| JP (1) | JP2019122028A (ko) |
| KR (1) | KR20190085258A (ko) |
| CN (1) | CN110021612A (ko) |
| SG (1) | SG10201808136VA (ko) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106488148B (zh) * | 2016-11-01 | 2019-09-17 | 首都师范大学 | 一种超分辨率图像传感器及其构造方法 |
| KR102531355B1 (ko) * | 2018-03-20 | 2023-05-10 | 삼성전자주식회사 | 이미지 센서 |
| EP3701420B1 (en) | 2018-05-07 | 2021-04-14 | WaveTouch Limited | Compact optical sensor for fingerprint detection |
| CN109521605B (zh) * | 2018-12-24 | 2021-10-15 | 厦门天马微电子有限公司 | 背光模组和显示装置 |
| JP2020113573A (ja) * | 2019-01-08 | 2020-07-27 | キヤノン株式会社 | 光電変換装置 |
| TWI705386B (zh) * | 2019-04-19 | 2020-09-21 | 致伸科技股份有限公司 | 指紋辨識模組 |
| JP7006654B2 (ja) * | 2019-05-09 | 2022-01-24 | セイコーエプソン株式会社 | 表示装置、および電子機器 |
| WO2021072753A1 (zh) * | 2019-10-18 | 2021-04-22 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
| TW202113666A (zh) * | 2019-09-22 | 2021-04-01 | 神盾股份有限公司 | 指紋感測模組及電子裝置 |
| EP3812801A1 (en) * | 2019-10-23 | 2021-04-28 | Samsung Electronics Co., Ltd. | Image sensor including color separating lens array and electronic device including the image sensor |
| US20220406838A1 (en) * | 2019-11-01 | 2022-12-22 | Wavetouch Denmark A/S | Method for Manufacturing a Biometric Imaging Device by Means of Nanoimprint Lithography |
| CN110708453A (zh) * | 2019-11-12 | 2020-01-17 | Oppo广东移动通信有限公司 | 图像传感器、相机模组、终端和成像方法 |
| CN110995968B (zh) * | 2019-11-25 | 2021-08-20 | Oppo广东移动通信有限公司 | 图像传感器、摄像装置、电子设备和成像方法 |
| US20210351216A1 (en) * | 2020-05-08 | 2021-11-11 | Visera Technologies Company Limited | Optical imaging device |
| KR20230092882A (ko) * | 2020-10-28 | 2023-06-26 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 장치 및 전자 기기 |
| WO2022119491A1 (en) * | 2020-12-01 | 2022-06-09 | Fingerprint Cards Anacatum Ip Ab | Biometric optical antispoofing based on imaging through spatially varying optical filter |
| US11624653B2 (en) | 2020-12-03 | 2023-04-11 | Artilux, Inc. | Multi-application optical sensing apparatus and method thereof |
| US20220406830A1 (en) * | 2021-06-21 | 2022-12-22 | Allegro Microsystems, Llc | Photoreceiver array having microlenses |
| TWI816397B (zh) * | 2021-12-30 | 2023-09-21 | 仟融科技股份有限公司 | 膚紋控制系統、膚紋控制方法、膚紋取樣裝置及電腦可讀媒體 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995800B2 (en) | 2000-01-27 | 2006-02-07 | Canon Kabushiki Kaisha | Image pickup apparatus utilizing a plurality of converging lenses |
| JP3709873B2 (ja) | 2003-02-19 | 2005-10-26 | ソニー株式会社 | 固体撮像装置及び撮像カメラ |
| KR100659503B1 (ko) | 2004-07-27 | 2006-12-20 | 삼성전자주식회사 | 광감도를 개선한 이미지 센서 |
| JP2006304364A (ja) | 2006-07-26 | 2006-11-02 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| KR20080015310A (ko) | 2006-08-14 | 2008-02-19 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
| JP4483951B2 (ja) | 2008-01-28 | 2010-06-16 | ソニー株式会社 | 撮像装置 |
| JP5272433B2 (ja) | 2008-02-15 | 2013-08-28 | 富士通セミコンダクター株式会社 | 画像撮像素子のずらし量算出方法及び装置、画像撮像素子、画像撮像素子内蔵装置 |
| JP2010062438A (ja) * | 2008-09-05 | 2010-03-18 | Toshiba Corp | 固体撮像装置およびその設計方法 |
| JP5359323B2 (ja) * | 2009-01-30 | 2013-12-04 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5547717B2 (ja) * | 2009-04-07 | 2014-07-16 | ローム株式会社 | 光電変換装置および撮像装置 |
| JP5513623B2 (ja) * | 2010-08-24 | 2014-06-04 | 富士フイルム株式会社 | 固体撮像装置 |
| GB2498972A (en) | 2012-02-01 | 2013-08-07 | St Microelectronics Ltd | Pixel and microlens array |
| JP2014064251A (ja) * | 2012-09-24 | 2014-04-10 | Toshiba Corp | 固体撮像装置及び撮像方法 |
| KR102103983B1 (ko) | 2013-07-31 | 2020-04-23 | 삼성전자주식회사 | 시프트된 마이크로 렌즈 어레이를 구비하는 라이트 필드 영상 획득 장치 |
| TWI484236B (zh) | 2013-09-09 | 2015-05-11 | Himax Imaging Ltd | 影像感測器 |
| EP3001672A1 (en) * | 2014-09-25 | 2016-03-30 | Thomson Licensing | Plenoptic camera comprising a spatial light modulator |
| US20160266695A1 (en) * | 2015-03-10 | 2016-09-15 | Crucialtec Co., Ltd. | Display apparatus having image scanning function |
| KR102382835B1 (ko) | 2015-12-03 | 2022-04-06 | 삼성전자주식회사 | 다양한 동작 모드를 지원하는 이미지 센서 및 그 동작 방법 |
| US20170221960A1 (en) * | 2016-02-03 | 2017-08-03 | Sunasic Technologies, Inc. | Contact image sensor |
-
2018
- 2018-01-10 KR KR1020180003164A patent/KR20190085258A/ko unknown
- 2018-06-21 US US16/014,088 patent/US10497730B2/en active Active
- 2018-09-19 SG SG10201808136VA patent/SG10201808136VA/en unknown
- 2018-11-12 JP JP2018211999A patent/JP2019122028A/ja active Pending
- 2018-11-14 CN CN201811352594.7A patent/CN110021612A/zh active Pending
-
2019
- 2019-01-09 EP EP19150879.5A patent/EP3511984A1/en not_active Withdrawn
- 2019-09-30 US US16/587,944 patent/US10833114B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20200027912A1 (en) | 2020-01-23 |
| US10497730B2 (en) | 2019-12-03 |
| KR20190085258A (ko) | 2019-07-18 |
| JP2019122028A (ja) | 2019-07-22 |
| US20190214420A1 (en) | 2019-07-11 |
| CN110021612A (zh) | 2019-07-16 |
| US10833114B2 (en) | 2020-11-10 |
| EP3511984A1 (en) | 2019-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10201808136VA (en) | Image sensors | |
| EP2980851A3 (en) | Solid-state image pickup element and image pickup system | |
| EP3270419A3 (en) | Image sensor and electronic device including the same | |
| WO2017204776A8 (en) | Electronic device including processing circuitry for sensing images from spaced apart sub-arrays and related methods | |
| MY188306A (en) | Optical lens assembly and apparatus having the same | |
| EP3779550A4 (en) | LENS MODULE AND CAMERA | |
| MX2019003319A (es) | Dispositivos de seguridad. | |
| MY184809A (en) | Image sensor, imaging device, mobile terminal and imaging method for producing high resolution image | |
| EP3176824A3 (en) | Image pickup device | |
| WO2008085778A3 (en) | Configurable pixel array system and method | |
| NZ737677A (en) | Semi-global shutter imager | |
| BR112018071081A2 (pt) | dispositivo micro-óptico com elemento de focagem integrado e estrutura de elemento de imagem | |
| SG11202100511SA (en) | Spoof detection using iris images | |
| SG11202009813XA (en) | Pixel collection circuit and optical flow sensor | |
| PL3865925T3 (pl) | Optyczna soczewka do obrazowania i urządzenie do obrazowania | |
| JP2013179575A5 (ko) | ||
| EP3758365A4 (en) | PIXEL ACQUISITION CIRCUIT, OPTICAL FLOW SENSOR AND IMAGE AND OPTICAL FLOW INFORMATION ACQUISITION SYSTEM | |
| MX2018012432A (es) | "dispositivo micro-optico con efecto optico de doble cara". | |
| EP3756224A4 (en) | IMAGE SENSOR AND SEMICONDUCTOR STRUCTURE | |
| JP2015162646A5 (ko) | ||
| EP3882685A4 (en) | PHOTOGRAPHY MODULE HAVING A LIQUID LENS AND ITS IMAGE SURFACE CORRECTION METHOD | |
| EP3940752A4 (en) | IMAGE CAPTURE ELEMENT AND SEMICONDUCTOR ELEMENT | |
| WO2008132812A1 (ja) | 固体撮像素子およびこれを用いた撮像装置 | |
| EP4350772A3 (en) | Imaging element, laminated imaging element, and solid-state imaging device | |
| FR3072465B1 (fr) | Pixel de roic multimode avec capacite de telemetrie laser (lrf) |