SG10201610256TA - Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry - Google Patents
Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometryInfo
- Publication number
- SG10201610256TA SG10201610256TA SG10201610256TA SG10201610256TA SG10201610256TA SG 10201610256T A SG10201610256T A SG 10201610256TA SG 10201610256T A SG10201610256T A SG 10201610256TA SG 10201610256T A SG10201610256T A SG 10201610256TA SG 10201610256T A SG10201610256T A SG 10201610256TA
- Authority
- SG
- Singapore
- Prior art keywords
- systems
- methods
- wafer shape
- characterizing
- process control
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02097—Self-interferometers
- G01B9/02098—Shearing interferometers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562263917P | 2015-12-07 | 2015-12-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201610256TA true SG10201610256TA (en) | 2017-07-28 |
Family
ID=58010323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201610256TA SG10201610256TA (en) | 2015-12-07 | 2016-12-07 | Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry |
Country Status (8)
Country | Link |
---|---|
US (1) | US9935022B2 (en) |
JP (1) | JP6353891B2 (en) |
KR (1) | KR102460056B1 (en) |
CN (1) | CN106847721A (en) |
DE (1) | DE102016223967A1 (en) |
NL (1) | NL2017860B1 (en) |
SG (1) | SG10201610256TA (en) |
TW (1) | TWI620915B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018183153A1 (en) * | 2017-03-29 | 2018-10-04 | Rutgers, The State University Of New Jersey | Systems and methods for real time measurement of surface curvature and thermal expansion of small samples |
WO2019147791A1 (en) * | 2018-01-26 | 2019-08-01 | Edmund Optics, Inc. | Reflective optical beam conditioners with integrated alignment features |
US11164768B2 (en) * | 2018-04-27 | 2021-11-02 | Kla Corporation | Process-induced displacement characterization during semiconductor production |
CN110568726B (en) * | 2018-06-05 | 2023-09-22 | 长鑫存储技术有限公司 | Exposure focusing compensation method |
JP7118928B2 (en) * | 2018-08-03 | 2022-08-16 | 東京エレクトロン株式会社 | Improving Global Wafer Distortion Based on Identifying Local Distortion of Semiconductor Wafers |
CN109155235A (en) * | 2018-08-16 | 2019-01-04 | 长江存储科技有限责任公司 | It is controlled using the wafer flatness of back side collocation structure |
US11049720B2 (en) | 2018-10-19 | 2021-06-29 | Kla Corporation | Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films |
JP7344047B2 (en) * | 2019-08-22 | 2023-09-13 | 株式会社ジェーイーエル | How to align the board |
CN110672027B (en) * | 2019-09-30 | 2020-07-03 | 清华大学 | Fringe automatic processing device based on coherent gradient sensitive interference |
CN111609997B (en) * | 2020-05-07 | 2022-04-19 | 中国科学院光电技术研究所 | Detection apparatus suitable for transmission-type optical element optical path uniformity measurement |
CN111664802A (en) * | 2020-06-03 | 2020-09-15 | 中国科学院西安光学精密机械研究所 | Semiconductor wafer surface morphology measuring device based on dynamic quantitative phase imaging |
Family Cites Families (28)
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US3829219A (en) | 1973-03-30 | 1974-08-13 | Itek Corp | Shearing interferometer |
JPS63184029A (en) | 1987-01-26 | 1988-07-29 | Canon Inc | Method of measuring shape of wave front |
US5227641A (en) | 1989-05-26 | 1993-07-13 | Frontier Semiconductor Measurements, Inc. | System for measuring the curvature of a semiconductor wafer |
JPH0828321B2 (en) | 1990-08-20 | 1996-03-21 | 松下電器産業株式会社 | Resist coating evaluation method |
US5572323A (en) | 1993-12-27 | 1996-11-05 | Ricoh Company, Ltd. | Infinitesimal displacement measuring apparatus and optical pick-up unit |
US5526116A (en) | 1994-11-07 | 1996-06-11 | Zygo Corporation | Method and apparatus for profiling surfaces using diffractive optics which impinges the beams at two different incident angles |
JPH09115817A (en) | 1995-10-13 | 1997-05-02 | Nikon Corp | Aligner and aligning method |
JP2839081B2 (en) | 1996-03-06 | 1998-12-16 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US5814729A (en) | 1996-09-09 | 1998-09-29 | Mcdonnell Douglas Corporation | System for in-situ delamination detection in composites |
US6031611A (en) | 1997-06-03 | 2000-02-29 | California Institute Of Technology | Coherent gradient sensing method and system for measuring surface curvature |
US6469788B2 (en) | 2000-03-27 | 2002-10-22 | California Institute Of Technology | Coherent gradient sensing ellipsometer |
US6600565B1 (en) | 2000-04-25 | 2003-07-29 | California Institute Of Technology | Real-time evaluation of stress fields and properties in line features formed on substrates |
JP3863779B2 (en) * | 2000-04-27 | 2006-12-27 | カリフォルニア インスティテュート オブ テクノロジー | Real-time evaluation of stress field and properties of line structures formed on a substrate |
TW513772B (en) | 2000-09-05 | 2002-12-11 | Komatsu Denshi Kinzoku Kk | Apparatus for inspecting wafer surface, method for inspecting wafer surface, apparatus for judging defective wafer, method for judging defective wafer and information treatment apparatus of wafer surface |
WO2002040970A1 (en) | 2000-11-15 | 2002-05-23 | Real Time Metrology, Inc. | Optical method and apparatus for inspecting large area planar objects |
US6699627B2 (en) | 2000-12-08 | 2004-03-02 | Adlai Smith | Reference wafer and process for manufacturing same |
TW526573B (en) | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
KR100601120B1 (en) * | 2001-05-25 | 2006-07-19 | 캘리포니아 인스티튜트 오브 테크놀로지 | Determining large deformations and stresses of layered and graded structures to include effects of body forces |
JP2003086501A (en) | 2001-07-04 | 2003-03-20 | Nikon Corp | Wave aberration measuring device |
JP2004022677A (en) * | 2002-06-13 | 2004-01-22 | Shin Etsu Handotai Co Ltd | Semiconductor wafer |
US7369251B2 (en) | 2003-01-28 | 2008-05-06 | Ultratech, Inc. | Full-field optical measurements of surface properties of panels, substrates and wafers |
EP1477851A1 (en) * | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Device manufacturing method and lithographic apparatus |
JP2009529785A (en) * | 2006-03-09 | 2009-08-20 | ウルトラテック インク | Lithographic misalignment determination method based on substrate curvature and stress mapping data |
US20080182344A1 (en) * | 2007-01-30 | 2008-07-31 | Steffen Mueller | Method and system for determining deformations on a substrate |
US9354526B2 (en) * | 2011-10-11 | 2016-05-31 | Kla-Tencor Corporation | Overlay and semiconductor process control using a wafer geometry metric |
JP5581365B2 (en) | 2011-12-07 | 2014-08-27 | ウルトラテック インク | Method for characterizing a semiconductor light emitting device based on the characteristics of a product wafer |
US9177370B2 (en) | 2012-03-12 | 2015-11-03 | Kla-Tencor Corporation | Systems and methods of advanced site-based nanotopography for wafer surface metrology |
US10401279B2 (en) * | 2013-10-29 | 2019-09-03 | Kla-Tencor Corporation | Process-induced distortion prediction and feedforward and feedback correction of overlay errors |
-
2016
- 2016-11-24 NL NL2017860A patent/NL2017860B1/en active
- 2016-11-29 US US15/362,923 patent/US9935022B2/en active Active
- 2016-12-01 DE DE102016223967.8A patent/DE102016223967A1/en not_active Ceased
- 2016-12-06 CN CN201611110412.6A patent/CN106847721A/en active Pending
- 2016-12-07 KR KR1020160165922A patent/KR102460056B1/en active IP Right Grant
- 2016-12-07 SG SG10201610256TA patent/SG10201610256TA/en unknown
- 2016-12-07 TW TW105140510A patent/TWI620915B/en active
- 2016-12-07 JP JP2016237262A patent/JP6353891B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170162456A1 (en) | 2017-06-08 |
CN106847721A (en) | 2017-06-13 |
TWI620915B (en) | 2018-04-11 |
JP2017122716A (en) | 2017-07-13 |
NL2017860A (en) | 2017-06-22 |
NL2017860B1 (en) | 2017-07-27 |
KR102460056B1 (en) | 2022-10-27 |
DE102016223967A1 (en) | 2017-06-08 |
TW201723421A (en) | 2017-07-01 |
KR20170067155A (en) | 2017-06-15 |
US9935022B2 (en) | 2018-04-03 |
JP6353891B2 (en) | 2018-07-04 |
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