SE513512C2 - Halvledaranordning med ett flytande kollektorområde - Google Patents

Halvledaranordning med ett flytande kollektorområde

Info

Publication number
SE513512C2
SE513512C2 SE9403722A SE9403722A SE513512C2 SE 513512 C2 SE513512 C2 SE 513512C2 SE 9403722 A SE9403722 A SE 9403722A SE 9403722 A SE9403722 A SE 9403722A SE 513512 C2 SE513512 C2 SE 513512C2
Authority
SE
Sweden
Prior art keywords
region
silicon layer
doped
base region
base
Prior art date
Application number
SE9403722A
Other languages
English (en)
Swedish (sv)
Other versions
SE9403722L (sv
SE9403722D0 (sv
Inventor
Torkel Bengt Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9403722A priority Critical patent/SE513512C2/sv
Publication of SE9403722D0 publication Critical patent/SE9403722D0/xx
Priority to AU38575/95A priority patent/AU3857595A/en
Priority to CA002204136A priority patent/CA2204136A1/en
Priority to PCT/SE1995/001284 priority patent/WO1996013862A1/en
Priority to JP8514502A priority patent/JPH10508155A/ja
Priority to CN95195973A priority patent/CN1088261C/zh
Priority to US08/836,426 priority patent/US5939759A/en
Priority to EP95936829A priority patent/EP0789933A2/de
Publication of SE9403722L publication Critical patent/SE9403722L/
Priority to FI971753A priority patent/FI971753A7/fi
Publication of SE513512C2 publication Critical patent/SE513512C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
SE9403722A 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde SE513512C2 (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde
EP95936829A EP0789933A2 (de) 1994-10-31 1995-10-31 Silizium-auf-isolator-anordnung mit schwebendem kollektor
JP8514502A JPH10508155A (ja) 1994-10-31 1995-10-31 浮動コレクタを有する絶縁材上シリコン半導体装置
CA002204136A CA2204136A1 (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
PCT/SE1995/001284 WO1996013862A1 (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
AU38575/95A AU3857595A (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
CN95195973A CN1088261C (zh) 1994-10-31 1995-10-31 具有浮动集电区的绝缘体上的硅器件
US08/836,426 US5939759A (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
FI971753A FI971753A7 (fi) 1994-10-31 1997-04-24 Piitä sisältävä eristyslaite, jolla on kelluva kollektori

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde

Publications (3)

Publication Number Publication Date
SE9403722D0 SE9403722D0 (sv) 1994-10-31
SE9403722L SE9403722L (sv) 1996-05-01
SE513512C2 true SE513512C2 (sv) 2000-09-25

Family

ID=20395797

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde

Country Status (9)

Country Link
US (1) US5939759A (de)
EP (1) EP0789933A2 (de)
JP (1) JPH10508155A (de)
CN (1) CN1088261C (de)
AU (1) AU3857595A (de)
CA (1) CA2204136A1 (de)
FI (1) FI971753A7 (de)
SE (1) SE513512C2 (de)
WO (1) WO1996013862A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1142026B1 (de) * 1998-12-04 2007-11-14 Infineon Technologies AG Leistungshalbleiterschalter
US7760103B2 (en) * 2001-10-26 2010-07-20 Innovative American Technology, Inc. Multi-stage system for verification of container contents
US8350352B2 (en) * 2009-11-02 2013-01-08 Analog Devices, Inc. Bipolar transistor
US9099489B2 (en) * 2012-07-10 2015-08-04 Freescale Semiconductor Inc. Bipolar transistor with high breakdown voltage
CN108155226A (zh) * 2017-12-22 2018-06-12 杭州士兰微电子股份有限公司 Npn型三极管及其制造方法
CN119342848B (zh) * 2024-10-16 2026-02-10 浙江创芯集成电路有限公司 半导体结构及其形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
JPS6213071A (ja) * 1985-07-10 1987-01-21 Mitsubishi Electric Corp 半導体装置の製造方法
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
JPH0382041A (ja) * 1989-08-24 1991-04-08 Fujitsu Ltd 半導体集積回路の製造方法
BR9007213A (pt) * 1990-01-08 1992-02-18 Harris Corp Estrutura de transistor fina,dieletricamente isolada,residente em ilha,tendo baixa resistencia de coletor
US5621239A (en) * 1990-11-05 1997-04-15 Fujitsu Limited SOI device having a buried layer of reduced resistivity
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
JP3232168B2 (ja) * 1993-07-02 2001-11-26 三菱電機株式会社 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置

Also Published As

Publication number Publication date
SE9403722L (sv) 1996-05-01
CN1088261C (zh) 2002-07-24
EP0789933A2 (de) 1997-08-20
WO1996013862A1 (en) 1996-05-09
CA2204136A1 (en) 1996-05-09
SE9403722D0 (sv) 1994-10-31
CN1165585A (zh) 1997-11-19
JPH10508155A (ja) 1998-08-04
AU3857595A (en) 1996-05-23
US5939759A (en) 1999-08-17
FI971753A0 (fi) 1997-04-24
FI971753A7 (fi) 1997-04-24

Similar Documents

Publication Publication Date Title
GB1263617A (en) Semiconductor devices and methods of making the same
GB1524592A (en) Bipolar type semiconductor devices
GB1442726A (en) Integrated circuit
CA2033780C (en) Thin, dielectrically isolated island resident transistor structure having low collector resistance
CN103187413A (zh) 用于esd的垂直bjt和scr
US3488564A (en) Planar epitaxial resistors
SE513512C2 (sv) Halvledaranordning med ett flytande kollektorområde
EP0247660A2 (de) Halbleiteranordnung mit einem Bipolartransistor und Feldeffekttransistoren
KR920005297A (ko) 반도체집적회로 장치
SE521385C2 (sv) Bipolär transistorstruktur
US5627401A (en) Bipolar transistor operating method with base charge controlled by back gate bias
US3965481A (en) Charge transfer device with J FET isolation and means to drain stray charge
US5744851A (en) Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions
KR910008844A (ko) 반도체 장치
US4069494A (en) Inverter circuit arrangements
JPS5596675A (en) Semiconductor device
GB1482163A (en) Space charge limited transistor
KR910021032A (ko) 바이씨모스 로직 어레이
JP2002118234A (ja) 半導体装置
JPH0334454A (ja) 相補性ｍｏｓ技術でのラツチアツプ感度減少のための回路
JPH0794741A (ja) 半導体装置
JPH03165039A (ja) 縦型バイポーラトランジスタ
SE9600898L (sv) Halvledare innefattande lutande bas-emitter och kollektor- basövergångar och förfarande för att framställa en sådan
GB1173880A (en) Semiconductor Devices
JPS63244684A (ja) 半導体装置

Legal Events

Date Code Title Description
NUG Patent has lapsed