CN117165920A - 用于减少在抽吸排气系统中流出物积聚的系统和方法 - Google Patents

用于减少在抽吸排气系统中流出物积聚的系统和方法 Download PDF

Info

Publication number
CN117165920A
CN117165920A CN202310877658.XA CN202310877658A CN117165920A CN 117165920 A CN117165920 A CN 117165920A CN 202310877658 A CN202310877658 A CN 202310877658A CN 117165920 A CN117165920 A CN 117165920A
Authority
CN
China
Prior art keywords
gas
cleaning
flow rate
pump
inert diluent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310877658.XA
Other languages
English (en)
Chinese (zh)
Inventor
安东尼奥·泽维尔
史蒂文·戈扎
拉梅什·钱德拉赛卡兰
阿德里安·拉瓦伊
约瑟夫·内史密斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN117165920A publication Critical patent/CN117165920A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
CN202310877658.XA 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法 Pending CN117165920A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/263,838 2016-09-13
US15/263,838 US11332824B2 (en) 2016-09-13 2016-09-13 Systems and methods for reducing effluent build-up in a pumping exhaust system
CN201710822517.2A CN107863307B (zh) 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201710822517.2A Division CN107863307B (zh) 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法

Publications (1)

Publication Number Publication Date
CN117165920A true CN117165920A (zh) 2023-12-05

Family

ID=61559644

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202310877658.XA Pending CN117165920A (zh) 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法
CN201710822517.2A Active CN107863307B (zh) 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710822517.2A Active CN107863307B (zh) 2016-09-13 2017-09-13 用于减少在抽吸排气系统中流出物积聚的系统和方法

Country Status (6)

Country Link
US (2) US11332824B2 (https=)
JP (1) JP2018050041A (https=)
KR (2) KR102425423B1 (https=)
CN (2) CN117165920A (https=)
SG (2) SG10201707317RA (https=)
TW (1) TWI777975B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016182648A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method for controlling a processing system
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
CN108591826A (zh) * 2018-04-23 2018-09-28 睿力集成电路有限公司 气体处理系统及处理方法
US10889891B2 (en) 2018-05-04 2021-01-12 Applied Materials, Inc. Apparatus for gaseous byproduct abatement and foreline cleaning
US12025484B2 (en) * 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
WO2019241718A1 (en) * 2018-06-15 2019-12-19 Lam Research Corporation Cleaning system for removing deposits from pump in an exhaust of a substrate processing system
US10388513B1 (en) * 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
SG11202109797SA (en) * 2019-03-11 2021-10-28 Lam Res Corp Apparatus for cleaning plasma chambers
US20210071296A1 (en) * 2019-09-06 2021-03-11 Asm Ip Holding B.V. Exhaust component cleaning method and substrate processing apparatus including exhaust component
US11779949B2 (en) * 2019-10-30 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process chamber contamination prevention system
KR20230025590A (ko) * 2021-08-13 2023-02-22 삼성디스플레이 주식회사 배출 방법, 배출 시스템 및 이를 포함하는 기판 처리 장치
KR20240115465A (ko) * 2023-01-19 2024-07-26 삼성전자주식회사 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치
JP2025035359A (ja) * 2023-09-01 2025-03-13 株式会社荏原製作所 除害反応器への排ガスの流路システム
WO2025250598A1 (en) * 2024-05-30 2025-12-04 Lam Research Corporation Reacting radical species with undeposited film precursor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6329297B1 (en) * 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US20100095979A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
CN105316653A (zh) * 2014-06-06 2016-02-10 朗姆研究公司 用rf等离子体循环和清洗去除处理室颗粒的系统和方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125207B2 (ja) * 1995-07-07 2001-01-15 東京エレクトロン株式会社 真空処理装置
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
DE19959814B4 (de) * 1999-12-11 2005-09-15 Benteler Ag Achsträger für Kraftfahrzeuge
JP2001185539A (ja) * 1999-12-24 2001-07-06 Toshiba Corp ガス回収システムおよびガス回収方法
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US6896764B2 (en) * 2001-11-28 2005-05-24 Tokyo Electron Limited Vacuum processing apparatus and control method thereof
JP3527915B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
KR100479627B1 (ko) * 2002-05-25 2005-04-06 유니셈 주식회사 폐가스 처리용 습식 전처리 장치 및 그 전처리 방법
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
WO2006102318A2 (en) * 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
GB0505674D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Trap device
CN101696494B (zh) * 2005-05-09 2011-11-16 Asm吉尼泰克韩国株式会社 反应物沉积方法
JP4993607B2 (ja) * 2005-06-20 2012-08-08 国立大学法人東北大学 層間絶縁膜および配線構造と、それらの製造方法
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
US20080081130A1 (en) * 2006-09-29 2008-04-03 Applied Materials, Inc. Treatment of effluent in the deposition of carbon-doped silicon
EP2150360A4 (en) * 2007-05-25 2013-01-23 Applied Materials Inc METHOD AND DEVICE FOR EFFICIENT OPERATION OF A REDUCTION SYSTEM
US20090017206A1 (en) * 2007-06-16 2009-01-15 Applied Materials, Inc. Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes
KR20090001030A (ko) * 2007-06-29 2009-01-08 삼성전자주식회사 반도체 제조설비
CN101889331A (zh) * 2007-09-18 2010-11-17 乔治洛德方法研究和开发液化空气有限公司 形成含硅膜的方法
US20100119420A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Abatement system having enhanced effluent scrub and moisture control
AU2010216051B2 (en) * 2009-02-17 2012-10-11 Mcalister Technologies, Llc Apparatus and method for controlling nucleation during electrolysis
US8747762B2 (en) * 2009-12-03 2014-06-10 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
TW201216397A (en) * 2010-07-30 2012-04-16 Jx Nippon Oil & Amp Energy Corp Discharge gas treating system
KR101597008B1 (ko) * 2010-08-05 2016-02-23 가부시키가이샤 에바라 세이사꾸쇼 배기 시스템
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US9029264B2 (en) * 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP6061545B2 (ja) * 2012-08-10 2017-01-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
US9230780B2 (en) * 2014-03-06 2016-01-05 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
JP6924775B2 (ja) * 2016-04-26 2021-08-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6329297B1 (en) * 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US20100095979A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
CN105316653A (zh) * 2014-06-06 2016-02-10 朗姆研究公司 用rf等离子体循环和清洗去除处理室颗粒的系统和方法

Also Published As

Publication number Publication date
US12049698B2 (en) 2024-07-30
US20220259725A1 (en) 2022-08-18
TWI777975B (zh) 2022-09-21
US11332824B2 (en) 2022-05-17
KR20220106941A (ko) 2022-08-01
KR102425423B1 (ko) 2022-07-25
KR102549682B1 (ko) 2023-06-29
JP2018050041A (ja) 2018-03-29
KR20180029865A (ko) 2018-03-21
US20180073137A1 (en) 2018-03-15
TW201825776A (zh) 2018-07-16
SG10201707317RA (en) 2018-04-27
SG10202102425UA (en) 2021-04-29
CN107863307B (zh) 2023-08-08
CN107863307A (zh) 2018-03-30

Similar Documents

Publication Publication Date Title
US12049698B2 (en) Systems and methods for reducing effluent build-up in a pumping exhaust system
KR102762669B1 (ko) 동시에 발생하는 인시츄 플라즈마 소스 및 리모트 플라즈마 소스를 사용한 신속한 챔버 세정
CN112313785B (zh) 去除金属氧化物膜的温度控制系统和方法
US11959172B2 (en) Substrate processing systems including gas delivery system with reduced dead legs
KR102775291B1 (ko) 원자층 증착 동안 화학물질들의 제어된 분리 및 전달을 통해 저 디펙트 프로세싱을 가능하게 하는 시스템들 및 방법들
KR20250174991A (ko) 고 에칭 선택도, 저 응력 애시 가능 탄소 하드 마스크
US10323323B2 (en) Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition
US9691590B2 (en) Selective removal of boron doped carbon hard mask layers
US20240395513A1 (en) Apparatus for cleaning plasma chambers
KR102510611B1 (ko) 저 압축 응력, 고 막 (film) 안정성 및 저 수축성을 가진 두꺼운 테트라에틸 오르토실리케이트 막을 고 증착 레이트로 증착하기 위한 방법
WO2025096119A1 (en) Vapor delivery system with charge volume container
TW201945087A (zh) 使用並行的原位及遠程電漿源之快速腔室清潔
TW201945587A (zh) 具有低壓應力、高膜穩定性及低收縮率之高沉積率厚四乙基正矽酸鹽膜的沉積方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20231205