SE7613232L - Forfarande for tillverkning av halvledaranordningar - Google Patents

Forfarande for tillverkning av halvledaranordningar

Info

Publication number
SE7613232L
SE7613232L SE7613232A SE7613232A SE7613232L SE 7613232 L SE7613232 L SE 7613232L SE 7613232 A SE7613232 A SE 7613232A SE 7613232 A SE7613232 A SE 7613232A SE 7613232 L SE7613232 L SE 7613232L
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Application number
SE7613232A
Other languages
English (en)
Swedish (sv)
Inventor
M F Chang
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7613232L publication Critical patent/SE7613232L/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE7613232A 1975-11-26 1976-11-25 Forfarande for tillverkning av halvledaranordningar SE7613232L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/635,327 US4042448A (en) 1975-11-26 1975-11-26 Post TGZM surface etch

Publications (1)

Publication Number Publication Date
SE7613232L true SE7613232L (sv) 1977-05-27

Family

ID=24547343

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7613232A SE7613232L (sv) 1975-11-26 1976-11-25 Forfarande for tillverkning av halvledaranordningar

Country Status (6)

Country Link
US (1) US4042448A (fr)
JP (1) JPS5275173A (fr)
DE (1) DE2653287A1 (fr)
FR (1) FR2333347A1 (fr)
GB (1) GB1557300A (fr)
SE (1) SE7613232L (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076559A (en) * 1977-03-18 1978-02-28 General Electric Company Temperature gradient zone melting through an oxide layer
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
FR2815470A1 (fr) * 2000-10-12 2002-04-19 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
DE102004021228B4 (de) * 2004-04-30 2009-01-08 Infineon Technologies Ag Verfahren zum Einbringen eines Grabens in einen Halbleiterkörper eines Kompensationsbauelementes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272748A (en) * 1964-06-29 1966-09-13 Western Electric Co Etching of silicon and germanium
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3699402A (en) * 1970-07-27 1972-10-17 Gen Electric Hybrid circuit power module
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
DE2450902A1 (de) * 1973-10-30 1975-05-07 Gen Electric Elektrische durchfuehrungsleiter in halbleitervorrichtungen
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats

Also Published As

Publication number Publication date
GB1557300A (en) 1979-12-05
JPS5275173A (en) 1977-06-23
DE2653287A1 (de) 1977-06-08
FR2333347A1 (fr) 1977-06-24
US4042448A (en) 1977-08-16

Similar Documents

Publication Publication Date Title
GB1543235A (en) Methods of manufacturing semiconductor devices
GB1550645A (en) Methods of manufacturing semiconductor devices
SE433208B (sv) Forfarande for framstellning av fenoletrar
SE427748B (sv) Forfarande for framstellning av frostherdig betong
IT1106505B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
SE420354B (sv) Forfarande for teknisk framstellning av forbeskiktade objektplattor
IT1071194B (it) Procedimento per la fabbricazione di dispositivi semiconduttori di memoria
SE7600217L (sv) Anordning for framstellning av termoplastror
SE429038B (sv) Anordning for stegvis tillverkning av somlosa burkar
SE415265B (sv) Forfarnde for antistatisk behandling av plaster
NO151040C (no) Analogifremgangsmaate for fremstilling av terapeutisk aktive 5-halogenpyrimid-2-oner
SE7605139L (sv) Forfarande for framstellning av vattenupptagande cellulosaetrar
SE7605555L (sv) Framstellning av kub-pa-kant-orienterat kiselstal
SE426595B (sv) Forfarande for framstellning av cellulosaetrar
SE7605368L (sv) Forfarande for framstellning av slangar
SE7608767L (sv) Forfarande for framstellning av glasforemal
SE7613232L (sv) Forfarande for tillverkning av halvledaranordningar
SE7601541L (sv) Halvledarlikriktare
NO139555C (no) Fremgangsmaate for fremstilling av fosgen
SE7500653L (sv) Forfarande for framstellning av stalband
SE7614181L (sv) Forfarande for framstellning av antibiotika
SE7606116L (sv) Forfarande for framstellning av 3-fenoxidbensaldehyder
NO144741C (no) Analogifremgangsmaate for fremstilling av terapeutisk aktive tiopyrano-pyrazoler
SE7513879L (sv) Forfarande for syntes av karbamider
SE7604781L (sv) Forfarande for framstellning av diarylhydroxibutylaminer