SE8301128L - Styrkrets for omkoppling av monolitiskt integrerbara belastningar - Google Patents

Styrkrets for omkoppling av monolitiskt integrerbara belastningar

Info

Publication number
SE8301128L
SE8301128L SE8301128A SE8301128A SE8301128L SE 8301128 L SE8301128 L SE 8301128L SE 8301128 A SE8301128 A SE 8301128A SE 8301128 A SE8301128 A SE 8301128A SE 8301128 L SE8301128 L SE 8301128L
Authority
SE
Sweden
Prior art keywords
transistors
circuit
control circuit
loads
monolitic
Prior art date
Application number
SE8301128A
Other languages
Unknown language ( )
English (en)
Other versions
SE451521B (sv
SE8301128D0 (sv
Inventor
F Stefani
C Cini
C Diazzi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE8301128D0 publication Critical patent/SE8301128D0/sv
Publication of SE8301128L publication Critical patent/SE8301128L/sv
Publication of SE451521B publication Critical patent/SE451521B/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
SE8301128A 1981-11-13 1983-03-01 Styrkrets for omkoppling av induktiva belastningar SE451521B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8125054A IT1211132B (it) 1981-11-13 1981-11-13 Circuito di comando in commutazione di carichi induttivi integrabile monoliticamente.

Publications (3)

Publication Number Publication Date
SE8301128D0 SE8301128D0 (sv) 1983-03-01
SE8301128L true SE8301128L (sv) 1984-09-02
SE451521B SE451521B (sv) 1987-10-12

Family

ID=11215554

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301128A SE451521B (sv) 1981-11-13 1983-03-01 Styrkrets for omkoppling av induktiva belastningar

Country Status (7)

Country Link
US (1) US4549095A (sv)
JP (1) JPS5855582B2 (sv)
DE (1) DE3241976A1 (sv)
FR (1) FR2516722B1 (sv)
GB (1) GB2112598B (sv)
IT (1) IT1211132B (sv)
SE (1) SE451521B (sv)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142495B (en) * 1983-06-24 1986-09-17 Barry Wayne Williams Switch-off circuits for transistors and gate turn-off thyristors
IT1219780B (it) * 1983-12-20 1990-05-24 Ates Componenti Elettron Circuito di comando in commutazione di carichi induttivi,integrabile monoliticamente,comprendente uno stadio finale di tipo darlington
FR2561471B1 (fr) * 1984-03-16 1986-09-19 Thomson Csf Circuit de commande de commutation d'un transistor de puissance
IT1218854B (it) * 1984-11-07 1990-04-24 Ates Componenti Elettron Circuito di comando, integrato monoliticamente, per la commutazione di transistori
IT1214616B (it) * 1985-06-19 1990-01-18 Ates Componenti Elettron Circuito di commutazione, integrabile monoliticamente, ad elevato rendimento.
IT1209647B (it) * 1985-06-24 1989-08-30 Sgs Microelettronica Spa Circuito antisaturazione per transistore pnp integrato.
JPS6231377A (ja) * 1985-07-30 1987-02-10 Mitsubishi Electric Corp トランジスタインバ−タのベ−スドライブ回路
IT1188335B (it) * 1986-02-06 1988-01-07 Sgs Microelettronica Spa Dispositivo di controllo in retroazione per lo spegnimento di un transistore
US4791313A (en) * 1986-11-13 1988-12-13 Fairchild Semiconductor Corp. Bipolar transistor switching enhancement circuit
US4823070A (en) 1986-11-18 1989-04-18 Linear Technology Corporation Switching voltage regulator circuit
US4945425A (en) * 1987-03-30 1990-07-31 Videonics Incorporated Method and an apparatus for controlling a video cassette recorder
EP0287525B1 (en) * 1987-04-14 1992-06-10 STMicroelectronics S.r.l. Transitory current recirculation through a power switching transistor driving an inductive load
FR2617351A1 (fr) * 1987-06-26 1988-12-30 Radiotechnique Compelec Etage de sortie pour une commutation du type a collecteur ouvert a tension de sortie elevee
EP0314013B1 (de) * 1987-10-26 1991-08-14 Siemens Aktiengesellschaft Verfahren zur Basisstromregelung eines Schalttransistors und Schaltungsanordnung zur Durchführung des Verfahrens
US5142171A (en) * 1988-04-05 1992-08-25 Hitachi, Ltd. Integrated circuit for high side driving of an inductive load
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
JPH02168714A (ja) * 1988-12-22 1990-06-28 Omron Tateisi Electron Co スイッチ回路
JP2796740B2 (ja) * 1989-09-29 1998-09-10 日本テキサス・インスツルメンツ株式会社 駆動回路
JP2811941B2 (ja) * 1990-09-05 1998-10-15 富士電機株式会社 スイッチングトランジスタの制御回路
EP0489935B1 (de) * 1990-11-09 1995-11-02 Siemens Aktiengesellschaft MOSFET-Schalter für eine induktive Last
JPH06196746A (ja) * 1992-12-25 1994-07-15 Canon Inc 光電変換装置、駆動回路、半導体発光素子駆動回路、記憶装置、及びシーケンシャルアクセスメモリー
US5321313A (en) * 1993-01-07 1994-06-14 Texas Instruments Incorporated Controlled power MOSFET switch-off circuit
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
JPH07235868A (ja) * 1994-02-23 1995-09-05 Nec Corp 電流バッファ回路
US5745587A (en) * 1995-06-07 1998-04-28 Bausch & Lomb Incorporated Hearing aid amplifier circuitry
US5821803A (en) * 1997-06-19 1998-10-13 Maxim Integrated Products, Inc. Method and electronic device for reducing transition time of transistor switching circuits
JP5766992B2 (ja) * 2011-03-24 2015-08-19 トランスフォーム・ジャパン株式会社 スイッチング回路装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB881182A (en) * 1959-09-18 1961-11-01 Automatic Telephone & Elect Improvements in or relating to transistor switching circuits
US3789241A (en) * 1973-04-02 1974-01-29 Bell Telephone Labor Inc Electronic pulse amplifier circuits
US3958136A (en) * 1974-08-09 1976-05-18 Bell Telephone Laboratories, Incorporated Level shifter circuit
US4092551A (en) * 1976-05-20 1978-05-30 International Business Machines Corporation A.C. powered speed up circuit
JPS5758625Y2 (sv) * 1977-02-17 1982-12-15
JPS53116728U (sv) * 1977-02-17 1978-09-16
JPS53116725U (sv) * 1977-02-17 1978-09-16
US4234805A (en) * 1978-03-15 1980-11-18 Evc, Inc. Circuit and method for paralleling power transistors
DE2852943C3 (de) * 1978-12-07 1981-09-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung mit einem verzögerungsbehafteten Halbleiterschalter
GB2053606B (en) * 1979-06-01 1983-09-14 Gould Advance Ltd Semi-conductor switching circuits
FR2470484A1 (fr) * 1979-11-23 1981-05-29 Thomson Csf Procede de commande d'un montage darlington et montage darlington a faibles pertes
DE3120695A1 (de) * 1981-05-23 1982-12-09 Robert Bosch Gmbh, 7000 Stuttgart "schaltungsanordnung mit einem endtransistor zum ein- und ausschalten eines verbrauchers, insbesondere der primaerwicklung einer zu der zuendanlage einer brennkraftmaschine gehoerenden zuendspule"

Also Published As

Publication number Publication date
SE451521B (sv) 1987-10-12
JPS56165960A (en) 1981-12-19
GB2112598B (en) 1985-09-18
SE8301128D0 (sv) 1983-03-01
IT1211132B (it) 1989-09-29
FR2516722A1 (fr) 1983-05-20
GB2112598A (en) 1983-07-20
DE3241976A1 (de) 1983-06-16
JPS5855582B2 (ja) 1983-12-10
US4549095A (en) 1985-10-22
DE3241976C2 (sv) 1990-03-08
FR2516722B1 (fr) 1986-04-25
IT8125054A0 (it) 1981-11-13

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