SE9701154D0 - Plan trenches - Google Patents

Plan trenches

Info

Publication number
SE9701154D0
SE9701154D0 SE9701154A SE9701154A SE9701154D0 SE 9701154 D0 SE9701154 D0 SE 9701154D0 SE 9701154 A SE9701154 A SE 9701154A SE 9701154 A SE9701154 A SE 9701154A SE 9701154 D0 SE9701154 D0 SE 9701154D0
Authority
SE
Sweden
Prior art keywords
trenches
plan
regions
extra
polysilicon
Prior art date
Application number
SE9701154A
Other languages
Swedish (sv)
Other versions
SE9701154L (en
SE520115C2 (en
Inventor
Anders Karl Sivert Soederbaerg
Nils Ola Oegren
Ernst Haakan Sjoedin
Olof Mikael Zackrisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9701154A priority Critical patent/SE520115C2/en
Publication of SE9701154D0 publication Critical patent/SE9701154D0/en
Priority to TW086105057A priority patent/TW356579B/en
Priority to AU67539/98A priority patent/AU6753998A/en
Priority to CA002285627A priority patent/CA2285627A1/en
Priority to CN98805442A priority patent/CN1110848C/en
Priority to EP98912851A priority patent/EP1018156A1/en
Priority to KR10-1999-7008655A priority patent/KR100374455B1/en
Priority to PCT/SE1998/000528 priority patent/WO1998043293A1/en
Priority to JP54556198A priority patent/JP2001519097A/en
Publication of SE9701154L publication Critical patent/SE9701154L/en
Publication of SE520115C2 publication Critical patent/SE520115C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Abstract

Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon 20 or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.
SE9701154A 1997-03-26 1997-03-26 The ditch with flat top SE520115C2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE9701154A SE520115C2 (en) 1997-03-26 1997-03-26 The ditch with flat top
TW086105057A TW356579B (en) 1997-03-26 1997-04-18 Planar trenches
JP54556198A JP2001519097A (en) 1997-03-26 1998-03-23 Manufacturing method of planar trench
CN98805442A CN1110848C (en) 1997-03-26 1998-03-23 Method for producing planar trenches
CA002285627A CA2285627A1 (en) 1997-03-26 1998-03-23 Method for producing planar trenches
AU67539/98A AU6753998A (en) 1997-03-26 1998-03-23 Method for producing planar trenches
EP98912851A EP1018156A1 (en) 1997-03-26 1998-03-23 Method for producing planar trenches
KR10-1999-7008655A KR100374455B1 (en) 1997-03-26 1998-03-23 Method for producing planar trenches
PCT/SE1998/000528 WO1998043293A1 (en) 1997-03-26 1998-03-23 Method for producing planar trenches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9701154A SE520115C2 (en) 1997-03-26 1997-03-26 The ditch with flat top

Publications (3)

Publication Number Publication Date
SE9701154D0 true SE9701154D0 (en) 1997-03-26
SE9701154L SE9701154L (en) 1998-09-27
SE520115C2 SE520115C2 (en) 2003-05-27

Family

ID=20406360

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9701154A SE520115C2 (en) 1997-03-26 1997-03-26 The ditch with flat top

Country Status (9)

Country Link
EP (1) EP1018156A1 (en)
JP (1) JP2001519097A (en)
KR (1) KR100374455B1 (en)
CN (1) CN1110848C (en)
AU (1) AU6753998A (en)
CA (1) CA2285627A1 (en)
SE (1) SE520115C2 (en)
TW (1) TW356579B (en)
WO (1) WO1998043293A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
JP2008028357A (en) 2006-07-24 2008-02-07 Hynix Semiconductor Inc Semiconductor device and method for manufacturing the same
JP4717122B2 (en) * 2009-01-13 2011-07-06 三菱電機株式会社 Method for manufacturing thin film solar cell
CN102468176B (en) * 2010-11-19 2013-12-18 上海华虹Nec电子有限公司 Method for making longitudinal region of super junction device
CN103822735A (en) * 2012-11-16 2014-05-28 无锡华润上华半导体有限公司 Wafer structure for pressure sensors and processing method of water structure
CN107507773B (en) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 Method for optimizing transistor structure of CMOS image sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207281B (en) * 1987-07-24 1992-02-05 Plessey Co Plc A method of providing refilled trenches
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
US5561073A (en) * 1992-03-13 1996-10-01 Jerome; Rick C. Method of fabricating an isolation trench for analog bipolar devices in harsh environments
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching

Also Published As

Publication number Publication date
KR100374455B1 (en) 2003-03-04
SE9701154L (en) 1998-09-27
WO1998043293A1 (en) 1998-10-01
AU6753998A (en) 1998-10-20
CA2285627A1 (en) 1998-10-01
TW356579B (en) 1999-04-21
EP1018156A1 (en) 2000-07-12
JP2001519097A (en) 2001-10-16
CN1110848C (en) 2003-06-04
CN1257609A (en) 2000-06-21
KR20010005591A (en) 2001-01-15
SE520115C2 (en) 2003-05-27

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Legal Events

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NUG Patent has lapsed