SG10201709550RA - Semiconductor device and method of forming encapsulated wafer level chip scale package (ewlcsp) - Google Patents

Semiconductor device and method of forming encapsulated wafer level chip scale package (ewlcsp)

Info

Publication number
SG10201709550RA
SG10201709550RA SG10201709550RA SG10201709550RA SG10201709550RA SG 10201709550R A SG10201709550R A SG 10201709550RA SG 10201709550R A SG10201709550R A SG 10201709550RA SG 10201709550R A SG10201709550R A SG 10201709550RA SG 10201709550R A SG10201709550R A SG 10201709550RA
Authority
SG
Singapore
Prior art keywords
ewlcsp
semiconductor device
wafer level
chip scale
scale package
Prior art date
Application number
SG10201709550RA
Inventor
Thomas J Strothmann
Seung Wook Yoon
Yaojian Lin
Original Assignee
Stats Chippac Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stats Chippac Pte Ltd filed Critical Stats Chippac Pte Ltd
Publication of SG10201709550RA publication Critical patent/SG10201709550RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
SG10201709550RA 2014-02-27 2015-02-23 Semiconductor device and method of forming encapsulated wafer level chip scale package (ewlcsp) SG10201709550RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461945739P 2014-02-27 2014-02-27
US14/627,347 US9704769B2 (en) 2014-02-27 2015-02-20 Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)

Publications (1)

Publication Number Publication Date
SG10201709550RA true SG10201709550RA (en) 2018-01-30

Family

ID=53882938

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201501282VA SG10201501282VA (en) 2014-02-27 2015-02-23 Semiconductor device and method of forming encapsulatedwafer level chip scale package (ewlcsp)
SG10201709550RA SG10201709550RA (en) 2014-02-27 2015-02-23 Semiconductor device and method of forming encapsulated wafer level chip scale package (ewlcsp)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201501282VA SG10201501282VA (en) 2014-02-27 2015-02-23 Semiconductor device and method of forming encapsulatedwafer level chip scale package (ewlcsp)

Country Status (3)

Country Link
US (3) US9704769B2 (en)
SG (2) SG10201501282VA (en)
TW (1) TWI721939B (en)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576919B2 (en) * 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US11445617B2 (en) 2011-10-31 2022-09-13 Unimicron Technology Corp. Package structure and manufacturing method thereof
TWI663693B (en) * 2018-04-10 2019-06-21 欣興電子股份有限公司 Package structure and manufacturing method thereof
US9704769B2 (en) * 2014-02-27 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)
TWI575676B (en) * 2014-11-17 2017-03-21 矽品精密工業股份有限公司 Electronic package structure and method of manufacture
TWI595613B (en) * 2014-11-18 2017-08-11 矽品精密工業股份有限公司 Semiconductor package and fabrication method thereof
DE102014118769B4 (en) * 2014-12-16 2017-11-23 Infineon Technologies Ag Pressure sensor module with a sensor chip and passive components within a common housing
US9449935B1 (en) * 2015-07-27 2016-09-20 Inotera Memories, Inc. Wafer level package and fabrication method thereof
US20170098589A1 (en) * 2015-10-05 2017-04-06 Mediatek Inc. Fan-out wafer level package structure
US20170098628A1 (en) * 2015-10-05 2017-04-06 Mediatek Inc. Semiconductor package structure and method for forming the same
US10141291B2 (en) * 2015-11-30 2018-11-27 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of manufacturing the same
DE102015120745B4 (en) * 2015-11-30 2021-12-09 Infineon Technologies Austria Ag Chip protective packaging and processes
DE102015122282A1 (en) * 2015-12-18 2017-06-22 Infineon Technologies Ag Electronic component and method for its production
US9842776B2 (en) * 2016-01-13 2017-12-12 Nxp B.V. Integrated circuits and molding approaches therefor
US10504827B2 (en) * 2016-06-03 2019-12-10 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10181653B2 (en) 2016-07-21 2019-01-15 Infineon Technologies Ag Radio frequency system for wearable device
US10218407B2 (en) 2016-08-08 2019-02-26 Infineon Technologies Ag Radio frequency system and method for wearable device
US9978644B1 (en) * 2016-09-07 2018-05-22 Amkor Technology, Inc. Semiconductor device and manufacturing method
DE102017215354B4 (en) 2016-10-14 2021-10-07 Infineon Technologies Ag SEMICONDUCTORS AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENTS
US9892989B1 (en) * 2016-12-08 2018-02-13 Nxp B.V. Wafer-level chip scale package with side protection
US20180182682A1 (en) * 2016-12-25 2018-06-28 Powertech Technology Inc. Semiconductor device package with stress relief layer
US10466772B2 (en) 2017-01-09 2019-11-05 Infineon Technologies Ag System and method of gesture detection for a remote device
US10505255B2 (en) 2017-01-30 2019-12-10 Infineon Technologies Ag Radio frequency device packages and methods of formation thereof
KR102399356B1 (en) 2017-03-10 2022-05-19 삼성전자주식회사 Substrate, method of sawing substrate, and semiconductor device
US10177011B2 (en) * 2017-04-13 2019-01-08 Powertech Technology Inc. Chip packaging method by using a temporary carrier for flattening a multi-layer structure
JP2018206797A (en) 2017-05-30 2018-12-27 アオイ電子株式会社 Semiconductor device and semiconductor device manufacturing method
US20180350708A1 (en) * 2017-06-06 2018-12-06 Powertech Technology Inc. Package structure and manufacturing method thereof
US10602548B2 (en) 2017-06-22 2020-03-24 Infineon Technologies Ag System and method for gesture sensing
CN109300794B (en) * 2017-07-25 2021-02-02 中芯国际集成电路制造(上海)有限公司 Package structure and method for forming the same
US10504871B2 (en) 2017-12-11 2019-12-10 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10746625B2 (en) 2017-12-22 2020-08-18 Infineon Technologies Ag System and method of monitoring a structural object using a millimeter-wave radar sensor
US11278241B2 (en) 2018-01-16 2022-03-22 Infineon Technologies Ag System and method for vital signal sensing using a millimeter-wave radar sensor
US11346936B2 (en) 2018-01-16 2022-05-31 Infineon Technologies Ag System and method for vital signal sensing using a millimeter-wave radar sensor
US10795012B2 (en) 2018-01-22 2020-10-06 Infineon Technologies Ag System and method for human behavior modelling and power control using a millimeter-wave radar sensor
US10576328B2 (en) 2018-02-06 2020-03-03 Infineon Technologies Ag System and method for contactless sensing on a treadmill
US10910287B2 (en) * 2018-02-28 2021-02-02 Stmicroelectronics Pte Ltd Semiconductor package with protected sidewall and method of forming the same
WO2019178355A1 (en) * 2018-03-16 2019-09-19 Vesper Technologies, Inc. Transducer system with configurable acoustic overload point
JP7075791B2 (en) * 2018-03-20 2022-05-26 株式会社ディスコ Semiconductor package manufacturing method
US10705198B2 (en) 2018-03-27 2020-07-07 Infineon Technologies Ag System and method of monitoring an air flow using a millimeter-wave radar sensor
US10775482B2 (en) 2018-04-11 2020-09-15 Infineon Technologies Ag Human detection and identification in a setting using millimeter-wave radar
US10761187B2 (en) 2018-04-11 2020-09-01 Infineon Technologies Ag Liquid detection using millimeter-wave radar sensor
US10794841B2 (en) 2018-05-07 2020-10-06 Infineon Technologies Ag Composite material structure monitoring system
US10399393B1 (en) 2018-05-29 2019-09-03 Infineon Technologies Ag Radar sensor system for tire monitoring
US10903567B2 (en) 2018-06-04 2021-01-26 Infineon Technologies Ag Calibrating a phased array system
US11416077B2 (en) 2018-07-19 2022-08-16 Infineon Technologies Ag Gesture detection system and method using a radar sensor
US10928501B2 (en) 2018-08-28 2021-02-23 Infineon Technologies Ag Target detection in rainfall and snowfall conditions using mmWave radar
US11183772B2 (en) 2018-09-13 2021-11-23 Infineon Technologies Ag Embedded downlight and radar system
US11125869B2 (en) 2018-10-16 2021-09-21 Infineon Technologies Ag Estimating angle of human target using mmWave radar
US10825796B2 (en) * 2018-10-22 2020-11-03 Nanya Technology Corporation Semiconductor package and method for manufacturing the same
US11360185B2 (en) 2018-10-24 2022-06-14 Infineon Technologies Ag Phase coded FMCW radar
US11397239B2 (en) 2018-10-24 2022-07-26 Infineon Technologies Ag Radar sensor FSM low power mode
EP3654053A1 (en) 2018-11-14 2020-05-20 Infineon Technologies AG Package with acoustic sensing device(s) and millimeter wave sensing elements
US11087115B2 (en) 2019-01-22 2021-08-10 Infineon Technologies Ag User authentication using mm-Wave sensor for automotive radar systems
EP3939080A4 (en) * 2019-03-11 2023-01-11 HRL Laboratories, LLC Method to protect die during metal-embedded chip assembly (meca) process
US11355838B2 (en) 2019-03-18 2022-06-07 Infineon Technologies Ag Integration of EBG structures (single layer/multi-layer) for isolation enhancement in multilayer embedded packaging technology at mmWave
US11126885B2 (en) 2019-03-21 2021-09-21 Infineon Technologies Ag Character recognition in air-writing based on network of radars
US11454696B2 (en) 2019-04-05 2022-09-27 Infineon Technologies Ag FMCW radar integration with communication system
US11694906B2 (en) 2019-09-03 2023-07-04 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices and methods of manufacturing semiconductor devices
US11121111B2 (en) 2019-09-09 2021-09-14 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same
US11327167B2 (en) 2019-09-13 2022-05-10 Infineon Technologies Ag Human target tracking system and method
US11774592B2 (en) 2019-09-18 2023-10-03 Infineon Technologies Ag Multimode communication and radar system resource allocation
KR102543996B1 (en) * 2019-09-20 2023-06-16 주식회사 네패스 Semiconductor package and manufacturing method thereof
US11435443B2 (en) 2019-10-22 2022-09-06 Infineon Technologies Ag Integration of tracking with classifier in mmwave radar
US11158551B2 (en) * 2020-01-07 2021-10-26 Dialog Semiconductor (Uk) Limited Modular WLCSP die daisy chain design for multiple die sizes
US11808883B2 (en) 2020-01-31 2023-11-07 Infineon Technologies Ag Synchronization of multiple mmWave devices
US11614516B2 (en) 2020-02-19 2023-03-28 Infineon Technologies Ag Radar vital signal tracking using a Kalman filter
US11915949B2 (en) 2020-02-21 2024-02-27 Amkor Technology Singapore Holding Pte. Ltd. Hybrid panel method of manufacturing electronic devices and electronic devices manufactured thereby
US11605552B2 (en) * 2020-02-21 2023-03-14 Amkor Technology Singapore Holding Pte. Ltd. Hybrid panel method of manufacturing electronic devices and electronic devices manufactured thereby
US11585891B2 (en) 2020-04-20 2023-02-21 Infineon Technologies Ag Radar-based vital sign estimation
US11567185B2 (en) 2020-05-05 2023-01-31 Infineon Technologies Ag Radar-based target tracking using motion detection
CN111584478B (en) * 2020-05-22 2022-02-18 甬矽电子(宁波)股份有限公司 Laminated chip packaging structure and laminated chip packaging method
US11774553B2 (en) 2020-06-18 2023-10-03 Infineon Technologies Ag Parametric CNN for radar processing
US11704917B2 (en) 2020-07-09 2023-07-18 Infineon Technologies Ag Multi-sensor analysis of food
US11837518B2 (en) * 2020-08-26 2023-12-05 Texas Instruments Incorporated Coated semiconductor dies
US11614511B2 (en) 2020-09-17 2023-03-28 Infineon Technologies Ag Radar interference mitigation
US11719787B2 (en) 2020-10-30 2023-08-08 Infineon Technologies Ag Radar-based target set generation
US11719805B2 (en) 2020-11-18 2023-08-08 Infineon Technologies Ag Radar based tracker using empirical mode decomposition (EMD) and invariant feature transform (IFT)
US12021013B2 (en) * 2021-01-29 2024-06-25 Mediatek Inc. Ball pad design for semiconductor packages
US11662430B2 (en) 2021-03-17 2023-05-30 Infineon Technologies Ag MmWave radar testing
US11950895B2 (en) 2021-05-28 2024-04-09 Infineon Technologies Ag Radar sensor system for blood pressure sensing, and associated method
WO2023272643A1 (en) * 2021-06-30 2023-01-05 深南电路股份有限公司 Package chip and manufacturing method therefor, and rewired package chip and manufacturing method therefor

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1335422B1 (en) 1995-03-24 2013-01-16 Shinko Electric Industries Co., Ltd. Process for making a chip sized semiconductor device
JP3356921B2 (en) 1995-03-24 2002-12-16 新光電気工業株式会社 Semiconductor device and method of manufacturing the same
JP3352352B2 (en) 1997-03-31 2002-12-03 新光電気工業株式会社 Plating apparatus, plating method and bump forming method
US6023094A (en) 1998-01-14 2000-02-08 National Semiconductor Corporation Semiconductor wafer having a bottom surface protective coating
EP1050905B1 (en) 1999-05-07 2017-06-21 Shinko Electric Industries Co. Ltd. Method of producing a semiconductor device with insulating layer
JP3544362B2 (en) 2001-03-21 2004-07-21 リンテック株式会社 Method for manufacturing semiconductor chip
US6734532B2 (en) 2001-12-06 2004-05-11 Texas Instruments Incorporated Back side coating of semiconductor wafers
US6709953B2 (en) 2002-01-31 2004-03-23 Infineon Technologies Ag Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
US6916688B1 (en) 2002-12-05 2005-07-12 National Semiconductor Corporation Apparatus and method for a wafer level chip scale package heat sink
US7256074B2 (en) 2003-10-15 2007-08-14 Micron Technology, Inc. Methods for wafer-level packaging of microelectronic devices and microelectronic devices formed by such methods
JP3929966B2 (en) 2003-11-25 2007-06-13 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
US7135385B1 (en) 2004-04-23 2006-11-14 National Semiconductor Corporation Semiconductor devices having a back surface protective coating
US7109587B1 (en) 2004-05-25 2006-09-19 National Semiconductor Corporation Apparatus and method for enhanced thermal conductivity packages for high powered semiconductor devices
US8575018B2 (en) 2006-02-07 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming bump structure with multi-layer UBM around bump formation area
TWI345276B (en) * 2007-12-20 2011-07-11 Chipmos Technologies Inc Dice rearrangement package structure using layout process to form a compliant configuration
US8327684B2 (en) 2008-10-21 2012-12-11 Teledyne Scientific & Imaging, Llc Method for adjusting resonance frequencies of a vibrating microelectromechanical device
US7642128B1 (en) 2008-12-12 2010-01-05 Stats Chippac, Ltd. Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP
US8125072B2 (en) * 2009-08-13 2012-02-28 Infineon Technologies Ag Device including a ring-shaped metal structure and method
JP5636669B2 (en) 2009-11-30 2014-12-10 キョーラク株式会社 Manufacturing method of foam molded product
US9196509B2 (en) * 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
US9576919B2 (en) * 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US8258633B2 (en) 2010-03-31 2012-09-04 Infineon Technologies Ag Semiconductor package and multichip arrangement having a polymer layer and an encapsulant
JP5584011B2 (en) * 2010-05-10 2014-09-03 新光電気工業株式会社 Manufacturing method of semiconductor package
TWI414027B (en) * 2010-06-30 2013-11-01 矽品精密工業股份有限公司 Chip-sized package and fabrication method thereof
US8492203B2 (en) 2011-01-21 2013-07-23 Stats Chippac, Ltd. Semiconductor device and method for forming semiconductor package having build-up interconnect structure over semiconductor die with different CTE insulating layers
US8367475B2 (en) 2011-03-25 2013-02-05 Broadcom Corporation Chip scale package assembly in reconstitution panel process format
US8642385B2 (en) 2011-08-09 2014-02-04 Alpha & Omega Semiconductor, Inc. Wafer level package structure and the fabrication method thereof
US8664040B2 (en) 2011-12-20 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Exposing connectors in packages through selective treatment
TWI463619B (en) 2012-06-22 2014-12-01 矽品精密工業股份有限公司 Semiconductor package and method of forming the same
US9620413B2 (en) 2012-10-02 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using a standardized carrier in semiconductor packaging
US9496195B2 (en) 2012-10-02 2016-11-15 STATS ChipPAC Pte. Ltd. Semiconductor device and method of depositing encapsulant along sides and surface edge of semiconductor die in embedded WLCSP
US9385075B2 (en) * 2012-10-26 2016-07-05 Infineon Technologies Ag Glass carrier with embedded semiconductor device and metal layers on the top surface
US9704824B2 (en) 2013-01-03 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming embedded wafer level chip scale packages
US9721862B2 (en) 2013-01-03 2017-08-01 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using a standardized carrier to form embedded wafer level chip scale packages
WO2014135938A1 (en) * 2013-03-06 2014-09-12 Bombardier Inc. Aircraft drainage system
US9620457B2 (en) * 2013-11-26 2017-04-11 Infineon Technologies Ag Semiconductor device packaging
US9385040B2 (en) * 2014-02-19 2016-07-05 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing a semiconductor device
US9704769B2 (en) * 2014-02-27 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)

Also Published As

Publication number Publication date
US20200006177A1 (en) 2020-01-02
TW201533813A (en) 2015-09-01
SG10201501282VA (en) 2015-09-29
US20170278765A1 (en) 2017-09-28
TWI721939B (en) 2021-03-21
US9704769B2 (en) 2017-07-11
US10446459B2 (en) 2019-10-15
US20150243575A1 (en) 2015-08-27
US11257729B2 (en) 2022-02-22

Similar Documents

Publication Publication Date Title
SG10201709550RA (en) Semiconductor device and method of forming encapsulated wafer level chip scale package (ewlcsp)
SG10201506143RA (en) Semiconductor device and method of forming double-sidedfan-out wafer level package
SG10201504476WA (en) Semiconductor packages and methods of packaging semiconductor devices
TWI560841B (en) Wafer level package and fabrication method thereof
SG10202005212QA (en) Composition for etching and method for manufacturing semiconductor device using same
SG10201800413PA (en) Semiconductor device and method of forming embeddedwafer level chip scale packages
SG10201707563VA (en) Method of manufacturing semiconductor package
SG2013080122A (en) Semiconductor device and method of using a standardized carrier to form embedded wafer level chip scale packages
EP3266043C0 (en) Electromagnetically shielded semiconductor chip package and manufacturing method thereof
HK1208957A1 (en) Manufacturing method of semiconductor device and semiconductor device
SG10201508477VA (en) Methods for singulating semiconductor wafer
TWI562323B (en) Semiconductor device package and method of manufacturing the same
TWI560822B (en) Wafer level package and fabrication method thereof
HK1245999A1 (en) Semiconductor device and method of manufacturing semiconductor device
SG10201605337UA (en) Manufacturing method of semiconductor device
SG11201509734YA (en) Semiconductor wafer protective film and method of manufacturing semiconductor device
HK1216358A1 (en) Semiconductor device and method of manufacturing same
SG10201608773PA (en) Method Of Packaging Semiconductor Device
SG11201509513SA (en) Bonding wire for semiconductor device use and method of production of same
SG10201700762PA (en) Semiconductor package and method of manufacturing semiconductor package
TWI560758B (en) Manufacturing method of wafer level chip scale package structure
HK1223733A1 (en) Semiconductor device and method of manufacturing semiconductor device
GB2562918B (en) Semiconductor device and method of manufacturing semiconductor device
TWI560827B (en) Semiconductor package and its carrier structure and method of manufacture
SG10201601865XA (en) Semiconductor device and method of manufacture