SG10201407637TA - An electrostatic chuck with an angled sidewall - Google Patents

An electrostatic chuck with an angled sidewall

Info

Publication number
SG10201407637TA
SG10201407637TA SG10201407637TA SG10201407637TA SG10201407637TA SG 10201407637T A SG10201407637T A SG 10201407637TA SG 10201407637T A SG10201407637T A SG 10201407637TA SG 10201407637T A SG10201407637T A SG 10201407637TA SG 10201407637T A SG10201407637T A SG 10201407637TA
Authority
SG
Singapore
Prior art keywords
angled sidewall
substrate support
plasma processing
electrostatic chuck
substrate
Prior art date
Application number
SG10201407637TA
Other languages
English (en)
Inventor
Rajinder Dhindsa
Pratik Mankidy
Chris Kimball
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201407637TA publication Critical patent/SG10201407637TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10201407637TA 2009-11-30 2010-11-22 An electrostatic chuck with an angled sidewall SG10201407637TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26520009P 2009-11-30 2009-11-30

Publications (1)

Publication Number Publication Date
SG10201407637TA true SG10201407637TA (en) 2015-01-29

Family

ID=44067154

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201407637TA SG10201407637TA (en) 2009-11-30 2010-11-22 An electrostatic chuck with an angled sidewall

Country Status (7)

Country Link
US (1) US20110126852A1 (ko)
JP (1) JP5808750B2 (ko)
KR (1) KR20120116923A (ko)
CN (1) CN102666917A (ko)
SG (1) SG10201407637TA (ko)
TW (2) TW201622061A (ko)
WO (1) WO2011065965A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10655224B2 (en) * 2016-12-20 2020-05-19 Lam Research Corporation Conical wafer centering and holding device for semiconductor processing
WO2021021531A1 (en) 2019-08-01 2021-02-04 Lam Research Corporation Systems and methods for cleaning an edge ring pocket
JP7270863B1 (ja) 2019-11-29 2023-05-10 東京エレクトロン株式会社 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JP7229904B2 (ja) * 2019-11-29 2023-02-28 東京エレクトロン株式会社 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JP7537843B2 (ja) 2020-10-09 2024-08-21 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
JP7248167B1 (ja) 2022-03-03 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7203260B1 (ja) 2022-03-30 2023-01-12 住友大阪セメント株式会社 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法
JP7248182B1 (ja) 2022-08-30 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP2024090654A (ja) * 2022-12-23 2024-07-04 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7529008B2 (ja) * 2022-12-23 2024-08-06 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
KR0183823B1 (ko) * 1996-02-22 1999-04-15 김광호 웨이퍼 로딩용 스테이지를 갖춘 반도체 제조 장치
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
JPH11121600A (ja) * 1997-10-20 1999-04-30 Tokyo Electron Ltd 処理装置
US6073576A (en) * 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
KR100635845B1 (ko) * 1999-07-08 2006-10-18 램 리써치 코포레이션 정전기 척 및 그 제조 방법
EP1137321A1 (en) * 1999-11-30 2001-09-26 Ibiden Co., Ltd. Ceramic heater
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
JP3505155B2 (ja) * 2001-02-13 2004-03-08 株式会社日立製作所 ウエハ保持装置
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US20050051098A1 (en) * 2003-09-05 2005-03-10 Tooru Aramaki Plasma processing apparatus
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7651585B2 (en) * 2005-09-26 2010-01-26 Lam Research Corporation Apparatus for the removal of an edge polymer from a substrate and methods therefor
KR101153118B1 (ko) * 2005-10-12 2012-06-07 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US7501605B2 (en) * 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
JP5260023B2 (ja) * 2007-10-19 2013-08-14 三菱重工業株式会社 プラズマ成膜装置
JP5302814B2 (ja) * 2009-07-29 2013-10-02 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
WO2011065965A3 (en) 2011-09-09
TW201125068A (en) 2011-07-16
KR20120116923A (ko) 2012-10-23
TW201622061A (zh) 2016-06-16
JP2013512564A (ja) 2013-04-11
TWI538091B (zh) 2016-06-11
JP5808750B2 (ja) 2015-11-10
CN102666917A (zh) 2012-09-12
WO2011065965A2 (en) 2011-06-03
US20110126852A1 (en) 2011-06-02

Similar Documents

Publication Publication Date Title
SG10201407637TA (en) An electrostatic chuck with an angled sidewall
SG144905A1 (en) Removal of process residues on the backside of a substrate
WO2011031556A3 (en) Gas distribution showerhead and method of cleaning
WO2009114120A3 (en) Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
WO2009125951A3 (en) Plasma processing apparatus and method for plasma processing
TW200721302A (en) Apparatus and methods to remove films on bevel edge and backside of wafer
TW200717648A (en) Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
WO2011159615A3 (en) Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
WO2011100293A3 (en) Process chamber gas flow improvements
SG170717A1 (en) Hot edge ring with sloped upper surface
TW200641991A (en) Methods for silicon electrode assembly etch rate and etch uniformity recovery
WO2012125560A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
WO2012145492A3 (en) Apparatus for deposition of materials on a substrate
SG144878A1 (en) Process for wafer backside polymer removal with wafer front side gas purge
TW200731353A (en) A deposition system and method
SG169306A1 (en) Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
WO2012015931A3 (en) Apparatus for controlling the flow of a gas in a process chamber
WO2011146108A3 (en) Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
TW200609986A (en) High rate etching using high pressure f2 plasma with argon dilution
WO2009091189A3 (en) Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
TW200737305A (en) Notched deposition ring
SG179482A1 (en) Edge electrodes with dielectric covers
TW200703495A (en) Method and apparatus for cleaning substrate
TW200627541A (en) Focus ring, plasma etching apparatus and plasma etching method
SG144879A1 (en) Process for wafer backside polymer removal and wafer front side scavenger plasma