SE7413660L - - Google Patents

Info

Publication number
SE7413660L
SE7413660L SE7413660A SE7413660A SE7413660L SE 7413660 L SE7413660 L SE 7413660L SE 7413660 A SE7413660 A SE 7413660A SE 7413660 A SE7413660 A SE 7413660A SE 7413660 L SE7413660 L SE 7413660L
Authority
SE
Sweden
Prior art keywords
silicon
metal
layer
target
silicide
Prior art date
Application number
SE7413660A
Inventor
R Amantea
J H Banfield
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7413660L publication Critical patent/SE7413660L/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682Silicides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1448610 Sputtering silicides RCA CORPORATION 22 Oct 1974 [1 Nov 1973] 45621/74 Heading C7F [Also in Division H1] In a method of depositing a refractory metal and silicon layer on a body of silicon, a target of the metal and silicon in the stoichiometric ratio of the silicide is sputtered to obtain a layer which also contains the metal and silicon in this ratio. The resistivity of the layer may be reduced by a subsequent annealing step. The target may be of the metal silicide and the metal is preferably tungsten but may alternatively be platinum, molybdenum, rhodium or rhenium. The deposited layer may be reacted with or penetrated into the silicon body by heating to 1200 C.
SE7413660A 1973-11-01 1974-10-30 SE7413660L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41181973A 1973-11-01 1973-11-01

Publications (1)

Publication Number Publication Date
SE7413660L true SE7413660L (en) 1975-05-02

Family

ID=23630455

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7413660A SE7413660L (en) 1973-11-01 1974-10-30

Country Status (9)

Country Link
JP (1) JPS5080790A (en)
BE (1) BE821564A (en)
DE (1) DE2450341A1 (en)
FR (1) FR2250198B1 (en)
GB (1) GB1448610A (en)
IN (1) IN140056B (en)
IT (1) IT1022138B (en)
NL (1) NL7414233A (en)
SE (1) SE7413660L (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114366A (en) * 1977-03-16 1978-10-05 Toshiba Corp Semiconductor device
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
US4507851A (en) * 1982-04-30 1985-04-02 Texas Instruments Incorporated Process for forming an electrical interconnection system on a semiconductor
JPS58202553A (en) * 1982-05-21 1983-11-25 Toshiba Corp Semiconductor device
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
JPS6014852U (en) * 1983-07-07 1985-01-31 屋敷 静雄 Driver with sliding door
NL9000795A (en) * 1990-04-04 1991-11-01 Imec Inter Uni Micro Electr METHOD FOR APPLYING METAL SILICIDES TO SILICON.

Also Published As

Publication number Publication date
FR2250198B1 (en) 1978-06-09
JPS5080790A (en) 1975-07-01
GB1448610A (en) 1976-09-08
BE821564A (en) 1975-02-17
FR2250198A1 (en) 1975-05-30
NL7414233A (en) 1975-05-06
IN140056B (en) 1976-09-04
DE2450341A1 (en) 1975-05-07
IT1022138B (en) 1978-03-20

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