SG10201607223SA - High-purity copper-manganese-alloy sputtering target - Google Patents
High-purity copper-manganese-alloy sputtering targetInfo
- Publication number
- SG10201607223SA SG10201607223SA SG10201607223SA SG10201607223SA SG10201607223SA SG 10201607223S A SG10201607223S A SG 10201607223SA SG 10201607223S A SG10201607223S A SG 10201607223SA SG 10201607223S A SG10201607223S A SG 10201607223SA SG 10201607223S A SG10201607223S A SG 10201607223SA
- Authority
- SG
- Singapore
- Prior art keywords
- manganese
- sputtering target
- alloy sputtering
- purity copper
- purity
- Prior art date
Links
- 229910000914 Mn alloy Inorganic materials 0.000 title 1
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Optics & Photonics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011200228 | 2011-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201607223SA true SG10201607223SA (en) | 2016-10-28 |
Family
ID=47883193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201607223SA SG10201607223SA (en) | 2011-09-14 | 2012-09-05 | High-purity copper-manganese-alloy sputtering target |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20140158532A1 (fr) |
| EP (1) | EP2837710B1 (fr) |
| JP (2) | JPWO2013038962A1 (fr) |
| KR (3) | KR20160030588A (fr) |
| CN (1) | CN103797152A (fr) |
| IL (1) | IL230014A (fr) |
| SG (1) | SG10201607223SA (fr) |
| TW (1) | TWI539019B (fr) |
| WO (1) | WO2013038962A1 (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110123389A1 (en) | 2008-09-30 | 2011-05-26 | Jx Nippon Mining & Metals Corporation | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis |
| EP3128039B1 (fr) * | 2008-09-30 | 2019-05-01 | JX Nippon Mining & Metals Corp. | Cible de pulvérisation en cuivre de grande pureté ou en alliage de cuivre de grande pureté |
| CN103547701B (zh) | 2011-09-14 | 2016-10-05 | 吉坤日矿日石金属株式会社 | 高纯度铜锰合金溅射靶 |
| JPWO2013047199A1 (ja) | 2011-09-30 | 2015-03-26 | Jx日鉱日石金属株式会社 | スパッタリングターゲット及びその製造方法 |
| US9165750B2 (en) | 2012-01-23 | 2015-10-20 | Jx Nippon Mining & Metals Corporation | High purity copper—manganese alloy sputtering target |
| JP2014043643A (ja) * | 2012-08-03 | 2014-03-13 | Kobelco Kaken:Kk | Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
| WO2014136673A1 (fr) | 2013-03-07 | 2014-09-12 | Jx日鉱日石金属株式会社 | Cible de pulvérisation cathodique d'alliage de cuivre |
| JPWO2015099119A1 (ja) * | 2013-12-27 | 2017-03-23 | Ｊｘ金属株式会社 | 高純度銅又は銅合金スパッタリングターゲット及びその製造方法 |
| JP6312009B2 (ja) * | 2015-02-12 | 2018-04-18 | 日立金属株式会社 | Ｃｒ−Ｔｉ合金スパッタリングターゲット材およびその製造方法 |
| US10494712B2 (en) | 2015-05-21 | 2019-12-03 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing same |
| TWI663274B (zh) | 2017-03-30 | 2019-06-21 | 日商Ｊｘ金屬股份有限公司 | Sputtering target and manufacturing method thereof |
| US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS597462A (ja) * | 1982-07-07 | 1984-01-14 | Fujitsu Ltd | 薄片状銅−マンガン系合金 |
| JP3769761B2 (ja) * | 1994-04-28 | 2006-04-26 | 住友化学株式会社 | アルミニウム合金単結晶ターゲットおよびその製造方法 |
| WO2002020865A1 (fr) * | 2000-09-07 | 2002-03-14 | Kabushiki Kaisha Toshiba | Cible de pulverisation au tungstene et son procede de fabrication |
| JP2002294437A (ja) | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
| WO2006025347A1 (fr) | 2004-08-31 | 2006-03-09 | National University Corporation Tohoku University | Alliage de cuivre et affichage à cristaux liquides |
| KR100700885B1 (ko) * | 2003-03-17 | 2007-03-29 | 닛코킨조쿠 가부시키가이샤 | 동합금 스퍼터링 타겟트 및 그 제조방법 과 반도체 소자배선 |
| JP2005232509A (ja) * | 2004-02-18 | 2005-09-02 | Mitsui Mining & Smelting Co Ltd | Ｍｎ合金スパッタリングターゲットの製造方法及びその製法によるＭｎ合金スパッタリングターゲット |
| JP5068925B2 (ja) * | 2004-09-03 | 2012-11-07 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット |
| JP4756458B2 (ja) * | 2005-08-19 | 2011-08-24 | 三菱マテリアル株式会社 | パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット |
| KR101070185B1 (ko) | 2006-10-03 | 2011-10-05 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선 |
| JP5234483B2 (ja) | 2007-06-12 | 2013-07-10 | 三菱マテリアル株式会社 | 密着性に優れた配線下地膜およびこの配線下地膜を形成するためのスパッタリングターゲット |
| JP2009074127A (ja) | 2007-09-20 | 2009-04-09 | Kojundo Chem Lab Co Ltd | 焼結スパッタリングターゲット材およびその製造方法 |
| JP5263665B2 (ja) | 2007-09-25 | 2013-08-14 | 日立金属株式会社 | 配線膜用Ｃｕ合金膜および配線膜形成用スパッタリングターゲット材 |
| JP2010248619A (ja) | 2009-03-26 | 2010-11-04 | Hitachi Metals Ltd | 酸素含有Ｃｕ合金膜の製造方法 |
-
2012
- 2012-09-05 WO PCT/JP2012/072541 patent/WO2013038962A1/fr active Application Filing
- 2012-09-05 CN CN201280044705.2A patent/CN103797152A/zh active Pending
- 2012-09-05 EP EP12831198.2A patent/EP2837710B1/fr active Active
- 2012-09-05 KR KR1020167005713A patent/KR20160030588A/ko not_active Application Discontinuation
- 2012-09-05 JP JP2013533626A patent/JPWO2013038962A1/ja active Pending
- 2012-09-05 US US14/235,865 patent/US20140158532A1/en not_active Abandoned
- 2012-09-05 SG SG10201607223SA patent/SG10201607223SA/en unknown
- 2012-09-05 KR KR1020167008017A patent/KR20160040725A/ko active Search and Examination
- 2012-09-05 KR KR1020137034722A patent/KR20140016996A/ko active Application Filing
- 2012-09-10 TW TW101132969A patent/TWI539019B/zh active
-
2013
- 2013-12-18 IL IL230014A patent/IL230014A/en active IP Right Grant
-
2014
- 2014-09-22 JP JP2014192675A patent/JP2015061943A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20140158532A1 (en) | 2014-06-12 |
| KR20160030588A (ko) | 2016-03-18 |
| KR20160040725A (ko) | 2016-04-14 |
| TW201326430A (zh) | 2013-07-01 |
| EP2837710B1 (fr) | 2019-05-15 |
| JPWO2013038962A1 (ja) | 2015-03-26 |
| KR20140016996A (ko) | 2014-02-10 |
| EP2837710A4 (fr) | 2015-06-03 |
| WO2013038962A1 (fr) | 2013-03-21 |
| CN103797152A (zh) | 2014-05-14 |
| EP2837710A1 (fr) | 2015-02-18 |
| TWI539019B (zh) | 2016-06-21 |
| JP2015061943A (ja) | 2015-04-02 |
| IL230014A (en) | 2017-06-29 |
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