KR890700927A - Method for producing yttrium oxide composition for deposition and antireflection film - Google Patents

Method for producing yttrium oxide composition for deposition and antireflection film

Info

Publication number
KR890700927A
KR890700927A KR1019880701199A KR880701199A KR890700927A KR 890700927 A KR890700927 A KR 890700927A KR 1019880701199 A KR1019880701199 A KR 1019880701199A KR 880701199 A KR880701199 A KR 880701199A KR 890700927 A KR890700927 A KR 890700927A
Authority
KR
South Korea
Prior art keywords
deposition
antireflection film
yttrium oxide
oxide composition
producing yttrium
Prior art date
Application number
KR1019880701199A
Other languages
Korean (ko)
Other versions
KR910008716B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR890700927A publication Critical patent/KR890700927A/en
Application granted granted Critical
Publication of KR910008716B1 publication Critical patent/KR910008716B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Surface Treatment Of Glass (AREA)
KR1019880701199A 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof KR910008716B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-23946 1987-02-04
JP62023946A JPS63192856A (en) 1987-02-04 1987-02-04 Production of yttrium oxide composition for vapor deposition and antireflection film
PCT/JP1988/000103 WO1988005963A1 (en) 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof

Publications (2)

Publication Number Publication Date
KR890700927A true KR890700927A (en) 1989-04-28
KR910008716B1 KR910008716B1 (en) 1991-10-19

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880701199A KR910008716B1 (en) 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof

Country Status (6)

Country Link
JP (1) JPS63192856A (en)
KR (1) KR910008716B1 (en)
CN (1) CN1017164B (en)
DE (2) DE3890060C2 (en)
SE (1) SE8803506L (en)
WO (1) WO1988005963A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850371B2 (en) * 1989-06-19 1999-01-27 松下電器産業株式会社 Image output device
CN102140621A (en) * 2011-03-10 2011-08-03 苏州大学 Preparation method of dense composite titanium dioxide film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (en) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Process for anti-catalytic coating of thermocouples

Also Published As

Publication number Publication date
DE3890060T (en) 1989-03-23
SE8803506D0 (en) 1988-10-03
SE8803506L (en) 1988-10-03
JPS63192856A (en) 1988-08-10
CN1017164B (en) 1992-06-24
CN87107819A (en) 1988-08-17
WO1988005963A1 (en) 1988-08-11
KR910008716B1 (en) 1991-10-19
DE3890060C2 (en) 1990-08-16

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19941018

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee