SE8103222L - Semiconductor device of high voltage type - Google Patents

Semiconductor device of high voltage type

Info

Publication number
SE8103222L
SE8103222L SE8103222A SE8103222A SE8103222L SE 8103222 L SE8103222 L SE 8103222L SE 8103222 A SE8103222 A SE 8103222A SE 8103222 A SE8103222 A SE 8103222A SE 8103222 L SE8103222 L SE 8103222L
Authority
SE
Sweden
Prior art keywords
high voltage
semiconductor device
currents
capacitive charging
capability
Prior art date
Application number
SE8103222A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE457837B (en
Inventor
V A K Temple
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE8103222L publication Critical patent/SE8103222L/en
Publication of SE457837B publication Critical patent/SE457837B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING IMPROVEMENTS TO THE dv/dt CAPABILITY AND PLASMA SPREADING A semiconductor device used for high voltage applications exhibits reduced susceptibility to being inadvertently turned on by capacitive charging currents generated by relatively high voltage transients impressed across an anode and a cathode of the device. The capacitive charging currents are manifested as gate currents which in a thyristor render the device conductive it they exceed a critical valve, and in a transistor are multiplied by the current gain. A capacitor integral with the semiconductor device structure is coupled to a gate region of the device to divert a portion of transient-generated capacitive charging currents, thereby reducing the associated gate currents and improving the dv/dt capability of the device.
SE8103222A 1980-05-23 1981-05-21 Semiconductor device of high voltage type SE457837B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15274280A 1980-05-23 1980-05-23

Publications (2)

Publication Number Publication Date
SE8103222L true SE8103222L (en) 1981-11-24
SE457837B SE457837B (en) 1989-01-30

Family

ID=22544224

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8103222A SE457837B (en) 1980-05-23 1981-05-21 Semiconductor device of high voltage type

Country Status (5)

Country Link
JP (1) JPS5710972A (en)
CA (1) CA1163020A (en)
CH (1) CH656485A5 (en)
DE (1) DE3120254A1 (en)
SE (1) SE457837B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810656B2 (en) * 1977-01-25 1983-02-26 矢崎総業株式会社 Solar heating/cooling/water heating equipment
JPS58134470A (en) * 1982-02-05 1983-08-10 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor of amplifying gate structure
JPH0680821B2 (en) * 1989-05-01 1994-10-12 株式会社東芝 High sensitivity triac
US5592118A (en) * 1994-03-09 1997-01-07 Cooper Industries, Inc. Ignition exciter circuit with thyristors having high di/dt and high voltage blockage
US5970324A (en) * 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US5656966A (en) * 1994-03-09 1997-08-12 Cooper Industries, Inc. Turbine engine ignition exciter circuit including low voltage lockout control
US5981982A (en) * 1994-03-09 1999-11-09 Driscoll; John Cuervo Dual gated power electronic switching devices
US7355300B2 (en) 2004-06-15 2008-04-08 Woodward Governor Company Solid state turbine engine ignition exciter having elevated temperature operational capability

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917863B2 (en) * 1976-11-04 1984-04-24 三菱電機株式会社 thyristor
JPS5942991B2 (en) * 1977-05-23 1984-10-18 株式会社日立製作所 thyristor
DE2855265A1 (en) * 1978-12-21 1980-07-10 Bbc Brown Boveri & Cie THYRISTOR

Also Published As

Publication number Publication date
DE3120254C2 (en) 1993-09-23
JPS5710972A (en) 1982-01-20
CA1163020A (en) 1984-02-28
SE457837B (en) 1989-01-30
CH656485A5 (en) 1986-06-30
DE3120254A1 (en) 1982-05-27

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