SG10201702291PA - Plasma Processing Method - Google Patents
Plasma Processing MethodInfo
- Publication number
- SG10201702291PA SG10201702291PA SG10201702291PA SG10201702291PA SG10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- plasma processing
- plasma
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016056943A JP6378234B2 (ja) | 2016-03-22 | 2016-03-22 | プラズマ処理方法及びプラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201702291PA true SG10201702291PA (en) | 2017-10-30 |
Family
ID=59898100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702291PA SG10201702291PA (en) | 2016-03-22 | 2017-03-21 | Plasma Processing Method |
Country Status (6)
Country | Link |
---|---|
US (1) | US9824864B2 (ja) |
JP (1) | JP6378234B2 (ja) |
KR (1) | KR102222933B1 (ja) |
CN (1) | CN107221494B (ja) |
SG (1) | SG10201702291PA (ja) |
TW (1) | TWI730062B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11150283B2 (en) * | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
US11042140B2 (en) * | 2018-06-26 | 2021-06-22 | Mks Instruments, Inc. | Adaptive control for a power generator |
KR102201890B1 (ko) * | 2018-10-05 | 2021-01-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US11322336B2 (en) | 2018-10-05 | 2022-05-03 | Semes Co., Ltd. | Apparatus and method for treating substrate |
JP7250663B2 (ja) * | 2018-12-19 | 2023-04-03 | 東京エレクトロン株式会社 | プラズマ処理装置及びインピーダンスの整合方法 |
WO2020012907A1 (ja) * | 2019-06-20 | 2020-01-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
WO2024070580A1 (ja) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及び電源システム |
WO2024070578A1 (ja) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及び電源システム |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
JP3277394B2 (ja) * | 1992-12-04 | 2002-04-22 | ソニー株式会社 | 半導体装置の製造方法 |
US5793162A (en) * | 1995-12-29 | 1998-08-11 | Lam Research Corporation | Apparatus for controlling matching network of a vacuum plasma processor and memory for same |
US5689215A (en) * | 1996-05-23 | 1997-11-18 | Lam Research Corporation | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
US7199328B2 (en) | 2001-08-29 | 2007-04-03 | Tokyo Electron Limited | Apparatus and method for plasma processing |
JP4024053B2 (ja) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | 高周波プラズマ処理方法及び高周波プラズマ処理装置 |
JP3574651B2 (ja) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
CN100570805C (zh) * | 2003-09-22 | 2009-12-16 | Mks仪器股份有限公司 | 避免射频等离子加工中的不稳定性的方法和装置 |
US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20070066038A1 (en) * | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
JP2008118017A (ja) * | 2006-11-07 | 2008-05-22 | Hitachi High-Technologies Corp | プラズマ処理方法および処理装置 |
US20090272717A1 (en) * | 2008-03-21 | 2009-11-05 | Applied Materials, Inc. | Method and apparatus of a substrate etching system and process |
JP5222598B2 (ja) * | 2008-03-25 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマ処理装置及び給電棒 |
US8018164B2 (en) * | 2008-05-29 | 2011-09-13 | Applied Materials, Inc. | Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources |
US20090308734A1 (en) * | 2008-06-17 | 2009-12-17 | Schneider Automation Inc. | Apparatus and Method for Wafer Level Arc Detection |
US20130048082A1 (en) * | 2011-08-22 | 2013-02-28 | Mirzafer Abatchev | System, method and apparatus for real time control of rapid alternating processes (rap) |
JP5867701B2 (ja) * | 2011-12-15 | 2016-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5935116B2 (ja) * | 2011-12-16 | 2016-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9171699B2 (en) * | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
KR102168064B1 (ko) | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
JP6320248B2 (ja) * | 2014-03-04 | 2018-05-09 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
US9768033B2 (en) * | 2014-07-10 | 2017-09-19 | Tokyo Electron Limited | Methods for high precision etching of substrates |
-
2016
- 2016-03-22 JP JP2016056943A patent/JP6378234B2/ja active Active
-
2017
- 2017-03-10 TW TW106108072A patent/TWI730062B/zh active
- 2017-03-21 US US15/464,739 patent/US9824864B2/en active Active
- 2017-03-21 SG SG10201702291PA patent/SG10201702291PA/en unknown
- 2017-03-21 KR KR1020170035287A patent/KR102222933B1/ko active IP Right Grant
- 2017-03-22 CN CN201710174303.9A patent/CN107221494B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20170278677A1 (en) | 2017-09-28 |
TWI730062B (zh) | 2021-06-11 |
JP6378234B2 (ja) | 2018-08-22 |
US9824864B2 (en) | 2017-11-21 |
TW201801571A (zh) | 2018-01-01 |
CN107221494B (zh) | 2020-06-02 |
KR20170110039A (ko) | 2017-10-10 |
JP2017174538A (ja) | 2017-09-28 |
CN107221494A (zh) | 2017-09-29 |
KR102222933B1 (ko) | 2021-03-04 |
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