SE8803506L - YETTRIUM OXIDE COMPOSITION FOR APPLICATION IN CULTIVATION AND PROCEDURES FOR PRODUCING ANTI-FLEX FILM THEREOF - Google Patents

YETTRIUM OXIDE COMPOSITION FOR APPLICATION IN CULTIVATION AND PROCEDURES FOR PRODUCING ANTI-FLEX FILM THEREOF

Info

Publication number
SE8803506L
SE8803506L SE8803506A SE8803506A SE8803506L SE 8803506 L SE8803506 L SE 8803506L SE 8803506 A SE8803506 A SE 8803506A SE 8803506 A SE8803506 A SE 8803506A SE 8803506 L SE8803506 L SE 8803506L
Authority
SE
Sweden
Prior art keywords
oxide composition
yettrium
cultivation
procedures
application
Prior art date
Application number
SE8803506A
Other languages
Swedish (sv)
Other versions
SE8803506D0 (en
Inventor
S Tsuboi
Y Matsushita
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE8803506L publication Critical patent/SE8803506L/en
Publication of SE8803506D0 publication Critical patent/SE8803506D0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Sustainable Development (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Composition for use in evaporation as an optical anti-reflection film for compounds of III - V groups such as GaAs, Si and, more particularly, to an yttrium oxide composition for use in evaporation which contains titanium oxide and zirconium oxide. The invention also relates to a process for preparing the optical anti-reflection film using the yttrium oxide composition for use in evaporation. The invention can be utilized for temperature detecting device of a temperature sensor, laser diode, solar battery, etc. wherein optical fibers are incorporated.
SE8803506A 1987-02-04 1988-10-03 YETTRIUM OXIDE COMPOSITION FOR APPLICATION IN CULTIVATION AND PROCEDURES FOR PRODUCING ANTI-FLEX FILM THEREOF SE8803506D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62023946A JPS63192856A (en) 1987-02-04 1987-02-04 Production of yttrium oxide composition for vapor deposition and antireflection film

Publications (2)

Publication Number Publication Date
SE8803506L true SE8803506L (en) 1988-10-03
SE8803506D0 SE8803506D0 (en) 1988-10-03

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8803506A SE8803506D0 (en) 1987-02-04 1988-10-03 YETTRIUM OXIDE COMPOSITION FOR APPLICATION IN CULTIVATION AND PROCEDURES FOR PRODUCING ANTI-FLEX FILM THEREOF

Country Status (6)

Country Link
JP (1) JPS63192856A (en)
KR (1) KR910008716B1 (en)
CN (1) CN1017164B (en)
DE (2) DE3890060T (en)
SE (1) SE8803506D0 (en)
WO (1) WO1988005963A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850371B2 (en) * 1989-06-19 1999-01-27 松下電器産業株式会社 Image output device
CN102140621A (en) * 2011-03-10 2011-08-03 苏州大学 Preparation method of dense composite titanium dioxide film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (en) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Process for anti-catalytic coating of thermocouples

Also Published As

Publication number Publication date
JPS63192856A (en) 1988-08-10
DE3890060T (en) 1989-03-23
WO1988005963A1 (en) 1988-08-11
KR890700927A (en) 1989-04-28
CN87107819A (en) 1988-08-17
DE3890060C2 (en) 1990-08-16
CN1017164B (en) 1992-06-24
KR910008716B1 (en) 1991-10-19
SE8803506D0 (en) 1988-10-03

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