SG10201408496XA - Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate - Google Patents

Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate

Info

Publication number
SG10201408496XA
SG10201408496XA SG10201408496XA SG10201408496XA SG10201408496XA SG 10201408496X A SG10201408496X A SG 10201408496XA SG 10201408496X A SG10201408496X A SG 10201408496XA SG 10201408496X A SG10201408496X A SG 10201408496XA SG 10201408496X A SG10201408496X A SG 10201408496XA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
manufacturing
substrate
reprocessing
reprocessed
Prior art date
Application number
SG10201408496XA
Inventor
Hanaoka Kazuya
Kimura Shunsuke
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG10201408496XA publication Critical patent/SG10201408496XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
SG10201408496XA 2011-06-21 2012-06-20 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate SG10201408496XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011137283 2011-06-21

Publications (1)

Publication Number Publication Date
SG10201408496XA true SG10201408496XA (en) 2015-02-27

Family

ID=47362236

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201408496XA SG10201408496XA (en) 2011-06-21 2012-06-20 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
SG2012045969A SG186572A1 (en) 2011-06-21 2012-06-20 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012045969A SG186572A1 (en) 2011-06-21 2012-06-20 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate

Country Status (3)

Country Link
US (1) US9123529B2 (en)
JP (1) JP5865786B2 (en)
SG (2) SG10201408496XA (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5799740B2 (en) * 2011-10-17 2015-10-28 信越半導体株式会社 Recycled wafer reclaim processing method
JP6266653B2 (en) * 2013-01-08 2018-01-24 エスケー シルトロン カンパニー リミテッド Silicon single crystal wafer
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
EP3993018A1 (en) * 2017-07-14 2022-05-04 Sunedison Semiconductor Limited Method of manufacture of a semiconductor on insulator structure
US10553474B1 (en) * 2018-08-29 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor-on-insulator (SOI) substrate

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3640806A (en) 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
JPS4945035B1 (en) * 1970-10-05 1974-12-02
JPS6286709A (en) 1985-10-11 1987-04-21 Mitsubishi Electric Corp Manufacture of semiconductor device
CA2069038C (en) 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
JP3077304B2 (en) * 1991-10-09 2000-08-14 日産自動車株式会社 Etching equipment
FR2715501B1 (en) 1994-01-26 1996-04-05 Commissariat Energie Atomique Method for depositing semiconductor wafers on a support.
US20030087503A1 (en) 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US5494849A (en) 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
JP4103968B2 (en) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device
JPH10284431A (en) 1997-04-11 1998-10-23 Sharp Corp Manufacture of soi substrate
US6251754B1 (en) 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6155909A (en) 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6027988A (en) 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
JPH1154451A (en) 1997-08-07 1999-02-26 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US6388652B1 (en) 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4553991B2 (en) 1997-12-09 2010-09-29 セイコーエプソン株式会社 Manufacturing method of electro-optical device
JP3762221B2 (en) * 1998-04-10 2006-04-05 マサチューセッツ・インスティテュート・オブ・テクノロジー Silicon germanium etch stop layer system
JP3500063B2 (en) 1998-04-23 2004-02-23 信越半導体株式会社 Method for recycling peeled wafer and silicon wafer for reuse
JP3697106B2 (en) 1998-05-15 2005-09-21 キヤノン株式会社 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film
JP2000012864A (en) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JP3395661B2 (en) 1998-07-07 2003-04-14 信越半導体株式会社 Method for manufacturing SOI wafer
JP3358550B2 (en) 1998-07-07 2002-12-24 信越半導体株式会社 Method for producing SOI wafer and SOI wafer produced by this method
US7153729B1 (en) 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP2000036585A (en) 1998-07-21 2000-02-02 Asahi Kasei Microsystems Kk Manufacture of semiconductor device
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (en) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2000124092A (en) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd Manufacture of soi wafer by hydrogen-ion implantation stripping method and soi wafer manufactured thereby
US6331473B1 (en) 1998-12-29 2001-12-18 Seiko Epson Corporation SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same
JP2000223682A (en) 1999-02-02 2000-08-11 Canon Inc Processing method for basic body and production of semiconductor substrate
US6468923B1 (en) 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
JP2003506883A (en) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション Cleavage process for manufacturing multi-layer substrates with low implant dose
JP4101409B2 (en) 1999-08-19 2008-06-18 シャープ株式会社 Manufacturing method of semiconductor device
JP2001094136A (en) 1999-09-22 2001-04-06 Canon Inc Method for manufacturing semiconductor element module and solar cell module
JP3943782B2 (en) 1999-11-29 2007-07-11 信越半導体株式会社 Reclaimed wafer reclaim processing method and reclaimed peeled wafer
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
JP2001274368A (en) 2000-03-27 2001-10-05 Shin Etsu Handotai Co Ltd Producing method for semiconductor bonding wafer and semiconductor bonding wafer produced by the same
US6521492B2 (en) 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
JP2002134375A (en) 2000-10-25 2002-05-10 Canon Inc Semiconductor base body and its manufacturing method, and surface shape measurement method of laminated base body
FR2894990B1 (en) 2005-12-21 2008-02-22 Soitec Silicon On Insulator PROCESS FOR PRODUCING SUBSTRATES, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED BY SAID PROCESS
JP2003163335A (en) 2001-11-27 2003-06-06 Shin Etsu Handotai Co Ltd Method for producing laminated wafer
US7052974B2 (en) 2001-12-04 2006-05-30 Shin-Etsu Handotai Co., Ltd. Bonded wafer and method of producing bonded wafer
FR2834123B1 (en) 2001-12-21 2005-02-04 Soitec Silicon On Insulator SEMICONDUCTOR THIN FILM DELIVERY METHOD AND METHOD FOR OBTAINING A DONOR WAFER FOR SUCH A DELAYING METHOD
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4772258B2 (en) 2002-08-23 2011-09-14 シャープ株式会社 Manufacturing method of SOI substrate
JP4289837B2 (en) 2002-07-15 2009-07-01 アプライド マテリアルズ インコーポレイテッド Ion implantation method and method for manufacturing SOI wafer
JP4328067B2 (en) 2002-07-31 2009-09-09 アプライド マテリアルズ インコーポレイテッド Ion implantation method, SOI wafer manufacturing method, and ion implantation apparatus
US7508034B2 (en) 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
TWI233154B (en) 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
RU2217842C1 (en) 2003-01-14 2003-11-27 Институт физики полупроводников - Объединенного института физики полупроводников СО РАН Method for producing silicon-on-insulator structure
US7256104B2 (en) 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
FR2858875B1 (en) 2003-08-12 2006-02-10 Soitec Silicon On Insulator METHOD FOR MAKING THIN LAYERS OF SEMICONDUCTOR MATERIAL FROM A DONOR WAFER
WO2005074033A1 (en) 2004-01-30 2005-08-11 Sumco Corporation Method for manufacturing soi wafer
JP2005340643A (en) * 2004-05-28 2005-12-08 Sharp Corp Manufacturing method of semiconductor substrate for solar cell
DE602004018951D1 (en) 2004-11-09 2009-02-26 Soitec Silicon On Insulator Method for producing composite wafers
US7402520B2 (en) 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
JP4934966B2 (en) 2005-02-04 2012-05-23 株式会社Ｓｕｍｃｏ Manufacturing method of SOI substrate
JP2006294737A (en) 2005-04-07 2006-10-26 Sumco Corp Method of manufacturing soi substrate and method of reproducing peeled wafer during manufacture thereof
JP5122731B2 (en) 2005-06-01 2013-01-16 信越半導体株式会社 Manufacturing method of bonded wafer
JP4977999B2 (en) 2005-11-21 2012-07-18 株式会社Ｓｕｍｃｏ Manufacturing method of bonded substrate and bonded substrate manufactured by the method
JP4715470B2 (en) 2005-11-28 2011-07-06 株式会社Ｓｕｍｃｏ Release wafer reclaim processing method and release wafer regenerated by this method
US7829436B2 (en) 2005-12-22 2010-11-09 Sumco Corporation Process for regeneration of a layer transferred wafer and regenerated layer transferred wafer
US7781309B2 (en) 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
EP1835533B1 (en) 2006-03-14 2020-06-03 Soitec Method for manufacturing compound material wafers and method for recycling a used donor substrate
FR2899380B1 (en) 2006-03-31 2008-08-29 Soitec Sa METHOD FOR REVELATING CRYSTALLINE DEFECTS IN A MASSIVE SUBSTRATE
US7790565B2 (en) 2006-04-21 2010-09-07 Corning Incorporated Semiconductor on glass insulator made using improved thinning process
US7579654B2 (en) 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
US7608521B2 (en) 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
JP5314838B2 (en) 2006-07-14 2013-10-16 信越半導体株式会社 Method for reusing peeled wafers
JP2008147434A (en) * 2006-12-11 2008-06-26 Toshiba Corp Method for manufacturing semiconductor device
JP2008153411A (en) 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Manufacturing method of soi substrate
JP4820801B2 (en) 2006-12-26 2011-11-24 株式会社Ｓｕｍｃｏ Manufacturing method of bonded wafer
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US7755113B2 (en) 2007-03-16 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device
US7759233B2 (en) 2007-03-23 2010-07-20 Micron Technology, Inc. Methods for stressing semiconductor material structures to improve electron and/or hole mobility of transistor channels fabricated therefrom, and semiconductor devices including such structures
JP5289805B2 (en) 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 Method for manufacturing substrate for manufacturing semiconductor device
US7825007B2 (en) 2007-05-11 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
US7939424B2 (en) 2007-09-21 2011-05-10 Varian Semiconductor Equipment Associates, Inc. Wafer bonding activated by ion implantation
KR101499175B1 (en) 2007-10-04 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor substrate
JP2009135430A (en) 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP5522917B2 (en) 2007-10-10 2014-06-18 株式会社半導体エネルギー研究所 Manufacturing method of SOI substrate
US7799658B2 (en) 2007-10-10 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
JP5688203B2 (en) 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor substrate
US7851318B2 (en) 2007-11-01 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
US7781308B2 (en) 2007-12-03 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8093136B2 (en) 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US7767583B2 (en) 2008-03-04 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method to improve uniformity of chemical mechanical polishing planarization
US20100022070A1 (en) 2008-07-22 2010-01-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
SG159484A1 (en) 2008-09-05 2010-03-30 Semiconductor Energy Lab Method of manufacturing soi substrate
SG166060A1 (en) 2009-04-22 2010-11-29 Semiconductor Energy Lab Method of manufacturing soi substrate
CN102460642A (en) 2009-06-24 2012-05-16 株式会社半导体能源研究所 Method for reprocessing semiconductor substrate and method for manufacturing soi substrate
US8278187B2 (en) 2009-06-24 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate by stepwise etching with at least two etching treatments
US8318588B2 (en) 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
SG178061A1 (en) 2009-08-25 2012-03-29 Semiconductor Energy Lab Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
SG178179A1 (en) * 2009-10-09 2012-03-29 Semiconductor Energy Lab Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate

Also Published As

Publication number Publication date
US20120329242A1 (en) 2012-12-27
JP5865786B2 (en) 2016-02-17
US9123529B2 (en) 2015-09-01
SG186572A1 (en) 2013-01-30
JP2013030764A (en) 2013-02-07

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