SG10201707317RA - Systems and methods for reducing effluent build-up in a pumping exhaust system - Google Patents

Systems and methods for reducing effluent build-up in a pumping exhaust system

Info

Publication number
SG10201707317RA
SG10201707317RA SG10201707317RA SG10201707317RA SG10201707317RA SG 10201707317R A SG10201707317R A SG 10201707317RA SG 10201707317R A SG10201707317R A SG 10201707317RA SG 10201707317R A SG10201707317R A SG 10201707317RA SG 10201707317R A SG10201707317R A SG 10201707317RA
Authority
SG
Singapore
Prior art keywords
build
systems
methods
exhaust system
pumping exhaust
Prior art date
Application number
SG10201707317RA
Other languages
English (en)
Inventor
Xavier Antonio
Goza Steven
Chandrasekharan Ramesh
Lavoie Adrien
NESMITH Joseph
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201707317RA publication Critical patent/SG10201707317RA/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
SG10201707317RA 2016-09-13 2017-09-08 Systems and methods for reducing effluent build-up in a pumping exhaust system SG10201707317RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/263,838 US11332824B2 (en) 2016-09-13 2016-09-13 Systems and methods for reducing effluent build-up in a pumping exhaust system

Publications (1)

Publication Number Publication Date
SG10201707317RA true SG10201707317RA (en) 2018-04-27

Family

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SG10202102425UA SG10202102425UA (en) 2016-09-13 2017-09-08 Systems and methods for reducing effluent build-up in a pumping exhaust system

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Country Status (6)

Country Link
US (2) US11332824B2 (https=)
JP (1) JP2018050041A (https=)
KR (2) KR102425423B1 (https=)
CN (2) CN117165920A (https=)
SG (2) SG10201707317RA (https=)
TW (1) TWI777975B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016182648A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method for controlling a processing system
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
CN108591826A (zh) * 2018-04-23 2018-09-28 睿力集成电路有限公司 气体处理系统及处理方法
US10889891B2 (en) 2018-05-04 2021-01-12 Applied Materials, Inc. Apparatus for gaseous byproduct abatement and foreline cleaning
US12025484B2 (en) * 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102777591B1 (ko) * 2018-06-15 2025-03-06 램 리써치 코포레이션 기판 프로세싱 시스템의 배기부의 펌프로부터 증착물들을 제거하기 위한 세정 시스템
US10388513B1 (en) * 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
KR102889276B1 (ko) * 2019-03-11 2025-11-20 램 리써치 코포레이션 플라즈마 챔버들을 세정하기 위한 장치
US20210071296A1 (en) * 2019-09-06 2021-03-11 Asm Ip Holding B.V. Exhaust component cleaning method and substrate processing apparatus including exhaust component
US11779949B2 (en) 2019-10-30 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process chamber contamination prevention system
KR20230025590A (ko) * 2021-08-13 2023-02-22 삼성디스플레이 주식회사 배출 방법, 배출 시스템 및 이를 포함하는 기판 처리 장치
KR20240115465A (ko) * 2023-01-19 2024-07-26 삼성전자주식회사 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치
JP2025035359A (ja) * 2023-09-01 2025-03-13 株式会社荏原製作所 除害反応器への排ガスの流路システム
WO2025250598A1 (en) * 2024-05-30 2025-12-04 Lam Research Corporation Reacting radical species with undeposited film precursor

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125207B2 (ja) * 1995-07-07 2001-01-15 東京エレクトロン株式会社 真空処理装置
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
DE19959814B4 (de) * 1999-12-11 2005-09-15 Benteler Ag Achsträger für Kraftfahrzeuge
JP2001185539A (ja) * 1999-12-24 2001-07-06 Toshiba Corp ガス回収システムおよびガス回収方法
US6329297B1 (en) * 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US6896764B2 (en) * 2001-11-28 2005-05-24 Tokyo Electron Limited Vacuum processing apparatus and control method thereof
JP3527915B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
KR100479627B1 (ko) * 2002-05-25 2005-04-06 유니셈 주식회사 폐가스 처리용 습식 전처리 장치 및 그 전처리 방법
KR100447284B1 (ko) * 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
TW200734482A (en) * 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
GB0505674D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Trap device
CN101171365B (zh) * 2005-05-09 2010-05-19 Asm吉尼泰克韩国株式会社 多入口原子层沉积反应器
US8193642B2 (en) * 2005-06-20 2012-06-05 Tohoku University Interlayer insulating film, interconnection structure, and methods of manufacturing the same
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
US20080081130A1 (en) * 2006-09-29 2008-04-03 Applied Materials, Inc. Treatment of effluent in the deposition of carbon-doped silicon
KR101551170B1 (ko) * 2007-05-25 2015-09-09 어플라이드 머티어리얼스, 인코포레이티드 저감 시스템의 효율적 작동을 위한 방법들 및 장치
US20090017206A1 (en) * 2007-06-16 2009-01-15 Applied Materials, Inc. Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes
KR20090001030A (ko) * 2007-06-29 2009-01-08 삼성전자주식회사 반도체 제조설비
KR20150036815A (ko) 2007-09-18 2015-04-07 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소 함유 막의 형성 방법
US7967913B2 (en) * 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
US20100119420A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Abatement system having enhanced effluent scrub and moisture control
CN102396093B (zh) * 2009-02-17 2016-02-17 麦卡利斯特技术有限责任公司 在电解过程中用于控制成核的装置和方法
US8747762B2 (en) * 2009-12-03 2014-06-10 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
JPWO2012014497A1 (ja) * 2010-07-30 2013-09-12 Ｊｘ日鉱日石エネルギー株式会社 排ガス処理システム
KR101597008B1 (ko) * 2010-08-05 2016-02-23 가부시키가이샤 에바라 세이사꾸쇼 배기 시스템
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US9029264B2 (en) * 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP6061545B2 (ja) * 2012-08-10 2017-01-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US9230780B2 (en) * 2014-03-06 2016-01-05 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
US9478408B2 (en) * 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
WO2017189194A1 (en) * 2016-04-26 2017-11-02 Applied Materials, Inc. Temperature controlled remote plasma clean for exhaust deposit removal
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system

Also Published As

Publication number Publication date
KR20220106941A (ko) 2022-08-01
US11332824B2 (en) 2022-05-17
CN107863307A (zh) 2018-03-30
US20180073137A1 (en) 2018-03-15
KR20180029865A (ko) 2018-03-21
US12049698B2 (en) 2024-07-30
SG10202102425UA (en) 2021-04-29
KR102425423B1 (ko) 2022-07-25
TW201825776A (zh) 2018-07-16
KR102549682B1 (ko) 2023-06-29
US20220259725A1 (en) 2022-08-18
CN117165920A (zh) 2023-12-05
TWI777975B (zh) 2022-09-21
CN107863307B (zh) 2023-08-08
JP2018050041A (ja) 2018-03-29

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