SG10201405469WA - Unitized confinement ring arrangements and methods thereof - Google Patents

Unitized confinement ring arrangements and methods thereof

Info

Publication number
SG10201405469WA
SG10201405469WA SG10201405469WA SG10201405469WA SG10201405469WA SG 10201405469W A SG10201405469W A SG 10201405469WA SG 10201405469W A SG10201405469W A SG 10201405469WA SG 10201405469W A SG10201405469W A SG 10201405469WA SG 10201405469W A SG10201405469W A SG 10201405469WA
Authority
SG
Singapore
Prior art keywords
methods
confinement ring
ring arrangements
unitized confinement
unitized
Prior art date
Application number
SG10201405469WA
Other languages
English (en)
Inventor
Rajinder Dhindsa
Rajaramanan Kalyanaraman
Sathyanarayanan Mani
Guatam Bhattacharyya
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201405469WA publication Critical patent/SG10201405469WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201405469WA 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof SG10201405469WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24652609P 2009-09-28 2009-09-28

Publications (1)

Publication Number Publication Date
SG10201405469WA true SG10201405469WA (en) 2014-10-30

Family

ID=43778979

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012009619A SG178371A1 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof
SG10201405469WA SG10201405469WA (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012009619A SG178371A1 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Country Status (8)

Country Link
US (2) US20110073257A1 (fr)
EP (1) EP2484185A4 (fr)
JP (2) JP5792174B2 (fr)
KR (1) KR101711687B1 (fr)
CN (1) CN102656952B (fr)
SG (2) SG178371A1 (fr)
TW (1) TWI567818B (fr)
WO (1) WO2011038344A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
CN103854943B (zh) * 2012-11-30 2016-05-04 中微半导体设备(上海)有限公司 一种用于等离子体处理腔室的约束环及腔室清洁方法
CN103906336A (zh) * 2014-04-14 2014-07-02 中国科学院工程热物理研究所 压力温度可调的气体放电等离子体发生装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
KR102552776B1 (ko) 2015-11-30 2023-07-10 (주)아모레퍼시픽 miRNA를 포함하는 흑색종 전이 억제용 조성물
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
CN115881506B (zh) * 2023-03-02 2023-06-27 深圳市新凯来技术有限公司 等离子体调节装置及半导体刻蚀设备

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3165941B2 (ja) * 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
JP3222859B2 (ja) * 1994-04-20 2001-10-29 東京エレクトロン株式会社 プラズマ処理装置
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
JP4405496B2 (ja) * 1997-02-24 2010-01-27 株式会社エフオーアイ プラズマ処理装置
JP3468446B2 (ja) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 プラズマ処理装置
JP3972970B2 (ja) * 1998-08-06 2007-09-05 株式会社エフオーアイ プラズマリアクタ
KR19990036942U (ko) * 1999-05-01 1999-10-05 김시오 충격흡수를위한가이드레일
US6203661B1 (en) * 1999-12-07 2001-03-20 Trusi Technologies, Llc Brim and gas escape for non-contact wafer holder
JP2001185542A (ja) * 1999-12-27 2001-07-06 Hitachi Ltd プラズマ処理装置及びそれを用いたプラズマ処理方法
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP3660646B2 (ja) * 2002-04-25 2005-06-15 株式会社東芝 プラズマ処理装置
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
JP4268433B2 (ja) * 2003-04-02 2009-05-27 積水化学工業株式会社 プラズマ処理装置
JP4286576B2 (ja) * 2003-04-25 2009-07-01 東京エレクトロン株式会社 プラズマ処理装置
US7276135B2 (en) * 2004-05-28 2007-10-02 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage
US20060177600A1 (en) * 2005-02-08 2006-08-10 Applied Materials, Inc. Inductive plasma system with sidewall magnet
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7875824B2 (en) * 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
JP5029041B2 (ja) * 2007-01-30 2012-09-19 Ｔｄｋ株式会社 プラズマｃｖｄ装置、及び、薄膜製造方法
KR101625516B1 (ko) * 2008-02-08 2016-05-30 램 리써치 코포레이션 플라즈마 프로세싱 장치 및 플라즈마 프로세싱 장치에서 반도체 기판을 처리하는 방법
TWI501704B (zh) * 2008-02-08 2015-09-21 Lam Res Corp 於電漿處理系統中用以改變面積比之方法與裝置

Also Published As

Publication number Publication date
JP6204940B2 (ja) 2017-09-27
US20150325414A1 (en) 2015-11-12
US20110073257A1 (en) 2011-03-31
WO2011038344A2 (fr) 2011-03-31
KR20120088687A (ko) 2012-08-08
CN102656952B (zh) 2016-10-12
EP2484185A2 (fr) 2012-08-08
TW201133607A (en) 2011-10-01
KR101711687B1 (ko) 2017-03-02
JP5792174B2 (ja) 2015-10-07
TWI567818B (zh) 2017-01-21
JP2015201653A (ja) 2015-11-12
SG178371A1 (en) 2012-03-29
CN102656952A (zh) 2012-09-05
JP2013506301A (ja) 2013-02-21
EP2484185A4 (fr) 2014-07-23
WO2011038344A3 (fr) 2011-07-28

Similar Documents

Publication Publication Date Title
SG10201405469WA (en) Unitized confinement ring arrangements and methods thereof
GB2469720B (en) Join-us call-log and call-answer messages
HUS2300038I1 (hu) Stabilizált alfa-galaktozidáz és ennek alkalmazásai
EP2510094A4 (fr) Compositions et procédés comprenant des variants de protéase
GB2479847B (en) Coelenterazine analogs and manufacturing method thereof
GB0914644D0 (en) Novel agents and uses thereof
IL213928A0 (en) Defining simple and complex animations
EP2412431A4 (fr) Dispersion et son procédé de fabrication
ZA201108502B (en) Processes and intermediates
GB0908507D0 (en) Hyperbaric dessing and method
GB201001544D0 (en) Pellets and process therefor
IL214372A0 (en) Means and methods for manufacturing highly pure neurotoxin
PL2264358T3 (pl) Oprawa oświetleniowa i taśma oświetleniowa
GB0903299D0 (en) Composition and methods
GB0906828D0 (en) Reference electrode and combined electrode
ZA201204347B (en) New tertiary 8-hydroxyquinoline-7-carboxamide derivatives and uses thereof
GB0912744D0 (en) Methods and uses
EP2504065A4 (fr) Mélanges stables et procédés apparentés
EP2470022A4 (fr) Composés et procédés
GB0909380D0 (en) Method and use
GB0903348D0 (en) Compounds and methods relating thereto
GB0907249D0 (en) New process and new compounds
GB201010877D0 (en) Fireplace and method thereof
GB0920904D0 (en) Uses and methods
GB0913579D0 (en) Catalst and process