SG11202009813XA - Pixel collection circuit and optical flow sensor - Google Patents

Pixel collection circuit and optical flow sensor

Info

Publication number
SG11202009813XA
SG11202009813XA SG11202009813XA SG11202009813XA SG11202009813XA SG 11202009813X A SG11202009813X A SG 11202009813XA SG 11202009813X A SG11202009813X A SG 11202009813XA SG 11202009813X A SG11202009813X A SG 11202009813XA SG 11202009813X A SG11202009813X A SG 11202009813XA
Authority
SG
Singapore
Prior art keywords
flow sensor
optical flow
collection circuit
pixel collection
pixel
Prior art date
Application number
SG11202009813XA
Inventor
Shoushun Chen
Original Assignee
Celepixel Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Celepixel Tech Co Ltd filed Critical Celepixel Tech Co Ltd
Publication of SG11202009813XA publication Critical patent/SG11202009813XA/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707—Pixels for event detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
SG11202009813XA 2018-04-25 2018-05-24 Pixel collection circuit and optical flow sensor SG11202009813XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810380023.8A CN108827461B (en) 2018-04-25 2018-04-25 Pixel Acquisition Circuit and light stream sensor
PCT/CN2018/088260 WO2019205217A1 (en) 2018-04-25 2018-05-24 Pixel acquisition circuit and optical flow sensor

Publications (1)

Publication Number Publication Date
SG11202009813XA true SG11202009813XA (en) 2020-11-27

Family

ID=64154904

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009813XA SG11202009813XA (en) 2018-04-25 2018-05-24 Pixel collection circuit and optical flow sensor

Country Status (6)

Country Link
US (1) US11122232B2 (en)
EP (1) EP3761631B1 (en)
JP (1) JP7099783B2 (en)
CN (1) CN108827461B (en)
SG (1) SG11202009813XA (en)
WO (1) WO2019205217A1 (en)

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CN108449557B (en) * 2018-03-23 2019-02-15 上海芯仑光电科技有限公司 Pixel Acquisition Circuit, light stream sensor and light stream and image information collecting system
US11521998B2 (en) * 2018-09-18 2022-12-06 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device
EP3882972A4 (en) 2018-11-16 2022-04-20 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device
JP2020088722A (en) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element and imaging device
CN109842767B (en) * 2019-01-09 2020-07-14 上海芯仑光电科技有限公司 Anti-flash circuit assembly and image sensor
CN109842768B (en) * 2019-01-29 2020-05-15 上海芯仑光电科技有限公司 Pixel acquisition circuit and image sensor
KR20210000985A (en) 2019-06-26 2021-01-06 삼성전자주식회사 Vision sensor, image processing device comprising thereof and operating method of vision sensor
CN110536083B (en) * 2019-08-30 2020-11-06 上海芯仑光电科技有限公司 Image sensor and image acquisition system
CN111107287B (en) * 2019-11-29 2021-06-04 豪威芯仑传感器(上海)有限公司 Pixel acquisition circuit and image sensor
US11516419B2 (en) 2021-01-22 2022-11-29 Omnivision Technologies, Inc. Digital time stamping design for event driven pixel

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US6253161B1 (en) * 1997-07-10 2001-06-26 Universite Laval Integrated motion vision sensor
JP3449468B2 (en) 1999-05-06 2003-09-22 日本電気株式会社 Solid-state imaging device and driving method thereof
US8553943B2 (en) * 2011-06-14 2013-10-08 Qualcomm Incorporated Content-adaptive systems, methods and apparatus for determining optical flow
KR20140056986A (en) 2012-11-02 2014-05-12 삼성전자주식회사 Motion sensor array device, depth sensing system and method using the same
US9852512B2 (en) * 2013-03-13 2017-12-26 Electronic Scripting Products, Inc. Reduced homography based on structural redundancy of conditioned motion
KR102347249B1 (en) * 2014-10-21 2022-01-04 삼성전자주식회사 Method and device to display screen in response to event related to external obejct
KR102248404B1 (en) * 2014-11-17 2021-05-07 삼성전자주식회사 Method and device for analyzing motion
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EP3281403A4 (en) * 2015-04-06 2018-03-07 Scope Technologies US Inc. Methods and apparatus for augmented reality applications
US9743024B2 (en) * 2015-07-01 2017-08-22 Massachusetts Institute Of Technology Method and apparatus for on-chip per-pixel pseudo-random time coded exposure
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CN106162000B (en) * 2016-07-08 2019-03-15 上海芯仑光电科技有限公司 Pixel Acquisition Circuit, imaging sensor and image capturing system
EP3267678B1 (en) * 2016-07-08 2022-10-05 OmniVision Sensor Solution (Shanghai) Co., Ltd Pixel acquisition circuit, image sensor and image acquisition system
CN106097699B (en) * 2016-07-25 2022-05-20 深圳市冠旭电子股份有限公司 Light control device and light control system
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CN108632546B (en) * 2017-03-17 2021-06-04 豪威芯仑传感器(上海)有限公司 Pixel acquisition circuit, optical flow sensor and image acquisition system
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US10706564B2 (en) * 2018-04-11 2020-07-07 Wisconsin Alumni Research Foundation Systems, methods, and media for determining object motion in three dimensions from light field image data

Also Published As

Publication number Publication date
EP3761631B1 (en) 2023-04-12
CN108827461A (en) 2018-11-16
EP3761631A4 (en) 2022-01-05
US20210037202A1 (en) 2021-02-04
US11122232B2 (en) 2021-09-14
WO2019205217A1 (en) 2019-10-31
JP7099783B2 (en) 2022-07-12
JP2021520699A (en) 2021-08-19
EP3761631A1 (en) 2021-01-06
CN108827461B (en) 2019-05-03

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