SG10201608348SA - Method For Impedance Matching Of Plasma Processing Apparatus - Google Patents

Method For Impedance Matching Of Plasma Processing Apparatus

Info

Publication number
SG10201608348SA
SG10201608348SA SG10201608348SA SG10201608348SA SG10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA
Authority
SG
Singapore
Prior art keywords
processing apparatus
plasma processing
impedance matching
impedance
matching
Prior art date
Application number
SG10201608348SA
Inventor
Koichi Nagami
Naoyuki Umehara
Norikazu Yamada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201608348SA publication Critical patent/SG10201608348SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits
    • H05H2242/26Matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG10201608348SA 2015-10-06 2016-10-05 Method For Impedance Matching Of Plasma Processing Apparatus SG10201608348SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015198314A JP6541540B2 (en) 2015-10-06 2015-10-06 Method for impedance matching of plasma processing apparatus

Publications (1)

Publication Number Publication Date
SG10201608348SA true SG10201608348SA (en) 2017-05-30

Family

ID=58448180

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201608348SA SG10201608348SA (en) 2015-10-06 2016-10-05 Method For Impedance Matching Of Plasma Processing Apparatus

Country Status (6)

Country Link
US (1) US9736921B2 (en)
JP (1) JP6541540B2 (en)
KR (1) KR20170041142A (en)
CN (1) CN106941067B (en)
SG (1) SG10201608348SA (en)
TW (1) TWI711083B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP7209483B2 (en) * 2017-10-10 2023-01-20 東京エレクトロン株式会社 Plasma processing equipment and measurement circuit
US10903049B2 (en) 2017-10-10 2021-01-26 Tokyo Electron Limited Plasma processing apparatus and measurement circuit
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TWI767088B (en) * 2017-11-17 2022-06-11 新加坡商Aes全球公司 Plasma processing system, control method for modulating supplies therein and related plasma processing control system
TW202329762A (en) 2017-11-17 2023-07-16 新加坡商Aes 全球公司 Systems and methods for spatially and temporally controlling plasma processing on substrates and related computer-readable medium
EP3711080B1 (en) 2017-11-17 2023-06-21 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
US10269540B1 (en) * 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
JP2019186098A (en) * 2018-04-12 2019-10-24 東京エレクトロン株式会社 Method of generating plasma
CN110504149B (en) * 2018-05-17 2022-04-22 北京北方华创微电子装备有限公司 Pulse modulation system and method of radio frequency power supply
DE102018116637A1 (en) * 2018-07-10 2020-01-16 TRUMPF Hüttinger GmbH + Co. KG Power supply facility and operating procedures therefor
JP7154119B2 (en) 2018-12-06 2022-10-17 東京エレクトロン株式会社 Control method and plasma processing apparatus
CN111293022B (en) * 2018-12-07 2023-01-24 中微半导体设备(上海)股份有限公司 Impedance matching method and device for pulsed radio frequency plasma
JP2022541004A (en) 2019-07-12 2022-09-21 エーイーエス グローバル ホールディングス, プライベート リミテッド Bias supply device with single controlled switch
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications
JP2021108413A (en) 2019-12-27 2021-07-29 株式会社ダイヘン Impedance adjustment device and impedance adjustment method
JP7466377B2 (en) * 2020-05-21 2024-04-12 東京エレクトロン株式会社 Substrate Processing Equipment
JP7479255B2 (en) * 2020-09-14 2024-05-08 東京エレクトロン株式会社 Plasma Processing Equipment
JP7479256B2 (en) * 2020-09-15 2024-05-08 東京エレクトロン株式会社 Plasma Processing Equipment
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

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JPH03122618A (en) 1989-10-05 1991-05-24 Nec Corp Thin film two-terminal type active matrix liquid crystal display device
JP3122618B2 (en) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 Plasma processing equipment
JP4286404B2 (en) * 1999-10-15 2009-07-01 東京エレクトロン株式会社 Matching device and plasma processing apparatus
US7794615B2 (en) * 2005-03-31 2010-09-14 Tokyo Electron Limited Plasma processing method and apparatus, and autorunning program for variable matching unit
JP4887197B2 (en) * 2006-12-29 2012-02-29 株式会社ダイヘン High frequency equipment
JP5484375B2 (en) * 2011-02-17 2014-05-07 三菱電機株式会社 Plasma film forming apparatus and plasma film forming method
JP5867701B2 (en) * 2011-12-15 2016-02-24 東京エレクトロン株式会社 Plasma processing equipment
JP5808012B2 (en) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 Plasma processing equipment
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
JP2013250231A (en) * 2012-06-04 2013-12-12 Daihen Corp Phase difference detection device, phase difference detection program, and plasma processing system using phase difference detection device
JP6144917B2 (en) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 Plasma processing apparatus and method of operating plasma processing apparatus
KR20150087702A (en) * 2014-01-22 2015-07-30 삼성전자주식회사 Plasma generating apparatus

Also Published As

Publication number Publication date
TW201719751A (en) 2017-06-01
US20170099723A1 (en) 2017-04-06
CN106941067A (en) 2017-07-11
JP6541540B2 (en) 2019-07-10
KR20170041142A (en) 2017-04-14
TWI711083B (en) 2020-11-21
US9736921B2 (en) 2017-08-15
JP2017073247A (en) 2017-04-13
CN106941067B (en) 2019-01-15

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