SE7413660L - - Google Patents
Info
- Publication number
- SE7413660L SE7413660L SE7413660A SE7413660A SE7413660L SE 7413660 L SE7413660 L SE 7413660L SE 7413660 A SE7413660 A SE 7413660A SE 7413660 A SE7413660 A SE 7413660A SE 7413660 L SE7413660 L SE 7413660L
- Authority
- SE
- Sweden
- Prior art keywords
- silicon
- metal
- layer
- target
- silicide
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1448610 Sputtering silicides RCA CORPORATION 22 Oct 1974 [1 Nov 1973] 45621/74 Heading C7F [Also in Division H1] In a method of depositing a refractory metal and silicon layer on a body of silicon, a target of the metal and silicon in the stoichiometric ratio of the silicide is sputtered to obtain a layer which also contains the metal and silicon in this ratio. The resistivity of the layer may be reduced by a subsequent annealing step. The target may be of the metal silicide and the metal is preferably tungsten but may alternatively be platinum, molybdenum, rhodium or rhenium. The deposited layer may be reacted with or penetrated into the silicon body by heating to 1200 C.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41181973A | 1973-11-01 | 1973-11-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7413660L true SE7413660L (en) | 1975-05-02 |
Family
ID=23630455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7413660A SE7413660L (en) | 1973-11-01 | 1974-10-30 |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5080790A (en) |
BE (1) | BE821564A (en) |
DE (1) | DE2450341A1 (en) |
FR (1) | FR2250198B1 (en) |
GB (1) | GB1448610A (en) |
IN (1) | IN140056B (en) |
IT (1) | IT1022138B (en) |
NL (1) | NL7414233A (en) |
SE (1) | SE7413660L (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114366A (en) * | 1977-03-16 | 1978-10-05 | Toshiba Corp | Semiconductor device |
US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
US4507851A (en) * | 1982-04-30 | 1985-04-02 | Texas Instruments Incorporated | Process for forming an electrical interconnection system on a semiconductor |
JPS58202553A (en) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | Semiconductor device |
GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
JPS6014852U (en) * | 1983-07-07 | 1985-01-31 | 屋敷 静雄 | Driver with sliding door |
NL9000795A (en) * | 1990-04-04 | 1991-11-01 | Imec Inter Uni Micro Electr | METHOD FOR APPLYING METAL SILICIDES TO SILICON. |
-
1974
- 1974-09-11 IN IN2028/CAL/74A patent/IN140056B/en unknown
- 1974-09-19 IT IT2749874A patent/IT1022138B/en active
- 1974-10-22 GB GB4562174A patent/GB1448610A/en not_active Expired
- 1974-10-23 DE DE19742450341 patent/DE2450341A1/en active Pending
- 1974-10-28 FR FR7436005A patent/FR2250198B1/fr not_active Expired
- 1974-10-28 BE BE149953A patent/BE821564A/en unknown
- 1974-10-29 JP JP12533474A patent/JPS5080790A/ja active Pending
- 1974-10-30 SE SE7413660A patent/SE7413660L/xx not_active Application Discontinuation
- 1974-10-31 NL NL7414233A patent/NL7414233A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2250198B1 (en) | 1978-06-09 |
JPS5080790A (en) | 1975-07-01 |
GB1448610A (en) | 1976-09-08 |
BE821564A (en) | 1975-02-17 |
FR2250198A1 (en) | 1975-05-30 |
NL7414233A (en) | 1975-05-06 |
IN140056B (en) | 1976-09-04 |
DE2450341A1 (en) | 1975-05-07 |
IT1022138B (en) | 1978-03-20 |
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