SE8500924L - Halvledaranordning innefattande en integrerad halvledarkrets av cmos-typ - Google Patents

Halvledaranordning innefattande en integrerad halvledarkrets av cmos-typ

Info

Publication number
SE8500924L
SE8500924L SE8500924A SE8500924A SE8500924L SE 8500924 L SE8500924 L SE 8500924L SE 8500924 A SE8500924 A SE 8500924A SE 8500924 A SE8500924 A SE 8500924A SE 8500924 L SE8500924 L SE 8500924L
Authority
SE
Sweden
Prior art keywords
circuit
semiconductor device
thyristor
cmos
inputs
Prior art date
Application number
SE8500924A
Other languages
English (en)
Swedish (sv)
Other versions
SE8500924D0 (sv
SE455552B (sv
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE8500924A priority Critical patent/SE455552B/sv
Publication of SE8500924D0 publication Critical patent/SE8500924D0/xx
Priority to US06/832,786 priority patent/US4694315A/en
Publication of SE8500924L publication Critical patent/SE8500924L/
Publication of SE455552B publication Critical patent/SE455552B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
SE8500924A 1985-02-26 1985-02-26 Halvledaranordning innefattande en overspenningsskyddskrets SE455552B (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE8500924A SE455552B (sv) 1985-02-26 1985-02-26 Halvledaranordning innefattande en overspenningsskyddskrets
US06/832,786 US4694315A (en) 1985-02-26 1986-02-26 CMOS overvoltage protection circuit utilizing thyristor and majority carrier injecting anti-parallel diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8500924A SE455552B (sv) 1985-02-26 1985-02-26 Halvledaranordning innefattande en overspenningsskyddskrets

Publications (3)

Publication Number Publication Date
SE8500924D0 SE8500924D0 (sv) 1985-02-26
SE8500924L true SE8500924L (sv) 1986-08-27
SE455552B SE455552B (sv) 1988-07-18

Family

ID=20359268

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8500924A SE455552B (sv) 1985-02-26 1985-02-26 Halvledaranordning innefattande en overspenningsskyddskrets

Country Status (2)

Country Link
US (1) US4694315A ( )
SE (1) SE455552B ( )

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164138A (ja) * 1984-09-06 1986-04-02 Nec Corp モノリシツク集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
JPH0770614B2 (ja) * 1988-06-14 1995-07-31 日本電気株式会社 半導体集積回路装置
US4896243A (en) * 1988-12-20 1990-01-23 Texas Instruments Incorporated Efficient ESD input protection scheme
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
EP0538507B1 (de) * 1991-10-22 1996-12-27 Deutsche ITT Industries GmbH Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen
US5440151A (en) * 1993-04-09 1995-08-08 Matra Mhs Electrostatic discharge protection device for MOS integrated circuits
FR2703849B1 (fr) * 1993-04-09 1995-06-23 Matra Mhs Dispositif de protection contre les decharges electrostatiques pour circuits integres.
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
JP4256544B2 (ja) 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device
US20140167099A1 (en) 2011-03-10 2014-06-19 Qpx Gmbh Integrated circuit including silicon controlled rectifier

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475653A (en) * 1965-01-11 1969-10-28 Res Iii Inc Electrical circuit protector
US3573550A (en) * 1969-03-07 1971-04-06 M & T Chemicals Inc Automatically resetting transient protection device
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages

Also Published As

Publication number Publication date
SE8500924D0 (sv) 1985-02-26
SE455552B (sv) 1988-07-18
US4694315A (en) 1987-09-15

Similar Documents

Publication Publication Date Title
US4224634A (en) Externally controlled semiconductor devices with integral thyristor and bridging FET components
SE8500924D0 (sv) Halvledaranordning innefattande en integrerad halvledarkrets av cmos-typ
SE7808731L (sv) Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
KR970705861A (ko) 정전기 보호 회로(electrostatic protection circuit)
KR910005468A (ko) 반도체 집적회로장치
MY106702A (en) Semiconductor device having protection circuit.
SE8106947L (sv) Anordning for skydd mot overhettning och overspenning vid en spenningsbegrensande krets
GB1438232A (en) Semiconductor protective elements
GB1163795A (en) Over-Voltage Protection Circuit
JPS5918576U (ja) サイリスタの過電圧保護回路
KR940006258A (ko) 반도체장치 및 고체촬상장치의 수평레지스터
ATE93115T1 (de) Einrichtung zum ermoeglichen der wiederherstellung des stroms einer leitung im falle des durchschlagens eines oder mehrerer elemente einer serienschaltung.
KR960030398A (ko) Esd 보호 회로를 갖는 반도체장치
JPS577151A (en) Monolithic ic circuit
SE8302601L (sv) Anordning med seriekopplade tyristorer
JPS57190359A (en) Protecting device for semiconductor
US3256448A (en) Protection circuit of a transistor type direct current constant voltage device
GB1393748A (en) Voltage regulating circuits
JPS57190360A (en) Protecting device for semiconductor
JPS5580352A (en) Transistor with high breakdown voltage
SU513441A1 (ru) Устройство защиты тиристоров от перенапр жений
US3261983A (en) Transistor switch employing diodes for voltage protection
JPS6446973A (en) Semiconductor device
SU610094A1 (ru) Стабилизатор напр жени посто нного тока
SU830987A1 (ru) Устройство дл защиты

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 8500924-9

Format of ref document f/p: F

NUG Patent has lapsed