SG10201803387WA - Vacuum chamber arrangement - Google Patents

Vacuum chamber arrangement

Info

Publication number
SG10201803387WA
SG10201803387WA SG10201803387WA SG10201803387WA SG10201803387WA SG 10201803387W A SG10201803387W A SG 10201803387WA SG 10201803387W A SG10201803387W A SG 10201803387WA SG 10201803387W A SG10201803387W A SG 10201803387WA SG 10201803387W A SG10201803387W A SG 10201803387WA
Authority
SG
Singapore
Prior art keywords
vacuum chamber
supply
arrangement
substrate
supply passage
Prior art date
Application number
SG10201803387WA
Inventor
Gottsmann Lutz
Laimer Georg
Melcher Jens
Original Assignee
Ardenne Asset Gmbh & Co Kg Von
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ardenne Asset Gmbh & Co Kg Von filed Critical Ardenne Asset Gmbh & Co Kg Von
Publication of SG10201803387WA publication Critical patent/SG10201803387WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Vacuum chamber arrangement 5 According to various embodiments, a vacuum chamber arrangement (10 0) can have the following: a vacuum chamber (102), which has a first supply passage (102v); a substrate holding arrangement (104) having a substrate holder (110) for holding and positioning at least one substrate, a vacuumtight 10 supply housing (108) for supplying the substrate holder (110) with at least one supply medium, wherein the supply housing (108) has a second supply passage (108v); a bearing arrangement (106), by means of which the substrate holding arrangement (104) is supported movably within the vacuum 15 chamber (102); and a supply hose (112), which links the first supply passage (102v) to the second supply passage (108v). Figure 1A
SG10201803387WA 2017-04-26 2018-04-23 Vacuum chamber arrangement SG10201803387WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017108962 2017-04-26
DE102017109820.8A DE102017109820B4 (en) 2017-04-26 2017-05-08 Vacuum chamber arrangement and its use

Publications (1)

Publication Number Publication Date
SG10201803387WA true SG10201803387WA (en) 2018-11-29

Family

ID=63797566

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803387WA SG10201803387WA (en) 2017-04-26 2018-04-23 Vacuum chamber arrangement

Country Status (4)

Country Link
US (2) US20180312970A1 (en)
CN (1) CN108796468B (en)
DE (1) DE102017109820B4 (en)
SG (1) SG10201803387WA (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017129603B4 (en) * 2017-09-27 2021-07-01 VON ARDENNE Asset GmbH & Co. KG Vacuum chamber arrangement and method for processing a substrate

Family Cites Families (27)

* Cited by examiner, † Cited by third party
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US3656454A (en) * 1970-11-23 1972-04-18 Air Reduction Vacuum coating apparatus
US4002141A (en) * 1975-11-26 1977-01-11 Airco, Inc. System for handling substrate holders for vacuum coating
US4239016A (en) 1978-04-21 1980-12-16 Ppg Industries, Inc. Apparatus for handling flexible sheet while applying graded shade band thereon
JPS5816078A (en) * 1981-07-17 1983-01-29 Toshiba Corp Plasma etching device
JPS6425979A (en) * 1988-05-11 1989-01-27 Hitachi Ltd Sputtering device of planar magnetron system
US5338913A (en) * 1992-12-28 1994-08-16 Tfi Telemark Electron beam gun with liquid cooled rotatable crucible
US6246204B1 (en) * 1994-06-27 2001-06-12 Nikon Corporation Electromagnetic alignment and scanning apparatus
DE19537092C1 (en) * 1995-10-05 1996-07-11 Ardenne Anlagentech Gmbh Multi-chamber electron beam vapour deposition unit
US6062798A (en) * 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US6183183B1 (en) * 1997-01-16 2001-02-06 Asm America, Inc. Dual arm linear hand-off wafer transfer assembly
DE19743800C1 (en) 1997-10-02 1999-02-04 Ardenne Anlagentech Gmbh Continuously operating vacuum coating installation
DE19850415C1 (en) 1998-11-02 2000-02-03 Ardenne Anlagentech Gmbh Substrate holder for multi chamber vacuum coating installations is a trolley consisting of transport and holding units which are movable on different roller conveyors and joined to one another by a flexible connector
AT408930B (en) * 1999-01-13 2002-04-25 Thallner Erich Apparatus for the chemical treatment of wafers
JP4383626B2 (en) 2000-04-13 2009-12-16 キヤノン株式会社 Positioning apparatus and exposure apparatus
DE102004006419A1 (en) * 2004-02-09 2005-09-08 Applied Films Gmbh & Co. Kg Energy and media connection for a multi-chamber coating system
JP3986513B2 (en) * 2004-08-05 2007-10-03 株式会社シンクロン Thin film forming equipment
US7286890B2 (en) * 2005-06-28 2007-10-23 Tokyo Electron Limited Transfer apparatus for target object
JP4616873B2 (en) * 2007-09-28 2011-01-19 東京エレクトロン株式会社 Semiconductor manufacturing apparatus, substrate holding method, and program
US8404047B2 (en) * 2008-09-16 2013-03-26 United Technologies Corporation Electron beam vapor deposition apparatus and method
KR102399769B1 (en) * 2010-12-29 2022-05-19 에바텍 아크티엔게젤샤프트 Vacuum Treatment Apparatus And Method For Manufacturing
EP2870625B1 (en) * 2012-07-09 2021-01-06 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Assembly and method for processing substrates
JP6094256B2 (en) * 2013-02-22 2017-03-15 日新イオン機器株式会社 Ion beam irradiation equipment
TWI506680B (en) * 2013-02-22 2015-11-01 Nissin Ion Equipment Co Ltd Substrate cooling means and irradiation ion beam
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TWI814621B (en) * 2013-12-13 2023-09-01 日商昕芙旎雅股份有限公司 porter room
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DE102017129603B4 (en) * 2017-09-27 2021-07-01 VON ARDENNE Asset GmbH & Co. KG Vacuum chamber arrangement and method for processing a substrate

Also Published As

Publication number Publication date
US11618950B2 (en) 2023-04-04
US20180312970A1 (en) 2018-11-01
CN108796468A (en) 2018-11-13
US20210207267A1 (en) 2021-07-08
CN108796468B (en) 2020-10-16
DE102017109820B4 (en) 2024-03-28
DE102017109820A1 (en) 2018-10-31

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