SG10201400154XA - 3dic interconnect apparatus and method - Google Patents
3dic interconnect apparatus and methodInfo
- Publication number
- SG10201400154XA SG10201400154XA SG10201400154XA SG10201400154XA SG10201400154XA SG 10201400154X A SG10201400154X A SG 10201400154XA SG 10201400154X A SG10201400154X A SG 10201400154XA SG 10201400154X A SG10201400154X A SG 10201400154XA SG 10201400154X A SG10201400154X A SG 10201400154XA
- Authority
- SG
- Singapore
- Prior art keywords
- interconnect apparatus
- 3dic
- 3dic interconnect
- interconnect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82106—Forming a build-up interconnect by subtractive methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/9202—Forming additional connectors after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/135,153 US10056353B2 (en) | 2013-12-19 | 2013-12-19 | 3DIC interconnect apparatus and method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201400154XA true SG10201400154XA (en) | 2015-07-30 |
Family
ID=53400902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201400154XA SG10201400154XA (en) | 2013-12-19 | 2014-02-24 | 3dic interconnect apparatus and method |
Country Status (2)
Country | Link |
---|---|
US (3) | US10056353B2 (en) |
SG (1) | SG10201400154XA (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150187701A1 (en) | 2013-03-12 | 2015-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Methods of Manufacture Thereof |
US9412719B2 (en) | 2013-12-19 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect apparatus and method |
US10056353B2 (en) | 2013-12-19 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect apparatus and method |
KR102177702B1 (en) * | 2014-02-03 | 2020-11-11 | 삼성전자주식회사 | Via Structures and Semiconductor Devices Having a Via plug |
US10014382B2 (en) * | 2014-03-13 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device with sidewall passivation and method of making |
CN104979329B (en) * | 2014-04-10 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
US9455158B2 (en) | 2014-05-30 | 2016-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect devices and methods of forming same |
US10998228B2 (en) * | 2014-06-12 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned interconnect with protection layer |
TW201603184A (en) * | 2014-07-14 | 2016-01-16 | 聯華電子股份有限公司 | Via structure and method of forming the same |
US9449914B2 (en) | 2014-07-17 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated circuits with redistribution lines |
JP6725231B2 (en) * | 2015-10-06 | 2020-07-15 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image sensor and electronic device |
US10541204B2 (en) | 2015-10-20 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnection structure and method of forming the same |
US10504821B2 (en) * | 2016-01-29 | 2019-12-10 | United Microelectronics Corp. | Through-silicon via structure |
CN105826214B (en) * | 2016-05-30 | 2019-04-30 | 武汉新芯集成电路制造有限公司 | A kind of preparation method of bonded wafer structure |
US10283550B2 (en) * | 2017-03-28 | 2019-05-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, back-side illuminated image sensor and method for manufacturing the same |
KR20200110020A (en) | 2019-03-15 | 2020-09-23 | 삼성전자주식회사 | Display Driver IC(Integrated Circuit) device |
CN110828372A (en) * | 2019-11-11 | 2020-02-21 | 武汉新芯集成电路制造有限公司 | Metal lead, semiconductor device and manufacturing method thereof |
Family Cites Families (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2219434A (en) | 1988-06-06 | 1989-12-06 | Philips Nv | A method of forming a contact in a semiconductor device |
US6207494B1 (en) | 1994-12-29 | 2001-03-27 | Infineon Technologies Corporation | Isolation collar nitride liner for DRAM process improvement |
US6111319A (en) | 1995-12-19 | 2000-08-29 | Stmicroelectronics, Inc. | Method of forming submicron contacts and vias in an integrated circuit |
TW587306B (en) | 2001-03-02 | 2004-05-11 | Macronix Int Co Ltd | Manufacturing method of low-resistance dual damascene via |
US7298758B2 (en) | 2002-07-08 | 2007-11-20 | Brooktree Broadband Holding, Inc. | Method and system for optimizing UTOPIA CLAV polling arbitration |
US7453150B1 (en) | 2004-04-01 | 2008-11-18 | Rensselaer Polytechnic Institute | Three-dimensional face-to-face integration assembly |
US7560375B2 (en) | 2004-09-30 | 2009-07-14 | International Business Machines Corporation | Gas dielectric structure forming methods |
US7253083B2 (en) | 2005-06-17 | 2007-08-07 | Northrop Grumman Corporation | Method of thinning a semiconductor structure |
US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US8018067B2 (en) | 2005-08-26 | 2011-09-13 | Koninklijke Philips Electronics N.V. | Electrically shielded through-wafer interconnect |
US7642195B2 (en) * | 2005-09-26 | 2010-01-05 | Applied Materials, Inc. | Hydrogen treatment to improve photoresist adhesion and rework consistency |
US7410884B2 (en) | 2005-11-21 | 2008-08-12 | Intel Corporation | 3D integrated circuits using thick metal for backside connections and offset bumps |
KR100830581B1 (en) | 2006-11-06 | 2008-05-22 | 삼성전자주식회사 | Semiconductor device having through via and method for manufacturing the same |
US8125052B2 (en) | 2007-05-14 | 2012-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structure with improved cracking protection |
US20080284041A1 (en) | 2007-05-18 | 2008-11-20 | Samsung Electronics Co., Ltd. | Semiconductor package with through silicon via and related method of fabrication |
JP4937842B2 (en) | 2007-06-06 | 2012-05-23 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US7867895B2 (en) | 2007-09-20 | 2011-01-11 | International Business Machines Corporation | Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric |
JP5175526B2 (en) | 2007-11-22 | 2013-04-03 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
KR101465948B1 (en) | 2007-12-27 | 2014-12-10 | 삼성전자주식회사 | A wafer level stack package and method of manufacturing a wafer level stack package |
US7939449B2 (en) | 2008-06-03 | 2011-05-10 | Micron Technology, Inc. | Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends |
US7772123B2 (en) | 2008-06-06 | 2010-08-10 | Infineon Technologies Ag | Through substrate via semiconductor components |
US7928577B2 (en) | 2008-07-16 | 2011-04-19 | Micron Technology, Inc. | Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same |
US8097955B2 (en) | 2008-10-15 | 2012-01-17 | Qimonda Ag | Interconnect structures and methods |
US7875948B2 (en) | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
JP2010114165A (en) | 2008-11-04 | 2010-05-20 | Nikon Corp | Semiconductor device, laminated semiconductor device, and method for manufacturing laminated semiconductor device |
US8158515B2 (en) | 2009-02-03 | 2012-04-17 | International Business Machines Corporation | Method of making 3D integrated circuits |
KR20100090449A (en) * | 2009-02-06 | 2010-08-16 | 삼성전자주식회사 | A semiconductor device including uniform contact plugs and method of manufacturing the same |
US8426938B2 (en) | 2009-02-16 | 2013-04-23 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
KR101022580B1 (en) | 2009-02-19 | 2011-03-16 | 이상윤 | Mass storage semiconductor memory device and method for fabricating the same |
US8299583B2 (en) | 2009-03-05 | 2012-10-30 | International Business Machines Corporation | Two-sided semiconductor structure |
JP5985136B2 (en) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
US9406561B2 (en) * | 2009-04-20 | 2016-08-02 | International Business Machines Corporation | Three dimensional integrated circuit integration using dielectric bonding first and through via formation last |
JP5395542B2 (en) | 2009-07-13 | 2014-01-22 | 株式会社東芝 | Semiconductor device |
US8048790B2 (en) | 2009-09-17 | 2011-11-01 | Globalfoundries Inc. | Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration |
WO2011033601A1 (en) | 2009-09-21 | 2011-03-24 | 株式会社 東芝 | Method and apparatus for manufacturing three-dimensional integrated circuit |
TWI402941B (en) | 2009-12-03 | 2013-07-21 | Advanced Semiconductor Eng | Semiconductor structure and method for making the same |
US8399180B2 (en) | 2010-01-14 | 2013-03-19 | International Business Machines Corporation | Three dimensional integration with through silicon vias having multiple diameters |
US8415238B2 (en) | 2010-01-14 | 2013-04-09 | International Business Machines Corporation | Three dimensional integration and methods of through silicon via creation |
US8859390B2 (en) | 2010-02-05 | 2014-10-14 | International Business Machines Corporation | Structure and method for making crack stop for 3D integrated circuits |
JP5412316B2 (en) | 2010-02-23 | 2014-02-12 | パナソニック株式会社 | Semiconductor device, stacked semiconductor device, and manufacturing method of semiconductor device |
TWI505428B (en) * | 2010-03-11 | 2015-10-21 | Xintec Inc | Chip package and method for forming the same |
US8692382B2 (en) | 2010-03-11 | 2014-04-08 | Yu-Lin Yen | Chip package |
CN102299133B (en) | 2010-06-22 | 2014-02-19 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
CN102339813A (en) | 2010-07-14 | 2012-02-01 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
US8283754B2 (en) | 2010-08-13 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure with metal pad |
US8338917B2 (en) | 2010-08-13 | 2012-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple seal ring structure |
KR101677507B1 (en) | 2010-09-07 | 2016-11-21 | 삼성전자주식회사 | Method of manufacturing semiconductor devices |
US8502338B2 (en) | 2010-09-09 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate via waveguides |
US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
KR20120031811A (en) | 2010-09-27 | 2012-04-04 | 삼성전자주식회사 | Semiconductor devices and methods of fabricating the same |
US8525343B2 (en) * | 2010-09-28 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device with through-silicon via (TSV) and method of forming the same |
US8884431B2 (en) | 2011-09-09 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods and structures for semiconductor devices |
US8492241B2 (en) | 2010-10-14 | 2013-07-23 | International Business Machines Corporation | Method for simultaneously forming a through silicon via and a deep trench structure |
US8421193B2 (en) | 2010-11-18 | 2013-04-16 | Nanya Technology Corporation | Integrated circuit device having through via and method for preparing the same |
WO2012066703A1 (en) | 2010-11-19 | 2012-05-24 | パナソニック株式会社 | Semiconductor device and method for manufacturing same |
KR101697573B1 (en) | 2010-11-29 | 2017-01-19 | 삼성전자 주식회사 | Semiconductor device, fabricating method thereof, and semiconductor package comprising the semiconductor device |
TWI467746B (en) | 2010-12-15 | 2015-01-01 | Sony Corp | Semiconductor device, manufacturing method thereof, and electronic apparatus |
US8754507B2 (en) | 2011-01-18 | 2014-06-17 | Hong Kong Applied Science and Technology Research Institute Company Limited | Forming through-silicon-vias for multi-wafer integrated circuits |
US20120193785A1 (en) | 2011-02-01 | 2012-08-02 | Megica Corporation | Multichip Packages |
US8487410B2 (en) * | 2011-04-13 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon vias for semicondcutor substrate and method of manufacture |
JP2012227328A (en) | 2011-04-19 | 2012-11-15 | Sony Corp | Semiconductor device, semiconductor device manufacturing method, solid state image pickup device and electronic apparatus |
US8664736B2 (en) * | 2011-05-20 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same |
US8765598B2 (en) | 2011-06-02 | 2014-07-01 | Micron Technology, Inc. | Conductive structures, systems and devices including conductive structures and related methods |
US8896125B2 (en) * | 2011-07-05 | 2014-11-25 | Sony Corporation | Semiconductor device, fabrication method for a semiconductor device and electronic apparatus |
US8872345B2 (en) | 2011-07-07 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming grounded through-silicon vias in a semiconductor substrate |
US9076664B2 (en) * | 2011-10-07 | 2015-07-07 | Freescale Semiconductor, Inc. | Stacked semiconductor die with continuous conductive vias |
US8803322B2 (en) | 2011-10-13 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through substrate via structures and methods of forming the same |
TWI529939B (en) | 2012-02-08 | 2016-04-11 | Sony Corp | High frequency semiconductor device and its manufacturing method |
US9105628B1 (en) | 2012-03-29 | 2015-08-11 | Valery Dubin | Through substrate via (TSuV) structures and method of making the same |
US20130264688A1 (en) | 2012-04-06 | 2013-10-10 | Omnivision Technologies, Inc. | Method and apparatus providing integrated circuit system with interconnected stacked device wafers |
KR20130116607A (en) | 2012-04-16 | 2013-10-24 | 삼성전자주식회사 | Three dimensional semiconductor memory device and method of fabricating the same |
US8643074B2 (en) | 2012-05-02 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
US8603893B1 (en) | 2012-05-17 | 2013-12-10 | GlobalFoundries, Inc. | Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates |
JP6175701B2 (en) | 2012-06-04 | 2017-08-09 | マクロニックス インターナショナル カンパニー リミテッド | Manufacturing method of 3D multi-chip module |
US8697515B2 (en) | 2012-06-06 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
US8933544B2 (en) | 2012-07-12 | 2015-01-13 | Omnivision Technologies, Inc. | Integrated circuit stack with integrated electromagnetic interference shielding |
KR101932660B1 (en) | 2012-09-12 | 2018-12-26 | 삼성전자 주식회사 | Integrated circuit device having through silicon via structure and method of manufacturing the same |
KR102021884B1 (en) | 2012-09-25 | 2019-09-18 | 삼성전자주식회사 | Semiconductor Device Having Backside Bonding Structure |
US8803328B1 (en) | 2013-01-22 | 2014-08-12 | International Business Machines Corporation | Random coded integrated circuit structures and methods of making random coded integrated circuit structures |
US9159753B2 (en) | 2013-03-01 | 2015-10-13 | Semiconductor Components Industries, Llc | Image sensor pixels with self-aligned lateral anti-blooming structures |
US20150187701A1 (en) | 2013-03-12 | 2015-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Methods of Manufacture Thereof |
CN104051414B (en) | 2013-03-12 | 2018-03-23 | 台湾积体电路制造股份有限公司 | Interconnection structure and method |
US9041206B2 (en) | 2013-03-12 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
US9076715B2 (en) | 2013-03-12 | 2015-07-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for connecting dies and methods of forming the same |
US9536777B2 (en) | 2013-03-13 | 2017-01-03 | Taiwan Semiconductor Manufacutring Company, Ltd. | Interconnect apparatus and method |
US9287197B2 (en) * | 2013-03-15 | 2016-03-15 | Globalfoundries Singapore Pte. Ltd. | Through silicon vias |
US9006804B2 (en) | 2013-06-06 | 2015-04-14 | United Microelectronics Corp. | Semiconductor device and fabrication method thereof |
US8921901B1 (en) | 2013-06-10 | 2014-12-30 | United Microelectronics Corp. | Stacked CMOS image sensor and signal processor wafer structure |
US9059696B1 (en) | 2013-08-01 | 2015-06-16 | Altera Corporation | Interposer with programmable power gating granularity |
US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9412719B2 (en) | 2013-12-19 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect apparatus and method |
US10056353B2 (en) | 2013-12-19 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect apparatus and method |
KR102177702B1 (en) | 2014-02-03 | 2020-11-11 | 삼성전자주식회사 | Via Structures and Semiconductor Devices Having a Via plug |
US9425150B2 (en) | 2014-02-13 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-via interconnect structure and method of manufacture |
US9659840B2 (en) | 2014-02-21 | 2017-05-23 | Globalfoundries Inc. | Process flow for a combined CA and TSV oxide deposition |
US9192016B1 (en) | 2014-05-22 | 2015-11-17 | Cree, Inc. | Lighting apparatus with inductor current limiting for noise reduction |
US20150348874A1 (en) | 2014-05-29 | 2015-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC Interconnect Devices and Methods of Forming Same |
US9543257B2 (en) | 2014-05-29 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect devices and methods of forming same |
US9455158B2 (en) | 2014-05-30 | 2016-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC interconnect devices and methods of forming same |
TWI615976B (en) | 2014-07-07 | 2018-02-21 | 聯華電子股份有限公司 | Fin field effect transistor and method of manufacturing the same |
US9449914B2 (en) | 2014-07-17 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated circuits with redistribution lines |
-
2013
- 2013-12-19 US US14/135,153 patent/US10056353B2/en active Active
-
2014
- 2014-02-24 SG SG10201400154XA patent/SG10201400154XA/en unknown
-
2018
- 2018-07-30 US US16/048,777 patent/US11798916B2/en active Active
-
2023
- 2023-07-26 US US18/359,311 patent/US20230378139A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230378139A1 (en) | 2023-11-23 |
US11798916B2 (en) | 2023-10-24 |
US20180366447A1 (en) | 2018-12-20 |
US10056353B2 (en) | 2018-08-21 |
US20150179613A1 (en) | 2015-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201400154XA (en) | 3dic interconnect apparatus and method | |
GB201302787D0 (en) | Method and apparatus | |
GB201309568D0 (en) | Methods and apparatus | |
GB201311264D0 (en) | Apparatus and method | |
GB201306083D0 (en) | Method and apparatus | |
GB201319319D0 (en) | Apparatus and method | |
GB201309915D0 (en) | Stall-start method and apparatus | |
GB201306495D0 (en) | Apparatus and method | |
EP2946614A4 (en) | Methods and apparatus | |
GB201311150D0 (en) | Apparatus and method | |
GB201309689D0 (en) | Method and apparatus | |
GB201413597D0 (en) | Apparatus and method | |
GB201320657D0 (en) | Apparatus and method | |
GB201321397D0 (en) | Method and apparatus | |
GB201316671D0 (en) | Method and apparatus | |
GB201305942D0 (en) | Apparatus and method | |
GB201301728D0 (en) | Telcommunications apparatus and methods | |
GB201315763D0 (en) | Method and apparatus | |
GB201315003D0 (en) | Apparatus and method | |
GB201307787D0 (en) | Methods and Apparatus | |
GB2519734B (en) | Apparatus and Methods | |
GB201319453D0 (en) | Apparatus and method | |
GB201317037D0 (en) | Apparatus and method | |
GB201316737D0 (en) | Apparatus and Methods | |
GB201316037D0 (en) | Apparatus and method |