SE521637C2 - Stacked VCO resonator - Google Patents

Stacked VCO resonator

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Publication number
SE521637C2
SE521637C2 SE9903256A SE9903256A SE521637C2 SE 521637 C2 SE521637 C2 SE 521637C2 SE 9903256 A SE9903256 A SE 9903256A SE 9903256 A SE9903256 A SE 9903256A SE 521637 C2 SE521637 C2 SE 521637C2
Authority
SE
Sweden
Prior art keywords
capacitor
varicap
vco
integrated
capacitors
Prior art date
Application number
SE9903256A
Other languages
Swedish (sv)
Other versions
SE9903256L (en
SE9903256D0 (en
Inventor
Magnus Leif Andre Nilsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9903256A priority Critical patent/SE521637C2/en
Publication of SE9903256D0 publication Critical patent/SE9903256D0/en
Priority to AU74647/00A priority patent/AU7464700A/en
Priority to JP2001524230A priority patent/JP2003509939A/en
Priority to PCT/SE2000/001713 priority patent/WO2001020771A1/en
Priority to CN00812777.8A priority patent/CN1373927A/en
Priority to EP00963198A priority patent/EP1214779A1/en
Publication of SE9903256L publication Critical patent/SE9903256L/en
Publication of SE521637C2 publication Critical patent/SE521637C2/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

An integrated VCO (10), preferably in a radio ASIC (110), with a resonator comprising an M-M capacitor (80) and a varicap (90), wherein the M-M capacitor (80) is connected to and stacked on top of the varicap (90). Typically, the stacking of the M-M capacitor on top of the varicap is not possible in an ASIC-process due to parasitic capacitance (120, 130). However, since the M-M capacitor (80) already is connected (100) to the varicap (90), the parasitic capacitance (130) is short-circuited. Thus, the stacking of the M-M capacitor on top of the varicap implies reduced resonator dimension saving valuable ASIC area (110) while improving performance.

Description

l0 15 20 25 30 5 f? l (5 23 7 2 kondensatorer, varvid kondensatorema är anslutna till och staplade på varicap-kon- densatorerna. l0 15 20 25 30 5 f? 1 (5 23 7 2 capacitors, the capacitors being connected to and stacked on the varicap capacitors.

Tack vare denna staplade anordning minskas storleken hos resonatom i VCO:n, vilket sparar mycken värdefull ASIC-yta.Thanks to this stacked device, the size of the resonator in the VCO is reduced, which saves a lot of valuable ASIC space.

Eftersom kondensatorema är anslutna till varicap-kondensatorema kortsluts parasitkapacitansen, vilket innebär ett ökat inställningsområde, förbättrade bruspre- standa och sänkt effektförbrukning.Since the capacitors are connected to the varicap capacitors, the parasitic capacitance is short-circuited, which means an increased setting range, improved noise performance and reduced power consumption.

Ett fördelaktigt sätt att utföra ovannämnda varicap-kondensator är att använda en kollektor-basövergång i en bipolär process eller en MOS-struktur, vilket definie- ras i kraven 3 respektive 4.An advantageous way of performing the above-mentioned varicap capacitor is to use a collector-base junction in a bipolar process or a MOS structure, which are fi nied in claims 3 and 4, respectively.

I ett föredraget utförande enligt krav 6 är kondensatom en Metall-Metall- kondensator. Övriga kännetecken hos uppfinningen definieras i de övriga beroende patent- kraven.In a preferred embodiment according to claim 6, the capacitor is a Metal-Metal capacitor. Other features of the invention are defined in the other dependent claims.

Kort figurbeskrivning Föreliggande uppfinning kommer nu att beskrivas mera detaljerat, med hän- visning till ett föredraget utförande av föreliggande uppfinning, endast givet såsom ett exempel, och illustrerat i de bifogade ritningsfigurema, varvid: Fig. 1 visar VCO-funktionen i en PLL; Fig. 2 visar en schematisk bild av parasitkapacitansen mellan en kondensator och en varicap-kondensator i en integrerad VCO; Fig. 3 visar en schematisk bild av staplingsprincipen för kondensatom och vari- cap-kondensatom enligt föreliggande uppfinning; Fig. 4 är ett utförande av en integrerad VCO; och Fig. 5 är en schematisk bild av chip-monterade kondensatorer och varicap-kon- densatorer enligt tidigare känd teknik.Brief Description of the Figures The present invention will now be described in more detail, with reference to a preferred embodiment of the present invention, given by way of example only, and illustrated in the accompanying drawing figures, in which: Fig. 1 shows the VCO function of a PLL; Fig. 2 shows a schematic view of the parasitic capacitance between a capacitor and a varicap capacitor in an integrated VCO; Fig. 3 shows a schematic view of the stacking principle of the capacitor and the variable cap capacitor according to the present invention; Fig. 4 is an embodiment of an integrated VCO; and Fig. 5 is a schematic view of chip-mounted capacitors and varicap capacitors according to the prior art.

Detaljerad beskrivning av utföranden av uppfinningen Det bör betonas att denna uppfinning är besläktad med de under behandling varande ansökningama med titlama ”Dubbelbands-VCO” och ”VCO-omkopplare”, med sökande: Telefonaktiebolaget LM Ericsson, uppfinnare: Magnus Nilsson (Dub- belbands-VCO) Magnus Nilsson, Thomas Mattson (VCO-omkopplare). Dessa an- sökningar, ”Dubbelbands-VCO” resp. ”VCO-omkopplare” infogas härmed i denna ansökan som referenser.Detailed description of embodiments of the invention It should be emphasized that this invention is related to the pending applications entitled "Double-band VCO" and "VCO-switch", with applicants: Telefonaktiebolaget LM Ericsson, inventor: Magnus Nilsson (Double-band VCO) Magnus Nilsson, Thomas Mattson (VCO switch). These applications, "Double-band VCO" resp. "VCO switches" are hereby incorporated by reference into this application.

De utföranden som nu kommer att diskuteras minskar ytan på en chip-monte- rad VCO samtidigt som de förbättrar VCO:ns prestanda.The designs that will now be discussed reduce the surface area of a chip-mounted VCO while improving the VCO's performance.

Fig. 2 visar en Metall-Metall-kondensator 80 som används som en kopplings- kondensator i VCO:ns resonator. Denna Metall-Metall-kondensator kommer nu att betecknas som en M-M-kondensator. M-M-kondensatom 80 innehåller två metall- 15 20 25 30 35 40 övergång 60 mellan dessa elektroder 50, 70. Det bör betonas att varicap-kondensator i denna ansökan definieras som en spänningsstyrd kondensator. Uppfinningens idé är att använda M-M-kondensatom och stapla den ovanpå varicap-kondensatom så som framgår av Fig. 2 resp. 3. På detta sätt placeras kondensatom 80 ovanpå vari- cap-kondensatom 90. vilket betyder att VCO:ns resonator kommer att uppta mindre yta på chipen 110 (underlaget). Inom tidigare känd teknik har M-M-kondensatorn 80 alltid varit placerad bredvid varicap-kondensatom 90 på chipen 110, som framgår av Fig. 5. Skälet för att placera kondensatom 80 och varicap-kondensatom 90 bredvid varandra på chipen 110 (se Fig. 5) är att det normalt inte är tillåtet i en ASIC-process att sätta M-M-kondensatom ovanpå varicap-kondensatom, beroende på den ökade parasitkapacitans 120 som kommer att uppträda mellan M-M-kondesatom 80 och den underliggande varicap-kondensatom 90 (se Fig. 2). På grund av denna parasit- kapacitans 120 kommer en oönskad spänning att ligga över parasitkapacitansen 120, och en oönskad ström (RF -signal) kommer att flyta mellan M-M-kondensatom 80 och varicap-kondensatom 90. Parasitkapacitansen i F ig. 5 kommer att påverka reso- natoms Q-värde på ett skadligt sätt.Fig. 2 shows a metal-metal capacitor 80 used as a coupling capacitor in the resonator of the VCO. This Metal-Metal capacitor will now be referred to as an M-M capacitor. The M-M capacitor 80 contains two metal transitions 60 between these electrodes 50, 70. It should be emphasized that the varicap capacitor is defined in this application as a voltage controlled capacitor. The idea of the invention is to use the M-M capacitor and stack it on top of the varicap capacitor as shown in Fig. 2 resp. 3. In this way, the capacitor 80 is placed on top of the varicap capacitor 90, which means that the resonator of the VCO will take up less space on the chip 110 (the substrate). In the prior art, the MM capacitor 80 has always been located next to the varicap capacitor 90 on the chip 110, as shown in Fig. 5. The reason for placing the capacitor 80 and the varicap capacitor 90 next to each other on the chip 110 (see Fig. 5) is that it is not normally permitted in an ASIC process to place the MM capacitor on top of the varicap capacitor, due to the increased parasitic capacitance 120 that will occur between the MM capacitor 80 and the underlying varicap capacitor 90 (see Fig. 2) . Due to this parasitic capacitance 120, an undesired voltage will be above the parasitic capacitance 120, and an undesired current (RF signal) will mellan surface between the M-M capacitor 80 and the varicap capacitor 90. The parasitic capacitance in Figs. 5 will adversely affect the Q-value of the resonator.

Föreliggande uppfinning enligt F ig. 3 hänför sig emellertid till integrering av en VCO och en resonator på en radio-ASIC-krets. I resonatorn är kopplingskonden- satom 80, d.v.s. M-M-kondensatom, alltid ansluten 100 till varicap-kondensatom 90, vilket medför att parasitkapacitansen 130 kortsluts. Detta betyder att det inte längre är några problem att stapla M-M-kondensatom ovanpå varicap-kondensatom så som framgår av Fig. 3, eftersom parasitkapacitansen 130 inte påverkar resonatorn, d.v.s. ingen ström kommer att flyta genom parasitkapacitansen.The present invention according to Figs. 3, however, relates to the integration of a VCO and a resonator on a radio-ASIC circuit. In the resonator, the coupling capacitor is 80, i.e. The M-M capacitor, always connected 100 to the varicap capacitor 90, which causes the parasitic capacitance 130 to be short-circuited. This means that it is no longer a problem to stack the M-M capacitor on top of the varicap capacitor as shown in Fig. 3, since the parasitic capacitance 130 does not affect the resonator, i.e. no current will flow through the parasitic capacitance.

Genom att stapla kopplingskondensatom 80 på varicap-kondensatom 90 så som visas i F ig. 3, kan ytbehovet för VCO:n minskas med en faktor 2 om man använder extema induktanser. Om induktansema integreras på chipen, kommer VCO:ns ytbehov att minskas med 25 procent. Eftersom kopplingskondensatorns 80 parasitkapacitans 130 försvinner, kan inställningsområdet utökas, och brusprestanda och effektförbrukning förbättras.By stacking the coupling capacitor 80 on the varicap capacitor 90 as shown in Figs. 3, the surface demand of the VCO can be reduced by a factor of 2 if extreme inductances are used. If the inductances are integrated on the chip, the surface demand of the VCO will be reduced by 25 percent. As the parasitic capacitance 130 of the coupling capacitor 80 disappears, the setting range can be expanded, and the noise performance and power consumption can be improved.

Det bör inses att i stället för en pn-övergång skulle vilken anordning som helst med kapacitiva egenskaper kunna användas, d.v.s. en MOS-struktur, etc. Vari- cap-kondensatom skulle till exempel kunna vara en kollektor-basövergång i en bipolär process. De utföranden som beskrivits ovan hänför sig endast till en konden- sator staplad på en varicap-kondensator. Man skulle givetvis kunna tänka sig att flera eller alla koiid* 'isatorer 80 i VCOm l0nor1nalt staplas ovanpå varicap-koiideii- satorema 90.It should be appreciated that instead of a pn junction, any device with capacitive properties could be used, i.e. a MOS structure, etc. The varicap capacitor could, for example, be a collector-base junction in a bipolar process. The embodiments described above relate only to a capacitor stacked on a varicap capacitor. It is, of course, conceivable that several or all of the co-ordinators 80 in the VCO lornornally are stacked on top of the varicap co-ordinators 90.

Fig. 4 visar ett utförande av en VCO i en radio-ASIC. Den nedre delen är den aktiva delen av VCO:n, som upptar bara en liten del av ASIC-kretsens kiselyta. Den 15 20 521 63117 4 övre delen är resonatorn som innehåller induktanser 120, kopplingskondensatorer 80 och 'varicqs-kcndensatorer 90, vilka u ptar en huvuddel av ASIC-kretsens kiselyta.Fig. 4 shows an embodiment of a VCO in a radio ASIC. The lower part is the active part of the VCO, which occupies only a small part of the silicon surface of the ASIC circuit. The upper part is the resonator which contains inductors 120, switching capacitors 80 and varicose capacitors 90, which occupy a major part of the silicon surface of the ASIC circuit.

Induktansema 120 upptar normalt samma yta som kopplingskondensatorema 80 och varicap-kondensatorema 90 tillsammans. Ett sätt att förbättra VCO:ns Q-värde är att placera inuktansema 120 utanför ASIC-kretsen.The inductors 120 normally occupy the same area as the switching capacitors 80 and the varicap capacitors 90 together. One way to improve the Q value of the VCO is to place the inductances 120 outside the ASIC circuit.

När VCO:n 10 utförs enligt F ig. 4 på chipen 110 är kopplingskondensatorema 80 i Fig. 4 staplade på varicap-kondensatorerna 90.When the VCO 10 is performed according to Figs. 4 on the chip 110, the switching capacitors 80 in Fig. 4 are stacked on the varicap capacitors 90.

Den ovan beskrivna staplingsprincipen har prövats med framgång i laborato- riemiljö.The stacking principle described above has been successfully tested in a laboratory environment.

Det bör inses att VCO:n 10 skulle kunna utföras i en godtycklig elektronisk krets. I det föredragna utförande är VCO:n emellertid avsedd att integreras i i en radio-ASIC-krets i en mobil terminal, t.ex. en mobiltelefon eller en mobil dator.It should be appreciated that the VCO 10 could be performed in any electronic circuit. In the preferred embodiment, however, the VCO is intended to be integrated in a radio ASIC circuit in a mobile terminal, e.g. a mobile phone or a mobile computer.

Det skulle inses av en fackman inom området, att föreliggande uppfinning skulle kunna utföras i andra specifika former utan att frångå dess andemening eller huvudsakliga karaktär. De här visade utförandena skall därför i alla avseenden be- traktas såsom illustrerande och inte som begränsande. Uppfinningens omfattning anges av bifogade patentkrav och inte av ovanstående beskrivning, och alla föränd- ringar som ligger inom dess innebörd och ekvivalensområde är avsedda att omfattas av uppfinningen.It would be appreciated by one skilled in the art that the present invention may be practiced in other specific forms without departing from the spirit or principal nature thereof. The embodiments shown here should therefore be considered as illustrative and not restrictive in all respects. The scope of the invention is stated in the appended claims and not in the above description, and all changes that fall within its meaning and area of equivalence are intended to be covered by the invention.

Claims (10)

5 10 20 25 30 35 40 Û! (3137 s' Patentkrav5 10 20 25 30 35 40 Û! (3137 p. Patent claims 1. Integrerad VCO (10) med en resonator innefattande en kondensator (80) och en varicap-kondensator (90), varvid nämnda kondensator (80) är ansluten till och staplad på nämnda varicap-kondensator (90), kännetecknad av att nämnda kondensator (80) är en Metall-Metall-kondensator samt att nämnda integrerade VCO är integrerad i en radio ASIC-krets (110).An integrated VCO (10) having a resonator comprising a capacitor (80) and a varicap capacitor (90), said capacitor (80) being connected to and stacked on said varicap capacitor (90), characterized in that said capacitor (80) is a Metal-Metal capacitor and said integrated VCO is integrated in a radio ASIC circuit (110). 2. Integrerad VCO enligt krav 1, kännetecknad av att nämnda varicap-konden- sator är en diod (90).Integrated VCO according to claim 1, characterized in that said varicap capacitor is a diode (90). 3. Integrerad VCO enligt krav 2, kännetecknad av att nämnda diod är en kol- lektor-basövergång i en bipolär process.Integrated VCO according to claim 2, characterized in that said diode is a collector-base junction in a bipolar process. 4. Integrerad VCO enligt krav 1, kännetecknad av att nämnda varicap-konden- sator är en MOS-struktur.Integrated VCO according to claim 1, characterized in that said varicap capacitor is a MOS structure. 5. Integrerad VCO enligt något av föregående krav, kännetecknad av att nämnda kondensator är en kopplingskondensator (80).Integrated VCO according to any one of the preceding claims, characterized in that said capacitor is a coupling capacitor (80). 6. Integrerad VCO enligt något av föregående krav, kännetecknad av att nämnda kondensator (80) och nämnda varicap-kondensator (90) i nämnda resonator är integrerade på underlaget (110) till en integrerad krets.Integrated VCO according to any one of the preceding claims, characterized in that said capacitor (80) and said varicap capacitor (90) in said resonator are integrated on the substrate (110) of an integrated circuit. 7. Integrerad VCO enligt något av föregående krav, kännetecknad av att den innehåller ett flertal kondesatorer (80) med tillhörande varicap-kondensatorer (90), varvid nämnda kondensatorer är anslutna till och staplade ovanpå nämnda varicap- kondensatorer.Integrated VCO according to any one of the preceding claims, characterized in that it contains a plurality of capacitors (80) with associated varicap capacitors (90), said capacitors being connected to and stacked on top of said varicap capacitors. 8. Radio-ASIC-krets, kännetecknad av att den innefattar en integrerad VCO enligt något av kraven 1-7.Radio-ASIC circuit, characterized in that it comprises an integrated VCO according to any one of claims 1-7. 9. Mobil terminal, kännetecknad av att den innefattar en integrerad VCO och/eller en radio-ASIC-krets enligt något av kraven 1-8.Mobile terminal, characterized in that it comprises an integrated VCO and / or a radio-ASIC circuit according to any one of claims 1-8. 10. Elektronisk anordning, företrädesvis en dator, kännetecknad av att den inne- fattar en integrerad VCO och/eller en radio-ASIC-krets enligt något av kraven l-8.Electronic device, preferably a computer, characterized in that it comprises an integrated VCO and / or a radio-ASIC circuit according to any one of claims 1-8.
SE9903256A 1999-09-13 1999-09-13 Stacked VCO resonator SE521637C2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9903256A SE521637C2 (en) 1999-09-13 1999-09-13 Stacked VCO resonator
AU74647/00A AU7464700A (en) 1999-09-13 2000-09-06 A stacked vco resonator
JP2001524230A JP2003509939A (en) 1999-09-13 2000-09-06 Stacked VCO resonator
PCT/SE2000/001713 WO2001020771A1 (en) 1999-09-13 2000-09-06 A stacked vco resonator
CN00812777.8A CN1373927A (en) 1999-09-13 2000-09-06 Stacked VCO resonator
EP00963198A EP1214779A1 (en) 1999-09-13 2000-09-06 A stacked vco resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9903256A SE521637C2 (en) 1999-09-13 1999-09-13 Stacked VCO resonator

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SE9903256L SE9903256L (en) 2001-03-14
SE521637C2 true SE521637C2 (en) 2003-11-18

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CN (1) CN1373927A (en)
AU (1) AU7464700A (en)
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WO (1) WO2001020771A1 (en)

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US20080191260A1 (en) * 2004-10-05 2008-08-14 Koninklijke Philips Electronics N.V. Semiconductor Device And Use Thereof
EP1889359B1 (en) * 2005-06-08 2013-01-16 The Regents of the University of California Linear variable voltage diode capacitor and adaptive matching networks
CN108574017B (en) * 2017-03-07 2021-08-06 中芯国际集成电路制造(上海)有限公司 Varactor and method of forming the same

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Publication number Priority date Publication date Assignee Title
FR2502864B1 (en) * 1981-03-24 1986-09-05 Asulab Sa INTEGRATED CIRCUIT FOR AN ADJUSTABLE FREQUENCY OSCILLATOR
JPH025465A (en) * 1988-06-24 1990-01-10 Hitachi Ltd Semiconductor device
JPH03283577A (en) * 1990-03-30 1991-12-13 Murata Mfg Co Ltd Semiconductor device

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EP1214779A1 (en) 2002-06-19
SE9903256L (en) 2001-03-14
SE9903256D0 (en) 1999-09-13
WO2001020771A1 (en) 2001-03-22
JP2003509939A (en) 2003-03-11
AU7464700A (en) 2001-04-17
CN1373927A (en) 2002-10-09

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