SE9102042D0 - GTO-TYRISTOR APPLICABLE PROCEDURE FOR PREPARING A GTO-TYRIST - Google Patents

GTO-TYRISTOR APPLICABLE PROCEDURE FOR PREPARING A GTO-TYRIST

Info

Publication number
SE9102042D0
SE9102042D0 SE9102042A SE9102042A SE9102042D0 SE 9102042 D0 SE9102042 D0 SE 9102042D0 SE 9102042 A SE9102042 A SE 9102042A SE 9102042 A SE9102042 A SE 9102042A SE 9102042 D0 SE9102042 D0 SE 9102042D0
Authority
SE
Sweden
Prior art keywords
gto
islands
layer
tyrist
tyristor
Prior art date
Application number
SE9102042A
Other languages
Swedish (sv)
Other versions
SE470226B (en
SE9102042L (en
Inventor
M Bakowski
Original Assignee
Abb Corporate Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Corporate Research filed Critical Abb Corporate Research
Priority to SE9102042A priority Critical patent/SE470226B/en
Publication of SE9102042D0 publication Critical patent/SE9102042D0/en
Priority to JP5501764A priority patent/JPH06511601A/en
Priority to PCT/SE1992/000472 priority patent/WO1993001620A1/en
Priority to EP92915295A priority patent/EP0592587A1/en
Publication of SE9102042L publication Critical patent/SE9102042L/en
Publication of SE470226B publication Critical patent/SE470226B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect

Abstract

The invention relates to a GTO-thyristor in a silicon disc which has on one side thereof an n-layer which is covered by an anode contact (50) and which on its opposite side is covered by a p-conducting base layer (51) on which a cathode structure and a gate structure are built. The cathode structure is comprised of upstanding islands having a greatest cross-dimension of 10-100 mu m or less, each having an n-layer (52) resting on a raised part of the base layer. The gate-electrodes (60) form a network which surrounds the islands on all sides thereof without being in contact therewith. This structure enables the islands to be given small dimensions, according to a method which only requires one sole fine-detailed mask, with the aid of etching, oxidizing and applying operations.
SE9102042A 1991-07-01 1991-07-01 GTO thyrists as well as the procedure for producing a GTO thyristor SE470226B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9102042A SE470226B (en) 1991-07-01 1991-07-01 GTO thyrists as well as the procedure for producing a GTO thyristor
JP5501764A JPH06511601A (en) 1991-07-01 1992-06-25 GTO thyristors and methods for manufacturing GTO thyristors
PCT/SE1992/000472 WO1993001620A1 (en) 1991-07-01 1992-06-25 A gto-thyristor and a method for the manufacture of a gto-thyristor
EP92915295A EP0592587A1 (en) 1991-07-01 1992-06-25 A gto-thyristor and a method for the manufacture of a gto-thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9102042A SE470226B (en) 1991-07-01 1991-07-01 GTO thyrists as well as the procedure for producing a GTO thyristor

Publications (3)

Publication Number Publication Date
SE9102042D0 true SE9102042D0 (en) 1991-07-01
SE9102042L SE9102042L (en) 1993-01-02
SE470226B SE470226B (en) 1993-12-06

Family

ID=20383215

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9102042A SE470226B (en) 1991-07-01 1991-07-01 GTO thyrists as well as the procedure for producing a GTO thyristor

Country Status (4)

Country Link
EP (1) EP0592587A1 (en)
JP (1) JPH06511601A (en)
SE (1) SE470226B (en)
WO (1) WO1993001620A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2801127B2 (en) * 1993-07-28 1998-09-21 日本碍子株式会社 Semiconductor device and manufacturing method thereof
US5841155A (en) * 1995-02-08 1998-11-24 Ngk Insulators, Ltd. Semiconductor device containing two joined substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382278A (en) * 1976-12-28 1978-07-20 Toshiba Corp Production of semiconductor device
DE3037316C2 (en) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Process for the production of power thyristors
JPS60132366A (en) * 1983-12-21 1985-07-15 Toshiba Corp Semiconductor device
JPH0715991B2 (en) * 1985-06-12 1995-02-22 株式会社東芝 Method for manufacturing semiconductor device
DE3869382D1 (en) * 1988-01-27 1992-04-23 Asea Brown Boveri DISABLED POWER SEMICONDUCTOR COMPONENT.
FR2638022B1 (en) * 1988-10-14 1992-08-28 Sgs Thomson Microelectronics ASYMMETRICAL THYRISTOR WITH EXTINGUISHING BY THE TRIGGER, PROVIDED WITH ANODE SHORT CIRCUITS AND HAVING A REDUCED TRIP CURRENT
DE69032766T2 (en) * 1989-04-04 1999-06-24 Hitachi Ltd Gate turn-off thyristor

Also Published As

Publication number Publication date
EP0592587A1 (en) 1994-04-20
WO1993001620A1 (en) 1993-01-21
JPH06511601A (en) 1994-12-22
SE470226B (en) 1993-12-06
SE9102042L (en) 1993-01-02

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