SG10201804906SA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10201804906SA SG10201804906SA SG10201804906SA SG10201804906SA SG10201804906SA SG 10201804906S A SG10201804906S A SG 10201804906SA SG 10201804906S A SG10201804906S A SG 10201804906SA SG 10201804906S A SG10201804906S A SG 10201804906SA SG 10201804906S A SG10201804906S A SG 10201804906SA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- processing method
- recess
- cutting
- wafer processing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
WAFER PROCESSING METHOD OF THE DISCLOSURE A wafer processing method for processing a wafer having devices on the front side is provided. The wafer processing method includes a back grinding step of grinding the wafer to form a recess and an annular reinforcing portion surrounding the recess on the back side of the wafer, and a dividing step of cutting the wafer along division lines formed on the front side of the wafer. In the back grinding step, a taper surface is formed between the bottom surface of the recess and the annular reinforcing portion. The taper surface is inclined with respect to a direction perpendicular to the bottom surface of the recess. In the dividing step, a cutting blade is lowered to start cutting at a position radially inside the outer circumference of the wafer and is subsequently raised to stop cutting at another position radially inside the outer circumference of the wafer. Fig. 4B
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017128922A JP2019012773A (en) | 2017-06-30 | 2017-06-30 | Processing method of wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804906SA true SG10201804906SA (en) | 2019-01-30 |
Family
ID=64661673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804906SA SG10201804906SA (en) | 2017-06-30 | 2018-06-08 | Wafer processing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10629445B2 (en) |
JP (1) | JP2019012773A (en) |
KR (1) | KR20190003348A (en) |
CN (1) | CN109216270A (en) |
DE (1) | DE102018210109A1 (en) |
MY (1) | MY189803A (en) |
SG (1) | SG10201804906SA (en) |
TW (1) | TW201905996A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7464472B2 (en) * | 2020-07-17 | 2024-04-09 | 株式会社ディスコ | Processing Equipment |
CN112599413B (en) * | 2021-03-04 | 2021-05-14 | 成都先进功率半导体股份有限公司 | Wafer chip cutting method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3811182A (en) * | 1972-03-31 | 1974-05-21 | Ibm | Object handling fixture, system, and process |
JPH091542A (en) * | 1995-06-23 | 1997-01-07 | Matsushita Electron Corp | Cutting method for thin plate-like raw material |
US6157213A (en) * | 1998-10-19 | 2000-12-05 | Xilinx, Inc. | Layout architecture and method for fabricating PLDs including multiple discrete devices formed on a single chip |
JP4154067B2 (en) | 1999-04-06 | 2008-09-24 | 株式会社ディスコ | Grinding equipment |
JP2004146487A (en) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | Method for manufacturing semiconductor device |
JP2007019379A (en) | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | Method for processing wafer |
JP4874602B2 (en) | 2005-08-26 | 2012-02-15 | 株式会社ディスコ | Adhesive tape used for wafer processing method and wafer processing method |
JP2009043992A (en) * | 2007-08-09 | 2009-02-26 | Disco Abrasive Syst Ltd | Treatment method for wafer |
JP5266869B2 (en) * | 2008-05-19 | 2013-08-21 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
WO2009141740A2 (en) * | 2008-05-23 | 2009-11-26 | Florian Bieck | Semiconductor wafer and method for producing the same |
JP2010062375A (en) * | 2008-09-04 | 2010-03-18 | Disco Abrasive Syst Ltd | Method of processing wafer |
JP2010186971A (en) * | 2009-02-13 | 2010-08-26 | Disco Abrasive Syst Ltd | Wafer processing method |
JP2011071287A (en) * | 2009-09-25 | 2011-04-07 | Disco Abrasive Syst Ltd | Method of processing wafer |
JP2011108746A (en) * | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | Method for processing wafer |
JP5964580B2 (en) * | 2011-12-26 | 2016-08-03 | 株式会社ディスコ | Wafer processing method |
JP6366351B2 (en) * | 2014-05-13 | 2018-08-01 | 株式会社ディスコ | Wafer processing method |
-
2017
- 2017-06-30 JP JP2017128922A patent/JP2019012773A/en active Pending
-
2018
- 2018-06-08 MY MYPI2018702271A patent/MY189803A/en unknown
- 2018-06-08 SG SG10201804906SA patent/SG10201804906SA/en unknown
- 2018-06-19 KR KR1020180070255A patent/KR20190003348A/en not_active Application Discontinuation
- 2018-06-21 DE DE102018210109.4A patent/DE102018210109A1/en active Pending
- 2018-06-25 CN CN201810661058.9A patent/CN109216270A/en active Pending
- 2018-06-27 US US16/020,577 patent/US10629445B2/en active Active
- 2018-06-28 TW TW107122402A patent/TW201905996A/en unknown
Also Published As
Publication number | Publication date |
---|---|
MY189803A (en) | 2022-03-08 |
DE102018210109A1 (en) | 2019-01-03 |
JP2019012773A (en) | 2019-01-24 |
CN109216270A (en) | 2019-01-15 |
KR20190003348A (en) | 2019-01-09 |
US10629445B2 (en) | 2020-04-21 |
TW201905996A (en) | 2019-02-01 |
US20190006185A1 (en) | 2019-01-03 |
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